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Items: 1 to 20 of 263

1.

Fabrication of solution-processed InSnZnO/ZrO2 thin film transistors.

Hwang SM, Lee SM, Choi JH, Lim JH, Joo J.

J Nanosci Nanotechnol. 2013 Nov;13(11):7774-8.

PMID:
24245332
2.
3.

Transparent high-performance thin film transistors from solution-processed SnO2 /ZrO2 gel-like precursors.

Jang J, Kitsomboonloha R, Swisher SL, Park ES, Kang H, Subramanian V.

Adv Mater. 2013 Feb 20;25(7):1042-7. doi: 10.1002/adma.201202997. Epub 2012 Nov 14.

PMID:
23161491
4.

Flexible thin-film transistors on plastic substrate at room temperature.

Han D, Wang W, Cai J, Wang L, Ren Y, Wang Y, Zhang S.

J Nanosci Nanotechnol. 2013 Jul;13(7):5154-7.

PMID:
23901545
5.

Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.

Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Lee HW, Han SW, Baik HK.

ACS Appl Mater Interfaces. 2013 Aug 28;5(16):8067-75. doi: 10.1021/am402153g. Epub 2013 Aug 8.

PMID:
23883390
6.

Fully transparent thin-film transistor devices based on SnO2 nanowires.

Dattoli EN, Wan Q, Guo W, Chen Y, Pan X, Lu W.

Nano Lett. 2007 Aug;7(8):2463-9. Epub 2007 Jun 27.

PMID:
17595151
7.

Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

Lim C, Oh JY, Koo JB, Park CW, Jung SW, Na BS, Chu HY.

J Nanosci Nanotechnol. 2014 Nov;14(11):8665-70.

PMID:
25958581
8.

Electrical Properties and Reliability Analysis of Solution-Processed Indium Tin Zinc Oxide Thin Film Transistors with O2-Plasma Treatment.

Ko SW, Kim SK, Kim JM, Cho JH, Park HS, Choi BD.

J Nanosci Nanotechnol. 2015 Oct;15(10):7476-81.

PMID:
26726354
9.

Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors.

Choi P, Lee J, Park H, Baek D, Lee J, Yi J, Kim S, Choi B.

J Nanosci Nanotechnol. 2016 May;16(5):4788-91.

PMID:
27483823
10.

Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

Faber H, Klaumünzer M, Voigt M, Galli D, Vieweg BF, Peukert W, Spiecker E, Halik M.

Nanoscale. 2011 Mar;3(3):897-9. doi: 10.1039/c0nr00800a. Epub 2010 Nov 29.

PMID:
21116548
11.
12.

Post annealing effects on the electrical characteristics of pentacene thin film transistors on flexible substrates.

Oh TY, Jeong SW, Chang S, Park JH, Kim JW, Choi K, Ha HJ, Hwang BY, Ju BK.

J Nanosci Nanotechnol. 2013 May;13(5):3491-4.

PMID:
23858886
13.

Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors.

Jang KS, Wee D, Kim YH, Kim J, Ahn T, Ka JW, Yi MH.

Langmuir. 2013 Jun 11;29(23):7143-50. doi: 10.1021/la401356u. Epub 2013 Jun 3.

PMID:
23724823
14.

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Liu A, Liu GX, Zhu HH, Xu F, Fortunato E, Martins R, Shan FK.

ACS Appl Mater Interfaces. 2014 Oct 22;6(20):17364-9. doi: 10.1021/am505602w. Epub 2014 Oct 9.

PMID:
25285983
15.

Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2.

Chu HC, Shen YS, Hsieh CH, Huang JH, Wu YH.

ACS Appl Mater Interfaces. 2015 Jul 22;7(28):15129-37. doi: 10.1021/acsami.5b02941. Epub 2015 Jul 13.

PMID:
26148216
16.

Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.

Park JH, Oh JY, Han SW, Lee TI, Baik HK.

ACS Appl Mater Interfaces. 2015 Mar 4;7(8):4494-503. doi: 10.1021/acsami.5b00036. Epub 2015 Feb 19.

PMID:
25664940
17.

High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO₂ high-k dielectric grown by spray pyrolysis in ambient air.

Adamopoulos G, Thomas S, Wöbkenberg PH, Bradley DD, McLachlan MA, Anthopoulos TD.

Adv Mater. 2011 Apr 26;23(16):1894-8. doi: 10.1002/adma.201003935. Epub 2011 Mar 22. No abstract available.

PMID:
21432911
18.

Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell.

Hirschmann J, Faber H, Halik M.

Nanoscale. 2012 Jan 21;4(2):444-7. doi: 10.1039/c2nr11589a. Epub 2011 Dec 12.

PMID:
22159764
19.

Photostable Zn2SnO4 nanowire transistors for transparent displays.

Lim T, Kim H, Meyyappan M, Ju S.

ACS Nano. 2012 Jun 26;6(6):4912-20. doi: 10.1021/nn300401w. Epub 2012 May 11.

PMID:
22578094
20.

Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process.

Jeon IY, Lee JY, Yoon DH.

J Nanosci Nanotechnol. 2013 Mar;13(3):1741-5.

PMID:
23755583
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