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Items: 1 to 20 of 164

1.

Single InAs nanowire room-temperature near-infrared photodetectors.

Miao J, Hu W, Guo N, Lu Z, Zou X, Liao L, Shi S, Chen P, Fan Z, Ho JC, Li TX, Chen XS, Lu W.

ACS Nano. 2014 Apr 22;8(4):3628-35. doi: 10.1021/nn500201g. Epub 2014 Mar 7.

PMID:
24592971
2.

High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.

Miao J, Hu W, Guo N, Lu Z, Liu X, Liao L, Chen P, Jiang T, Wu S, Ho JC, Wang L, Chen X, Lu W.

Small. 2015 Feb 25;11(8):936-42. doi: 10.1002/smll.201402312. Epub 2014 Oct 31.

PMID:
25363206
3.

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire.

Kuo CH, Wu JM, Lin SJ, Chang WC.

Nanoscale Res Lett. 2013 Jul 18;8(1):327. doi: 10.1186/1556-276X-8-327.

4.

In situ integration of squaraine-nanowire-array-based Schottky-type photodetectors with enhanced switching performance.

Zhang Y, Deng W, Zhang X, Zhang X, Zhang X, Xing Y, Jie J.

ACS Appl Mater Interfaces. 2013 Dec 11;5(23):12288-94. doi: 10.1021/am402087v. Epub 2013 Aug 9.

PMID:
23889229
5.

Formation mechanism and optical properties of InAs quantum dots on the surface of GaAs nanowires.

Yan X, Zhang X, Ren X, Lv X, Li J, Wang Q, Cai S, Huang Y.

Nano Lett. 2012 Apr 11;12(4):1851-6. doi: 10.1021/nl204204f. Epub 2012 Mar 26.

PMID:
22439825
6.

Room temperature GaAsSb single nanowire infrared photodetectors.

Li Z, Yuan X, Fu L, Peng K, Wang F, Fu X, Caroff P, White TP, Hoe Tan H, Jagadish C.

Nanotechnology. 2015 Nov 6;26(44):445202. doi: 10.1088/0957-4484/26/44/445202. Epub 2015 Oct 9.

PMID:
26451616
7.

Ultrathin InAs nanowire growth by spontaneous Au nanoparticle spreading on indium-rich surfaces.

Jung K, Mohseni PK, Li X.

Nanoscale. 2014 Dec 21;6(24):15293-300. doi: 10.1039/c4nr04670f. Epub 2014 Nov 10.

PMID:
25383665
8.

Si nanowire metal-insulator-semiconductor photodetectors as efficient light harvesters.

Bae J, Kim H, Zhang XM, Dang CH, Zhang Y, Choi YJ, Nurmikko A, Wang ZL.

Nanotechnology. 2010 Mar 5;21(9):095502. doi: 10.1088/0957-4484/21/9/095502. Epub 2010 Feb 4.

PMID:
20130349
9.

Hot-electron injection in Au nanorod-ZnO nanowire hybrid device for near-infrared photodetection.

Pescaglini A, Martín A, Cammi D, Juska G, Ronning C, Pelucchi E, Iacopino D.

Nano Lett. 2014 Nov 12;14(11):6202-9. doi: 10.1021/nl5024854. Epub 2014 Oct 16.

PMID:
25313827
10.

Single nanowire-based UV photodetectors for fast switching.

Ul Hasan K, Alvi NH, Lu J, Nur O, Willander M.

Nanoscale Res Lett. 2011 Apr 19;6(1):348. doi: 10.1186/1556-276X-6-348.

11.

Photoconductive enhancement of single ZnO nanowire through localized Schottky effects.

Chen MW, Chen CY, Lien DH, Ding Y, He JH.

Opt Express. 2010 Jul 5;18(14):14836-41. doi: 10.1364/OE.18.014836.

PMID:
20639970
12.

Infrared photodetectors in heterostructure nanowires.

Pettersson H, Trägårdh J, Persson AI, Landin L, Hessman D, Samuelson L.

Nano Lett. 2006 Feb;6(2):229-32.

PMID:
16464040
13.

GaAs/AlGaAs nanowire photodetector.

Dai X, Zhang S, Wang Z, Adamo G, Liu H, Huang Y, Couteau C, Soci C.

Nano Lett. 2014 May 14;14(5):2688-93. doi: 10.1021/nl5006004. Epub 2014 Apr 3.

PMID:
24678794
14.

Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors.

Cao Y, Cai K, Hu P, Zhao L, Yan T, Luo W, Zhang X, Wu X, Wang K, Zheng H.

Sci Rep. 2015 Jan 30;5:8130. doi: 10.1038/srep08130.

15.

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Jiang X, Xiong Q, Nam S, Qian F, Li Y, Lieber CM.

Nano Lett. 2007 Oct;7(10):3214-8. Epub 2007 Sep 15.

PMID:
17867718
16.

High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts.

Zou R, Zhang Z, Hu J, Sang L, Koide Y, Liao M.

Nanotechnology. 2013 Dec 13;24(49):495701. doi: 10.1088/0957-4484/24/49/495701. Epub 2013 Nov 14.

PMID:
24231924
17.

High electron mobility InAs nanowire field-effect transistors.

Dayeh SA, Aplin DP, Zhou X, Yu PK, Yu ET, Wang D.

Small. 2007 Feb;3(2):326-32.

PMID:
17199246
18.

Formation and characterization of NixInAs/InAs nanowire heterostructures by solid source reaction.

Chueh YL, Ford AC, Ho JC, Jacobson ZA, Fan Z, Chen CY, Chou LJ, Javey A.

Nano Lett. 2008 Dec;8(12):4528-33. doi: 10.1021/nl802681x.

PMID:
19367855
19.

Diameter-dependent internal gain in ohmic Ge nanowire photodetectors.

Kim CJ, Lee HS, Cho YJ, Kang K, Jo MH.

Nano Lett. 2010 Jun 9;10(6):2043-8. doi: 10.1021/nl100136b.

PMID:
20420371
20.

High-performance hybrid phenyl-C61-butyric acid methyl ester/Cd(3)P(2) nanowire ultraviolet-visible-near infrared photodetectors.

Chen G, Liang B, Liu X, Liu Z, Yu G, Xie X, Luo T, Chen D, Zhu M, Shen G, Fan Z.

ACS Nano. 2014 Jan 28;8(1):787-96. doi: 10.1021/nn405442z. Epub 2013 Dec 31.

PMID:
24364536
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