Similar articles for PMID: 24326774

Year	Number of Results
2002	1
2005	2
2006	1
2007	2
2008	8
2009	16
2010	13
2011	17
2012	11
2013	13
2014	6
2015	6
2016	3
2017	9
2018	4
2019	3
2020	1
2021	10
2022	12
2023	8
2024	0

1

Monolayer contact doping of silicon surfaces and nanowires using organophosphorus compounds.

Hazut O, Agarwala A, Subramani T, Waichman S, Yerushalmi R. Hazut O, et al. J Vis Exp. 2013 Dec 2;(82):50770. doi: 10.3791/50770. J Vis Exp. 2013. PMID: 24326774 Free PMC article.

2

Contact doping of silicon wafers and nanostructures with phosphine oxide monolayers.

Hazut O, Agarwala A, Amit I, Subramani T, Zaidiner S, Rosenwaks Y, Yerushalmi R. Hazut O, et al. ACS Nano. 2012 Nov 27;6(11):10311-8. doi: 10.1021/nn304199w. Epub 2012 Oct 29. ACS Nano. 2012. PMID: 23083376

3

Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size.

Lee SH, Lee TI, Lee SJ, Lee SM, Yun I, Myoung JM. Lee SH, et al. ACS Appl Mater Interfaces. 2015 Jan 14;7(1):929-34. doi: 10.1021/am507478q. Epub 2015 Jan 2. ACS Appl Mater Interfaces. 2015. PMID: 25526518

4

Highly doped silicon nanowires by monolayer doping.

Veerbeek J, Ye L, Vijselaar W, Kudernac T, van der Wiel WG, Huskens J. Veerbeek J, et al. Nanoscale. 2017 Feb 23;9(8):2836-2844. doi: 10.1039/c6nr07623h. Nanoscale. 2017. PMID: 28169380

5

Diameter-dependent dopant location in silicon and germanium nanowires.

Xie P, Hu Y, Fang Y, Huang J, Lieber CM. Xie P, et al. Proc Natl Acad Sci U S A. 2009 Sep 8;106(36):15254-8. doi: 10.1073/pnas.0906943106. Epub 2009 Aug 24. Proc Natl Acad Sci U S A. 2009. PMID: 19706402 Free PMC article.

6

Monolayer Contact Doping from a Silicon Oxide Source Substrate.

Ye L, González-Campo A, Kudernac T, Núñez R, de Jong M, van der Wiel WG, Huskens J. Ye L, et al. Langmuir. 2017 Apr 18;33(15):3635-3638. doi: 10.1021/acs.langmuir.7b00157. Epub 2017 Apr 3. Langmuir. 2017. PMID: 28351137 Free PMC article.

7

Direct measurement of individual deep traps in single silicon nanowires.

Koren E, Elias G, Boag A, Hemesath ER, Lauhon LJ, Rosenwaks Y. Koren E, et al. Nano Lett. 2011 Jun 8;11(6):2499-502. doi: 10.1021/nl201019b. Epub 2011 May 17. Nano Lett. 2011. PMID: 21591656

8

Biosensor based on a silicon nanowire field-effect transistor functionalized by gold nanoparticles for the highly sensitive determination of prostate specific antigen.

Presnova G, Presnov D, Krupenin V, Grigorenko V, Trifonov A, Andreeva I, Ignatenko O, Egorov A, Rubtsova M. Presnova G, et al. Biosens Bioelectron. 2017 Feb 15;88:283-289. doi: 10.1016/j.bios.2016.08.054. Epub 2016 Aug 18. Biosens Bioelectron. 2017. PMID: 27567265

9

Formation of single tiers of bridging silicon nanowires for transistor applications using vapor-liquid-solid growth from short silicon-on-insulator sidewalls.

Nayfeh OM, Antoniadis DA, Boles S, Ho C, Thompson CV. Nayfeh OM, et al. Small. 2009 Nov;5(21):2440-4. doi: 10.1002/smll.200900855. Small. 2009. PMID: 19642093

10

Measurement of active dopant distribution and diffusion in individual silicon nanowires.

Koren E, Berkovitch N, Rosenwaks Y. Koren E, et al. Nano Lett. 2010 Apr 14;10(4):1163-7. doi: 10.1021/nl9033158. Nano Lett. 2010. PMID: 20196550

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