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Items: 1 to 20 of 107

1.

A ZnO nanowire-based photo-inverter with pulse-induced fast recovery.

Raza SR, Lee YT, Hosseini Shokouh SH, Ha R, Choi HJ, Im S.

Nanoscale. 2013 Nov 21;5(22):10829-34. doi: 10.1039/c3nr03801g. Epub 2013 Oct 1.

PMID:
24084851
2.

Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

Hosseini Shokouh SH, Raza SR, Lee HS, Im S.

Phys Chem Chem Phys. 2014 Aug 21;16(31):16367-72. doi: 10.1039/c4cp01266f.

PMID:
24985947
3.

Molybdenum disulfide nanoflake-zinc oxide nanowire hybrid photoinverter.

Hosseini Shokouh SH, Pezeshki A, Ali Raza SR, Choi K, Min SW, Jeon PJ, Lee HS, Im S.

ACS Nano. 2014 May 27;8(5):5174-81. doi: 10.1021/nn501230v. Epub 2014 Apr 21.

PMID:
24717126
4.

ZnO nanowire-based nonvolatile memory devices with Al2O3 layers as storage nodes.

Keem K, Kang J, Yoon C, Yeom D, Jeong DY, Park B, Park J, Kim S.

J Nanosci Nanotechnol. 2009 Jul;9(7):4240-3.

PMID:
19916437
5.

One-Dimensional Au-ZnO Heteronanostructures for Ultraviolet Light Detectors by a Two-Step Dielectrophoretic Assembly Method.

Ding H, Shao J, Ding Y, Liu W, Tian H, Li X.

ACS Appl Mater Interfaces. 2015 Jun 17;7(23):12713-8. doi: 10.1021/acsami.5b01362. Epub 2015 Jun 3.

PMID:
26009795
6.

Direct-write fabrication of a nanoscale digital logic element on a single nanowire.

Roy S, Gao Z.

Nanotechnology. 2010 Jun 18;21(24):245306. doi: 10.1088/0957-4484/21/24/245306. Epub 2010 May 25.

PMID:
20498519
7.

ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles.

Yeom D, Kang J, Yoon C, Park B, Jeong DY, Koh EK, Kim S.

J Nanosci Nanotechnol. 2009 May;9(5):3256-60.

PMID:
19453000
8.

Piezoelectric field effect transistor and nanoforce sensor based on a single ZnO nanowire.

Wang X, Zhou J, Song J, Liu J, Xu N, Wang ZL.

Nano Lett. 2006 Dec;6(12):2768-72.

PMID:
17163703
9.

Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.

Hong WK, Jo G, Sohn JI, Park W, Choe M, Wang G, Kahng YH, Welland ME, Lee T.

ACS Nano. 2010 Feb 23;4(2):811-8. doi: 10.1021/nn9014246.

PMID:
20112950
10.

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays.

Jeon S, Ahn SE, Song I, Kim CJ, Chung UI, Lee E, Yoo I, Nathan A, Lee S, Robertson J, Kim K.

Nat Mater. 2012 Feb 26;11(4):301-5. doi: 10.1038/nmat3256. Erratum in: Nat Mater. 2015 Apr;14(4):452.

PMID:
22367002
11.

Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate.

Kwak K, Cho K, Kim S.

Sensors (Basel). 2010;10(10):9118-26. doi: 10.3390/s101009118. Epub 2010 Oct 12.

12.

The influence of surface chemical dynamics on electrical and optical properties of ZnO nanowire field effect transistors.

Sohn JI, Hong WK, Lee MJ, Lee T, Sirringhaus H, Kang DJ, Welland ME.

Nanotechnology. 2009 Dec 16;20(50):505202. doi: 10.1088/0957-4484/20/50/505202. Epub 2009 Nov 19.

PMID:
19923649
13.

Long single ZnO nanowire for logic and memory circuits: NOT, NAND, NOR gate, and SRAM.

Lee YT, Ali Raza SR, Jeon PJ, Ha R, Choi HJ, Im S.

Nanoscale. 2013 May 21;5(10):4181-5. doi: 10.1039/c3nr01015e.

PMID:
23584636
14.

Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors.

Choe M, Park W, Kang JW, Jeong S, Hong WK, Lee BH, Park SJ, Lee T.

Nanotechnology. 2012 Dec 7;23(48):485201. doi: 10.1088/0957-4484/23/48/485201. Epub 2012 Nov 6.

PMID:
23128783
15.
16.

Gate Tuning of Förster Resonance Energy Transfer in a Graphene - Quantum Dot FET Photo-Detector.

Li R, Schneider LM, Heimbrodt W, Wu H, Koch M, Rahimi-Iman A.

Sci Rep. 2016 Jun 20;6:28224. doi: 10.1038/srep28224.

17.

Piezoelectric nanogenerator using p-type ZnO nanowire arrays.

Lu MP, Song J, Lu MY, Chen MT, Gao Y, Chen LJ, Wang ZL.

Nano Lett. 2009 Mar;9(3):1223-7. doi: 10.1021/nl900115y.

PMID:
19209870
18.

Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors.

Raza SR, Lee YT, Chang YG, Jeon PJ, Kim JH, Ha R, Choi HJ, Im S.

Phys Chem Chem Phys. 2013 Feb 28;15(8):2660-4. doi: 10.1039/c3cp44027c. Epub 2013 Jan 22.

PMID:
23340850
19.

High-Performance Flexible Ultraviolet (UV) Phototransistor Using Hybrid Channel of Vertical ZnO Nanorods and Graphene.

Dang VQ, Trung TQ, Duy le T, Kim BY, Siddiqui S, Lee W, Lee NE.

ACS Appl Mater Interfaces. 2015 May 27;7(20):11032-40. doi: 10.1021/acsami.5b02834. Epub 2015 May 12.

PMID:
25942324
20.

Piezoelectric coupling in a field-effect transistor with a nanohybrid channel of ZnO nanorods grown vertically on graphene.

Quang Dang V, Kim DI, Thai Duy L, Kim BY, Hwang BU, Jang M, Shin KS, Kim SW, Lee NE.

Nanoscale. 2014 Dec 21;6(24):15144-50. doi: 10.1039/c4nr04713c. Epub 2014 Nov 6.

PMID:
25374120
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