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Results: 1 to 20 of 118

1.

Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator.

Kim Y, Han J, Takenaka M, Takagi S.

Opt Express. 2014 Apr 7;22(7):7458-64. doi: 10.1364/OE.22.007458.

PMID:
24718120
[PubMed - in process]
2.

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

Guo H, Zhang X, Chen H, Zhang P, Liu H, Chang H, Zhao W, Liao Q, Cui Y.

Opt Express. 2013 Sep 9;21(18):21456-65. doi: 10.1364/OE.21.021456.

PMID:
24104020
[PubMed]
3.

Thermally evaporated SiO thin films as a versatile interlayer for plasma-based OLED passivation.

Yun WM, Jang J, Nam S, Kim LH, Seo SJ, Park CE.

ACS Appl Mater Interfaces. 2012 Jun 27;4(6):3247-53. doi: 10.1021/am300600s. Epub 2012 Jun 8.

PMID:
22646486
[PubMed]
4.

Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates.

López G, Ortega PR, Voz C, Martín I, Colina M, Morales AB, Orpella A, Alcubilla R.

Beilstein J Nanotechnol. 2013 Nov 6;4:726-31. doi: 10.3762/bjnano.4.82. eCollection 2013.

PMID:
24367740
[PubMed]
Free PMC Article
5.

Low-plasma and high-temperature PECVD grown silicon-rich SiO(x) film with enhanced carrier tunneling and light emission.

Lin GR, Lin CJ, Lin CT.

Nanotechnology. 2007 Oct 3;18(39):395202. doi: 10.1088/0957-4484/18/39/395202. Epub 2007 Sep 4.

PMID:
21730413
[PubMed]
6.

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer.

He G, Gao J, Chen H, Cui J, Sun Z, Chen X.

ACS Appl Mater Interfaces. 2014 Dec 15. [Epub ahead of print]

PMID:
25471009
[PubMed - as supplied by publisher]
7.

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

Zhao Y, Zhou C, Zhang X, Zhang P, Dou Y, Wang W, Cao X, Wang B, Tang Y, Zhou S.

Nanoscale Res Lett. 2013 Mar 2;8(1):114. doi: 10.1186/1556-276X-8-114.

PMID:
23452508
[PubMed]
Free PMC Article
8.

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

Choi YJ, Lim H, Lee S, Suh S, Kim JR, Jung HS, Park S, Lee JH, Kim SG, Hwang CS, Kim H.

ACS Appl Mater Interfaces. 2014 May 28;6(10):7885-94. doi: 10.1021/am5012172. Epub 2014 Apr 29.

PMID:
24780393
[PubMed - in process]
9.

Surface passivation of efficient nanotextured black silicon solar cells using thermal atomic layer deposition.

Wang WC, Lin CW, Chen HJ, Chang CW, Huang JJ, Yang MJ, Tjahjono B, Huang JJ, Hsu WC, Chen MJ.

ACS Appl Mater Interfaces. 2013 Oct 9;5(19):9752-9. doi: 10.1021/am402889k. Epub 2013 Sep 30.

PMID:
24028609
[PubMed]
10.

Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

Oh BY, Han JW, Seo DS, Kim KY, Baek SH, Jang HS, Kim JH.

J Nanosci Nanotechnol. 2012 Jul;12(7):5330-5.

PMID:
22966566
[PubMed]
11.

Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators.

Kim Y, Takenaka M, Osada T, Hata M, Takagi S.

Sci Rep. 2014 Apr 15;4:4683. doi: 10.1038/srep04683.

PMID:
24732468
[PubMed]
Free PMC Article
12.

Passivation of pigment-grade TiO(2) particles by nanothick atomic layer deposited SiO(2) films.

King DM, Liang X, Burton BB, Kamal Akhtar M, Weimer AW.

Nanotechnology. 2008 Jun 25;19(25):255604. doi: 10.1088/0957-4484/19/25/255604. Epub 2008 May 15.

PMID:
21828656
[PubMed]
13.

Al2O3/TiO2 multilayer passivation layers grown at low temperature for flexible organic devices.

Kwon TS, Moon DY, Moon YK, Kim WS, Park JW.

J Nanosci Nanotechnol. 2012 Apr;12(4):3696-700.

PMID:
22849199
[PubMed]
14.

Surface and interface processes during atomic layer deposition of copper on silicon oxide.

Dai M, Kwon J, Halls MD, Gordon RG, Chabal YJ.

Langmuir. 2010 Mar 16;26(6):3911-7. doi: 10.1021/la903212c.

PMID:
20092316
[PubMed]
16.

Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

Wang F, Zhang X, Wang L, Jiang Y, Wei C, Xu S, Zhao Y.

Phys Chem Chem Phys. 2014 Oct 7;16(37):20202-8. doi: 10.1039/c4cp02212b.

PMID:
25138166
[PubMed - in process]
17.

Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition.

Edy R, Huang X, Guo Y, Zhang J, Shi J.

Nanoscale Res Lett. 2013 Feb 15;8(1):79. doi: 10.1186/1556-276X-8-79.

PMID:
23413804
[PubMed]
Free PMC Article
18.

Impact of ALD grown passivation layers on silicon nitride based integrated optic devices for very-near-infrared wavelengths.

Khanna A, Subramanian AZ, Häyrinen M, Selvaraja S, Verheyen P, Van Thourhout D, Honkanen S, Lipsanen H, Baets R.

Opt Express. 2014 Mar 10;22(5):5684-92. doi: 10.1364/OE.22.005684.

PMID:
24663909
[PubMed - in process]
19.

Ultrathin SiO(2) layers on Si(111): preparation, interface gap states and the influence of passivation.

Stegemann B, Sixtensson D, Lußky T, Schoepke A, Didschuns I, Rech B, Schmidt M.

Nanotechnology. 2008 Oct 22;19(42):424020. doi: 10.1088/0957-4484/19/42/424020. Epub 2008 Sep 25.

PMID:
21832680
[PubMed]
20.

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