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Results: 1 to 20 of 102

1.

Growth of straight one-dimensional Ge/ZnSe heterojunctions with atomically sharp interfaces by catalytic residue controls.

Kang K, Heo H, Lee D, Hwang I, Jo MH.

Nanotechnology. 2014 Jan 10;25(1):014010. doi: 10.1088/0957-4484/25/1/014010. Epub 2013 Dec 11.

PMID:
24334567
[PubMed]
2.

Nanochannel-directed growth of multi-segment nanowire heterojunctions of metallic Au(1-x)Ge(x) and semiconducting Ge.

Li X, Meng G, Qin S, Xu Q, Chu Z, Zhu X, Kong M, Li AP.

ACS Nano. 2012 Jan 24;6(1):831-6. doi: 10.1021/nn2043466. Epub 2011 Dec 29.

PMID:
22195681
[PubMed - indexed for MEDLINE]
3.

Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires.

Vincent L, Boukhicha R, Cherkashin N, Reboh S, Patriarche G, Renard C, Yam V, Fossard F, Bouchier D.

Nanotechnology. 2012 Oct 5;23(39):395701. doi: 10.1088/0957-4484/23/39/395701. Epub 2012 Sep 7.

PMID:
22962281
[PubMed]
4.

Formation of compositionally abrupt axial heterojunctions in silicon-germanium nanowires.

Wen CY, Reuter MC, Bruley J, Tersoff J, Kodambaka S, Stach EA, Ross FM.

Science. 2009 Nov 27;326(5957):1247-50. doi: 10.1126/science.1178606.

PMID:
19965471
[PubMed]
Free Article
5.

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

Dionízio Moreira M, Venezuela P, Miwa RH.

Nanotechnology. 2010 Jul 16;21(28):285204. doi: 10.1088/0957-4484/21/28/285204. Epub 2010 Jun 18.

PMID:
20562482
[PubMed]
6.

Germanium nanowires with 3-nm-diameter prepared by low temperature vapour-liquid-solid chemical vapour deposition.

Simanullang M, Usami K, Kodera T, Uchida K, Oda S.

J Nanosci Nanotechnol. 2011 Sep;11(9):8163-8.

PMID:
22097548
[PubMed]
7.

Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors.

Huang C, Wu S, Sanchez AM, Peters JJ, Beanland R, Ross JS, Rivera P, Yao W, Cobden DH, Xu X.

Nat Mater. 2014 Aug 24. doi: 10.1038/nmat4064. [Epub ahead of print]

PMID:
25150560
[PubMed - as supplied by publisher]
8.

Large-scale, solution-phase growth of semiconductor nanocrystals into ultralong one-dimensional arrays and study of their electrical properties.

Ma Y, Xue M, Shi J, Tan Y.

Nanoscale. 2014 Jun 21;6(12):6828-36. doi: 10.1039/c4nr00163j.

PMID:
24827004
[PubMed - in process]
9.

Controlling the growth of Si/Ge nanowires and heterojunctions using silver-gold alloy catalysts.

Chou YC, Wen CY, Reuter MC, Su D, Stach EA, Ross FM.

ACS Nano. 2012 Jul 24;6(7):6407-15. doi: 10.1021/nn301978x. Epub 2012 Jul 2.

PMID:
22708581
[PubMed]
10.

Solution-liquid-solid (SLS) growth of ZnSe-ZnTe quantum wires having axial heterojunctions.

Dong A, Wang F, Daulton TL, Buhro WE.

Nano Lett. 2007 May;7(5):1308-13. Epub 2007 Mar 28.

PMID:
17388642
[PubMed]
11.

Formation of planar arrays of one-dimensional p-n heterojunctions using surface-directed growth of nanowires and nanowalls.

Nikoobakht B, Herzing A.

ACS Nano. 2010 Oct 26;4(10):5877-86. doi: 10.1021/nn1019972.

PMID:
20843070
[PubMed]
12.

Tunable catalytic alloying eliminates stacking faults in compound semiconductor nanowires.

Heo H, Kang K, Lee D, Jin LH, Back HJ, Hwang I, Kim M, Lee HS, Lee BJ, Yi GC, Cho YH, Jo MH.

Nano Lett. 2012 Feb 8;12(2):855-60. doi: 10.1021/nl203900q. Epub 2012 Jan 26.

PMID:
22268369
[PubMed - indexed for MEDLINE]
13.

Experimental determination of the absorption cross-section and molar extinction coefficient of CdSe and CdTe nanowires.

Protasenko V, Bacinello D, Kuno M.

J Phys Chem B. 2006 Dec 21;110(50):25322-31.

PMID:
17165978
[PubMed - indexed for MEDLINE]
14.

ZnSe nanowire/Si p-n heterojunctions: device construction and optoelectronic applications.

Zhang X, Zhang X, Wang L, Wu Y, Wang Y, Gao P, Han Y, Jie J.

Nanotechnology. 2013 Oct 4;24(39):395201. doi: 10.1088/0957-4484/24/39/395201. Epub 2013 Sep 6.

PMID:
24013310
[PubMed]
15.

Atomic scale alignment of copper-germanide contacts for ge nanowire metal oxide field effect transistors.

Burchhart T, Lugstein A, Hyun YJ, Hochleitner G, Bertagnolli E.

Nano Lett. 2009 Nov;9(11):3739-42. doi: 10.1021/nl9019243.

PMID:
19691284
[PubMed]
16.

In(x)Ga(₁-x)As nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics.

Shin JC, Kim KH, Yu KJ, Hu H, Yin L, Ning CZ, Rogers JA, Zuo JM, Li X.

Nano Lett. 2011 Nov 9;11(11):4831-8. doi: 10.1021/nl202676b. Epub 2011 Oct 12.

PMID:
21967406
[PubMed - indexed for MEDLINE]
17.

Vertical nanowire heterojunction devices based on a clean Si/Ge interface.

Chen L, Fung WY, Lu W.

Nano Lett. 2013;13(11):5521-7. doi: 10.1021/nl403112a. Epub 2013 Oct 21.

PMID:
24134685
[PubMed - indexed for MEDLINE]
18.

Direct observation of a noncatalytic growth regime for GaAs nanowires.

Rudolph D, Hertenberger S, Bolte S, Paosangthong W, Spirkoska D, Döblinger M, Bichler M, Finley JJ, Abstreiter G, Koblmüller G.

Nano Lett. 2011 Sep 14;11(9):3848-54. doi: 10.1021/nl2019382. Epub 2011 Aug 15.

PMID:
21823601
[PubMed]
19.

Growth of axial SiGe heterostructures in nanowires using pulsed laser deposition.

Eisenhawer B, Sivakov V, Berger A, Christiansen S.

Nanotechnology. 2011 Jul 29;22(30):305604. doi: 10.1088/0957-4484/22/30/305604. Epub 2011 Jun 27.

PMID:
21705828
[PubMed]
20.

Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection.

Wei W, Bao XY, Soci C, Ding Y, Wang ZL, Wang D.

Nano Lett. 2009 Aug;9(8):2926-34. doi: 10.1021/nl901270n.

PMID:
19624100
[PubMed]

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