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Results: 1 to 20 of 113

1.

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

Lin BC, Chen KJ, Wang CH, Chiu CH, Lan YP, Lin CC, Lee PT, Shih MH, Kuo YK, Kuo HC.

Opt Express. 2014 Jan 13;22(1):463-9. doi: 10.1364/OE.22.000463.

PMID:
24515006
[PubMed - in process]
2.

Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers.

Zhang YY, Fan GH, Yin YA, Yao GR.

Opt Express. 2012 Jan 2;20(1):A133-40.

PMID:
22379673
[PubMed - indexed for MEDLINE]
3.

Advantages of blue InGaN light-emitting diodes with AlGaN barriers.

Chang JY, Tsai MC, Kuo YK.

Opt Lett. 2010 May 1;35(9):1368-70. doi: 10.1364/OL.35.001368.

PMID:
20436572
[PubMed]
4.

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.

Zhang ZH, Ju Z, Liu W, Tan ST, Ji Y, Kyaw Z, Zhang X, Hasanov N, Sun XW, Demir HV.

Opt Lett. 2014 Apr 15;39(8):2483-6. doi: 10.1364/OL.39.002483.

PMID:
24979024
[PubMed - in process]
5.

Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes.

Yu CT, Lai WC, Yen CH, Chang SJ.

Opt Express. 2014 May 5;22 Suppl 3:A663-70. doi: 10.1364/OE.22.00A663.

PMID:
24922374
[PubMed - in process]
6.
7.

Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers.

Chang JY, Chang YA, Wang TH, Chen FM, Liou BT, Kuo YK.

Opt Lett. 2014 Feb 1;39(3):497-500. doi: 10.1364/OL.39.000497.

PMID:
24487849
[PubMed - in process]
8.

Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer.

Yan QR, Zhang Y, Li ST, Yan QA, Shi PP, Niu QL, He M, Li GP, Li JR.

Opt Lett. 2012 May 1;37(9):1556-8. doi: 10.1364/OL.37.001556.

PMID:
22555736
[PubMed]
9.

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

Nguyen HP, Cui K, Zhang S, Djavid M, Korinek A, Botton GA, Mi Z.

Nano Lett. 2012 Mar 14;12(3):1317-23. doi: 10.1021/nl203860b. Epub 2012 Feb 2.

PMID:
22283508
[PubMed - indexed for MEDLINE]
10.

Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes.

Ji X, Wei T, Yang F, Lu H, Wei X, Ma P, Yi X, Wang J, Zeng Y, Wang G, Li J.

Opt Express. 2014 May 5;22 Suppl 3:A1001-8. doi: 10.1364/OE.22.0A1001.

PMID:
24922364
[PubMed - in process]
11.

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes.

Zhang ZH, Liu W, Tan ST, Ju Z, Ji Y, Kyaw Z, Zhang X, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 May 5;22 Suppl 3:A779-89. doi: 10.1364/OE.22.00A779.

PMID:
24922385
[PubMed - in process]
12.

Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.

Wei T, Ji X, Wu K, Zheng H, Du C, Chen Y, Yan Q, Zhao L, Zhou Z, Wang J, Li J.

Opt Lett. 2014 Jan 15;39(2):379-82. doi: 10.1364/OL.39.000379.

PMID:
24562151
[PubMed - in process]
13.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

Lv W, Wang L, Wang J, Hao Z, Luo Y.

Nanoscale Res Lett. 2012 Nov 7;7(1):617. doi: 10.1186/1556-276X-7-617.

PMID:
23134721
[PubMed]
Free PMC Article
14.

Effect of current spreading on the efficiency droop of InGaN light-emitting diodes.

Ryu HY, Shim JI.

Opt Express. 2011 Feb 14;19(4):2886-94. doi: 10.1364/OE.19.002886.

PMID:
21369110
[PubMed]
15.

InGaN light emitting diodes with a laser-treated tapered GaN structure.

Huang WC, Lin CF, Hsieh TH, Chen SH, Lin MS, Chen KT, Lin CM, Chen SH, Han P.

Opt Express. 2011 Sep 12;19 Suppl 5:A1126-34. doi: 10.1364/OE.19.0A1126.

PMID:
21935255
[PubMed]
16.

The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes

Nakamura S.

Science. 1998 Aug 14;281(5379):955-61.

PMID:
9703504
[PubMed - as supplied by publisher]
17.

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.

Lu T, Li S, Zhang K, Liu C, Yin Y, Wu L, Wang H, Yang X, Xiao G, Zhou Y.

Opt Express. 2011 Sep 12;19(19):18319-23. doi: 10.1364/OE.19.018319.

PMID:
21935200
[PubMed]
18.

Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon.

Nguyen HP, Djavid M, Cui K, Mi Z.

Nanotechnology. 2012 May 17;23(19):194012. doi: 10.1088/0957-4484/23/19/194012. Epub 2012 Apr 27.

PMID:
22539212
[PubMed]
19.

Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes.

Chang JY, Kuo YK.

Opt Lett. 2012 May 1;37(9):1574-6. doi: 10.1364/OL.37.001574.

PMID:
22555742
[PubMed]
20.

Photoluminescence dependence of InGaN/GaN QW on embedded AlGaN delta-layer.

Park J, Lee J, Park S.

Opt Express. 2007 May 14;15(10):6096-101.

PMID:
19546914
[PubMed]

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