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Similar articles for PubMed (Select 24628625)

1.

Direct observation of metal-insulator transition in single-crystalline germanium telluride nanowire memory devices prior to amorphization.

Nukala P, Agarwal R, Qian X, Jang MH, Dhara S, Kumar K, Johnson AT, Li J, Agarwal R.

Nano Lett. 2014;14(4):2201-9. doi: 10.1021/nl5007036. Epub 2014 Mar 19.

PMID:
24628625
2.

Disorder-induced localization in crystalline phase-change materials.

Siegrist T, Jost P, Volker H, Woda M, Merkelbach P, Schlockermann C, Wuttig M.

Nat Mater. 2011 Mar;10(3):202-8. doi: 10.1038/nmat2934. Epub 2011 Jan 9.

PMID:
21217692
3.

Electrical wind force-driven and dislocation-templated amorphization in phase-change nanowires.

Nam SW, Chung HS, Lo YC, Qi L, Li J, Lu Y, Johnson AT, Jung Y, Nukala P, Agarwal R.

Science. 2012 Jun 22;336(6088):1561-6. doi: 10.1126/science.1220119.

4.

Germanium telluride nanowires and nanohelices with memory-switching behavior.

Yu D, Wu J, Gu Q, Park H.

J Am Chem Soc. 2006 Jun 28;128(25):8148-9.

PMID:
16787074
5.

The memristive properties of a single VO2 nanowire with switching controlled by self-heating.

Bae SH, Lee S, Koo H, Lin L, Jo BH, Park C, Wang ZL.

Adv Mater. 2013 Sep 25;25(36):5098-103. doi: 10.1002/adma.201302511. Epub 2013 Aug 2.

PMID:
23913309
6.

A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation.

Zhou X, Dong W, Zhang H, Simpson RE.

Sci Rep. 2015 Jun 11;5:11150. doi: 10.1038/srep11150.

7.

Role of vacancies in metal-insulator transitions of crystalline phase-change materials.

Zhang W, Thiess A, Zalden P, Zeller R, Dederichs PH, Raty JY, Wuttig M, Blügel S, Mazzarello R.

Nat Mater. 2012 Nov;11(11):952-6. doi: 10.1038/nmat3456. Epub 2012 Oct 14.

PMID:
23064498
8.

Dynamic observation of phase transformation behaviors in indium(III) selenide nanowire based phase change memory.

Huang YT, Huang CW, Chen JY, Ting YH, Lu KC, Chueh YL, Wu WW.

ACS Nano. 2014 Sep 23;8(9):9457-62. doi: 10.1021/nn503576x. Epub 2014 Aug 25.

PMID:
25133955
9.

Controlled synthesis and size-dependent polarization domain structure of colloidal germanium telluride nanocrystals.

Polking MJ, Zheng H, Ramesh R, Alivisatos AP.

J Am Chem Soc. 2011 Feb 23;133(7):2044-7. doi: 10.1021/ja108309s. Epub 2011 Jan 31.

PMID:
21280629
10.

Void formation induced electrical switching in phase-change nanowires.

Meister S, Schoen DT, Topinka MA, Minor AM, Cui Y.

Nano Lett. 2008 Dec;8(12):4562-7. doi: 10.1021/nl802808f.

PMID:
19367977
11.

Transient Structures and Possible Limits of Data Recording in Phase-Change Materials.

Hu J, Vanacore GM, Yang Z, Miao X, Zewail AH.

ACS Nano. 2015 Jul 28;9(7):6728-37. doi: 10.1021/acsnano.5b01965. Epub 2015 Jun 2.

PMID:
26035229
12.

Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial.

Liu M, Hwang HY, Tao H, Strikwerda AC, Fan K, Keiser GR, Sternbach AJ, West KG, Kittiwatanakul S, Lu J, Wolf SA, Omenetto FG, Zhang X, Nelson KA, Averitt RD.

Nature. 2012 Jul 19;487(7407):345-8. doi: 10.1038/nature11231.

PMID:
22801506
13.

Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.

Sun Z, Zhou J, Pan Y, Song Z, Mao HK, Ahuja R.

Proc Natl Acad Sci U S A. 2011 Jun 28;108(26):10410-4. doi: 10.1073/pnas.1107464108. Epub 2011 Jun 13.

14.

Single-nanowire raman microprobe studies of doping-, temperature-, and voltage-induced metal-insulator transitions of W(x)V(1-x)O2 nanowires.

Whittaker L, Wu TL, Stabile A, Sambandamurthy G, Banerjee S.

ACS Nano. 2011 Nov 22;5(11):8861-7. doi: 10.1021/nn203542c. Epub 2011 Oct 11.

PMID:
21988709
15.

Minimum voltage for threshold switching in nanoscale phase-change memory.

Yu D, Brittman S, Lee JS, Falk AL, Park H.

Nano Lett. 2008 Oct;8(10):3429-33. doi: 10.1021/nl802261s. Epub 2008 Sep 4.

PMID:
18767829
16.

Core-shell heterostructured phase change nanowire multistate memory.

Jung Y, Lee SH, Jennings AT, Agarwal R.

Nano Lett. 2008 Jul;8(7):2056-62. doi: 10.1021/nl801482z. Epub 2008 Jun 13.

PMID:
18549278
17.

Distortion-triggered loss of long-range order in solids with bonding energy hierarchy.

Kolobov AV, Krbal M, Fons P, Tominaga J, Uruga T.

Nat Chem. 2011 Apr;3(4):311-6. doi: 10.1038/nchem.1007. Epub 2011 Mar 20.

PMID:
21430691
18.

Direct observation of nanoscale Peltier and Joule effects at metal-insulator domain walls in vanadium dioxide nanobeams.

Favaloro T, Suh J, Vermeersch B, Liu K, Gu Y, Chen LQ, Wang KX, Wu J, Shakouri A.

Nano Lett. 2014 May 14;14(5):2394-400. doi: 10.1021/nl500042x. Epub 2014 Apr 17.

PMID:
24735496
19.

Ultrafast characterization of phase-change material crystallization properties in the melt-quenched amorphous phase.

Jeyasingh R, Fong SW, Lee J, Li Z, Chang KW, Mantegazza D, Asheghi M, Goodson KE, Wong HS.

Nano Lett. 2014 Jun 11;14(6):3419-26. doi: 10.1021/nl500940z. Epub 2014 May 7.

PMID:
24798660
20.

Logic computation in phase change materials by threshold and memory switching.

Cassinerio M, Ciocchini N, Ielmini D.

Adv Mater. 2013 Nov 6;25(41):5975-80. doi: 10.1002/adma.201301940. Epub 2013 Aug 15.

PMID:
23946217
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