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Items: 1 to 20 of 143

1.

Sol-gel solution-deposited InGaZnO thin film transistors.

Street RA, Ng TN, Lujan RA, Son I, Smith M, Kim S, Lee T, Moon Y, Cho S.

ACS Appl Mater Interfaces. 2014 Mar 26;6(6):4428-37. doi: 10.1021/am500126b. Epub 2014 Mar 14.

PMID:
24593772
2.

Improved electrical performance and bias stability of solution-processed active bilayer structure of indium zinc oxide based TFT.

Seo JS, Bae BS.

ACS Appl Mater Interfaces. 2014 Sep 10;6(17):15335-43. doi: 10.1021/am5037934. Epub 2014 Aug 20.

PMID:
25116128
3.

Effect of the electrode materials on the drain-bias stress instabilities of In-Ga-Zn-O thin-film transistors.

Bak JY, Yang S, Ryu MK, Ko Park SH, Hwang CS, Yoon SM.

ACS Appl Mater Interfaces. 2012 Oct 24;4(10):5369-74. doi: 10.1021/am301253x. Epub 2012 Sep 26.

PMID:
22974265
4.

Simple method to enhance positive bias stress stability of In-Ga-Zn-O thin-film transistors using a vertically graded oxygen-vacancy active layer.

Park JH, Kim YG, Yoon S, Hong S, Kim HJ.

ACS Appl Mater Interfaces. 2014 Dec 10;6(23):21363-8. doi: 10.1021/am5063212. Epub 2014 Nov 24.

PMID:
25402628
5.

Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping.

Jeong SK, Kim MH, Lee SY, Seo H, Choi DK.

Nanoscale Res Lett. 2014 Nov 18;9(1):619. doi: 10.1186/1556-276X-9-619. eCollection 2014.

6.

Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors.

Yoon S, Tak YJ, Yoon DH, Choi UH, Park JS, Ahn BD, Kim HJ.

ACS Appl Mater Interfaces. 2014 Aug 27;6(16):13496-501. doi: 10.1021/am502571w. Epub 2014 Aug 8.

PMID:
25078328
7.

Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thin-film transistors using hydrogen peroxide.

Kwon JM, Jung J, Rim YS, Kim DL, Kim HJ.

ACS Appl Mater Interfaces. 2014 Mar 12;6(5):3371-7. doi: 10.1021/am4054139. Epub 2014 Feb 24.

PMID:
24503476
8.

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

Lee IK, Lee KH, Lee S, Cho WJ.

ACS Appl Mater Interfaces. 2014 Dec 24;6(24):22680-6. doi: 10.1021/am506805a. Epub 2014 Dec 11.

PMID:
25456792
9.

Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors.

Lee KH, Park JH, Yoo YB, Jang WS, Oh JY, Chae SS, Moon KJ, Myoung JM, Baik HK.

ACS Appl Mater Interfaces. 2013 Apr 10;5(7):2585-92. doi: 10.1021/am3032629. Epub 2013 Mar 19.

PMID:
23461268
10.

Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

Liu HC, Lai YC, Lai CC, Wu BS, Zan HW, Yu P, Chueh YL, Tsai CC.

ACS Appl Mater Interfaces. 2015 Jan 14;7(1):232-40. doi: 10.1021/am5059316. Epub 2014 Dec 26.

PMID:
25485556
11.

Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing.

Park WT, Son I, Park HW, Chung KB, Xu Y, Lee T, Noh YY.

ACS Appl Mater Interfaces. 2015 Jun 24;7(24):13289-94. doi: 10.1021/acsami.5b04374. Epub 2015 Jun 12.

PMID:
26043206
12.

Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature.

Seo JS, Jeon JH, Hwang YH, Park H, Ryu M, Park SH, Bae BS.

Sci Rep. 2013;3:2085. doi: 10.1038/srep02085.

13.

Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

Luo D, Xu H, Zhao M, Li M, Xu M, Zou J, Tao H, Wang L, Peng J.

ACS Appl Mater Interfaces. 2015 Feb 18;7(6):3633-40. doi: 10.1021/am5079682. Epub 2015 Feb 4.

PMID:
25619280
14.

Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors.

Liu X, Liu X, Wang J, Liao C, Xiao X, Guo S, Jiang C, Fan Z, Wang T, Chen X, Lu W, Hu W, Liao L.

Adv Mater. 2014 Nov 19;26(43):7399-404. doi: 10.1002/adma.201401732. Epub 2014 Sep 18.

PMID:
25236580
15.

High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.

Banger KK, Peterson RL, Mori K, Yamashita Y, Leedham T, Sirringhaus H.

Chem Mater. 2014 Jan 28;26(2):1195-1203. Epub 2013 Dec 22.

16.

Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric.

Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Baik HK.

ACS Appl Mater Interfaces. 2013 Jan 23;5(2):410-7. doi: 10.1021/am3022625. Epub 2013 Jan 8.

PMID:
23267443
17.
18.

Performance Enhancement of ZITO Thin-Film Transistors via Graphene Bridge Layer by Sol-Gel Combustion Process.

Zhang J, Dong P, Gao Y, Sheng C, Li X.

ACS Appl Mater Interfaces. 2015 Nov 4;7(43):24103-9. doi: 10.1021/acsami.5b07148. Epub 2015 Oct 26.

PMID:
26473579
19.

Improvement in the Electrical Performance of Ge-Doped InZnO Thin-Film Transistor.

Im YJ, Kim SJ, Shin JH, Ha SS, Park CH, Yi M.

J Nanosci Nanotechnol. 2015 Oct;15(10):7537-41.

PMID:
26726366
20.

Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors.

Swisher SL, Volkman SK, Subramanian V.

ACS Appl Mater Interfaces. 2015 May 20;7(19):10069-75. doi: 10.1021/acsami.5b00893. Epub 2015 May 6.

PMID:
25915094
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