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Results: 1 to 20 of 126

1.

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2.

Zhang Y, Chang TR, Zhou B, Cui YT, Yan H, Liu Z, Schmitt F, Lee J, Moore R, Chen Y, Lin H, Jeng HT, Mo SK, Hussain Z, Bansil A, Shen ZX.

Nat Nanotechnol. 2014 Feb;9(2):111-5. doi: 10.1038/nnano.2013.277. Epub 2013 Dec 22.

PMID:
24362235
[PubMed - in process]
2.

CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors.

Xia J, Huang X, Liu LZ, Wang M, Wang L, Huang B, Zhu DD, Li JJ, Gu CZ, Meng XM.

Nanoscale. 2014 Jul 10;6(15):8949-55. doi: 10.1039/c4nr02311k.

PMID:
24965908
[PubMed - in process]
3.

MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field.

Lu N, Guo H, Li L, Dai J, Wang L, Mei WN, Wu X, Zeng XC.

Nanoscale. 2014 Mar 7;6(5):2879-86. doi: 10.1039/c3nr06072a. Epub 2014 Jan 29.

PMID:
24473269
[PubMed - in process]
4.

The Study of Spin-Valley Coupling in Atomically Thin Group VI Transition Metal Dichalcogenides.

Zhu B, Zeng H, Dai J, Cui X.

Adv Mater. 2014 Apr 6. doi: 10.1002/adma.201305367. [Epub ahead of print]

PMID:
24706490
[PubMed - as supplied by publisher]
5.

Chemical vapor deposition growth of crystalline monolayer MoSe2.

Wang X, Gong Y, Shi G, Chow WL, Keyshar K, Ye G, Vajtai R, Lou J, Liu Z, Ringe E, Tay BK, Ajayan PM.

ACS Nano. 2014 May 27;8(5):5125-31. doi: 10.1021/nn501175k. Epub 2014 Apr 8.

PMID:
24680389
[PubMed - in process]
6.

2-dimensional transition metal dichalcogenides with tunable direct band gaps: MoS₂(₁-x) Se₂x monolayers.

Mann J, Ma Q, Odenthal PM, Isarraraz M, Le D, Preciado E, Barroso D, Yamaguchi K, von Son Palacio G, Nguyen A, Tran T, Wurch M, Nguyen A, Klee V, Bobek S, Sun D, Heinz TF, Rahman TS, Kawakami R, Bartels L.

Adv Mater. 2014 Mar 5;26(9):1399-404. doi: 10.1002/adma.201304389. Epub 2013 Dec 12.

PMID:
24339159
[PubMed - in process]
7.

Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.

Tongay S, Zhou J, Ataca C, Lo K, Matthews TS, Li J, Grossman JC, Wu J.

Nano Lett. 2012 Nov 14;12(11):5576-80. doi: 10.1021/nl302584w. Epub 2012 Oct 29.

PMID:
23098085
[PubMed]
8.

Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates.

Lu X, Utama MI, Lin J, Gong X, Zhang J, Zhao Y, Pantelides ST, Wang J, Dong Z, Liu Z, Zhou W, Xiong Q.

Nano Lett. 2014 May 14;14(5):2419-25. doi: 10.1021/nl5000906. Epub 2014 Apr 2.

PMID:
24678857
[PubMed - in process]
9.

Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2.

Desai SB, Seol G, Kang JS, Fang H, Battaglia C, Kapadia R, Ager JW, Guo J, Javey A.

Nano Lett. 2014 Jul 7. [Epub ahead of print]

PMID:
24988370
[PubMed - as supplied by publisher]
10.

Extraordinary room-temperature photoluminescence in triangular WS2 monolayers.

Gutiérrez HR, Perea-López N, Elías AL, Berkdemir A, Wang B, Lv R, López-Urías F, Crespi VH, Terrones H, Terrones M.

Nano Lett. 2013 Aug 14;13(8):3447-54. doi: 10.1021/nl3026357. Epub 2012 Dec 14.

PMID:
23194096
[PubMed]
11.

Electronic structure of a quasi-freestanding MoS₂ monolayer.

Eknapakul T, King PD, Asakawa M, Buaphet P, He RH, Mo SK, Takagi H, Shen KM, Baumberger F, Sasagawa T, Jungthawan S, Meevasana W.

Nano Lett. 2014 Mar 12;14(3):1312-6. doi: 10.1021/nl4042824. Epub 2014 Feb 24.

PMID:
24552197
[PubMed - in process]
12.

Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains.

Johari P, Shenoy VB.

ACS Nano. 2012 Jun 26;6(6):5449-56. doi: 10.1021/nn301320r. Epub 2012 May 31.

PMID:
22591011
[PubMed - indexed for MEDLINE]
13.

Indirect to direct band gap transition in ultra-thin silicon films.

Lin L, Li Z, Feng J, Zhang Z.

Phys Chem Chem Phys. 2013 Apr 28;15(16):6063-7. doi: 10.1039/c3cp50429h. Epub 2013 Mar 15.

PMID:
23493906
[PubMed - indexed for MEDLINE]
14.

Molecular beam epitaxial growth of topological insulators.

Chen X, Ma XC, He K, Jia JF, Xue QK.

Adv Mater. 2011 Mar 4;23(9):1162-5. doi: 10.1002/adma.201003855. Review.

PMID:
21360770
[PubMed - indexed for MEDLINE]
15.

Vapor-solid growth of high optical quality MoS₂ monolayers with near-unity valley polarization.

Wu S, Huang C, Aivazian G, Ross JS, Cobden DH, Xu X.

ACS Nano. 2013 Mar 26;7(3):2768-72. doi: 10.1021/nn4002038. Epub 2013 Mar 1.

PMID:
23427810
[PubMed]
16.

A topological Dirac insulator in a quantum spin Hall phase.

Hsieh D, Qian D, Wray L, Xia Y, Hor YS, Cava RJ, Hasan MZ.

Nature. 2008 Apr 24;452(7190):970-4. doi: 10.1038/nature06843.

PMID:
18432240
[PubMed]
17.

Atomically thin MoS₂: a new direct-gap semiconductor.

Mak KF, Lee C, Hone J, Shan J, Heinz TF.

Phys Rev Lett. 2010 Sep 24;105(13):136805. Epub 2010 Sep 24.

PMID:
21230799
[PubMed]
18.

Two dimensional materials beyond MoS2: noble-transition-metal dichalcogenides.

Miró P, Ghorbani-Asl M, Heine T.

Angew Chem Int Ed Engl. 2014 Mar 10;53(11):3015-8. doi: 10.1002/anie.201309280. Epub 2014 Feb 19.

PMID:
24554594
[PubMed - in process]
19.

Bandgap engineering of strained monolayer and bilayer MoS2.

Conley HJ, Wang B, Ziegler JI, Haglund RF Jr, Pantelides ST, Bolotin KI.

Nano Lett. 2013 Aug 14;13(8):3626-30. doi: 10.1021/nl4014748. Epub 2013 Jul 9.

PMID:
23819588
[PubMed]
20.

Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys.

Chen Y, Xi J, Dumcenco DO, Liu Z, Suenaga K, Wang D, Shuai Z, Huang YS, Xie L.

ACS Nano. 2013 May 28;7(5):4610-6. doi: 10.1021/nn401420h. Epub 2013 Apr 25.

PMID:
23600688
[PubMed]

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