Format
Sort by

Send to

Choose Destination

Links from PubMed

Items: 1 to 20 of 132

1.

Size-controlled InGaN/GaN nanorod array fabrication and optical characterization.

Bae SY, Kong DJ, Lee JY, Seo DJ, Lee DS.

Opt Express. 2013 Jul 15;21(14):16854-62. doi: 10.1364/OE.21.016854.

PMID:
23938534
2.

InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays.

Yeh TW, Lin YT, Stewart LS, Dapkus PD, Sarkissian R, O'Brien JD, Ahn B, Nutt SR.

Nano Lett. 2012 Jun 13;12(6):3257-62. doi: 10.1021/nl301307a. Epub 2012 May 24.

PMID:
22587013
3.

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.

Li Q, Westlake KR, Crawford MH, Lee SR, Koleske DD, Figiel JJ, Cross KC, Fathololoumi S, Mi Z, Wang GT.

Opt Express. 2011 Dec 5;19(25):25528-34. doi: 10.1364/OE.19.025528.

PMID:
22273946
4.

A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.

Park H, Baik KH, Kim J, Ren F, Pearton SJ.

Opt Express. 2013 May 20;21(10):12908-13. doi: 10.1364/OE.21.012908.

PMID:
23736510
5.

Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111).

Cardin V, Dion-Bertrand LI, Grégoire P, Nguyen HP, Sakowicz M, Mi Z, Silva C, Leonelli R.

Nanotechnology. 2013 Feb 1;24(4):045702. doi: 10.1088/0957-4484/24/4/045702. Epub 2013 Jan 8.

PMID:
23299780
6.

Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays.

Hong CC, Ahn H, Wu CY, Gwo S.

Opt Express. 2009 Sep 28;17(20):17227-33. doi: 10.1364/OE.17.017227.

PMID:
19907509
7.

Spontaneous emission in GaN/InGaN photonic crystal nanopillars.

David A, Benisty H, Weisbuch C.

Opt Express. 2007 Dec 24;15(26):17991-8004.

PMID:
19551097
8.

Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.

Kang ES, Ju JW, Kim JS, Ahn HK, Lee JK, Kim JH, Shin DC, Lee IH.

J Nanosci Nanotechnol. 2007 Nov;7(11):4053-6.

PMID:
18047117
9.

Hierarchical structures consisting of SiO2 nanorods and p-GaN microdomes for efficiently harvesting solar energy for InGaN quantum well photovoltaic cells.

Ho CH, Lien DH, Chang HC, Lin CA, Kang CF, Hsing MK, Lai KY, He JH.

Nanoscale. 2012 Dec 7;4(23):7346-9. doi: 10.1039/c2nr32746e.

PMID:
23086234
10.

The controlled growth of GaN nanowires.

Hersee SD, Sun X, Wang X.

Nano Lett. 2006 Aug;6(8):1808-11.

PMID:
16895377
11.

Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.

Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.

Small. 2007 Nov;3(11):1873-7. No abstract available.

PMID:
17935062
12.

Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates.

Yang WQ, Dai L, You LP, Zhang BR, Shen B, Qin GG.

J Nanosci Nanotechnol. 2006 Dec;6(12):3780-3.

PMID:
17256330
13.
14.

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.

Son JH, Lee JL.

Opt Express. 2010 Mar 15;18(6):5466-71. doi: 10.1364/OE.18.005466.

PMID:
20389563
15.

Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template.

Xue JJ, Chen DJ, Liu B, Lu H, Zhang R, Zheng YD, Cui B, Wowchak AM, Dabiran AM, Xu K, Zhang JP.

Opt Express. 2012 Mar 26;20(7):8093-9. doi: 10.1364/OE.20.008093.

PMID:
22453480
16.

The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.

Jang HW, Ryu SW, Yu HK, Lee S, Lee JL.

Nanotechnology. 2010 Jan 15;21(2):025203. doi: 10.1088/0957-4484/21/2/025203. Epub 2009 Dec 3.

PMID:
19955615
17.

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

Nguyen HP, Cui K, Zhang S, Djavid M, Korinek A, Botton GA, Mi Z.

Nano Lett. 2012 Mar 14;12(3):1317-23. doi: 10.1021/nl203860b. Epub 2012 Feb 2.

PMID:
22283508
18.

Crystallography and elasticity of individual GaN nanotubes.

Liu B, Bando Y, Wang M, Tang C, Mitome M, Golberg D.

Nanotechnology. 2009 May 6;20(18):185705. doi: 10.1088/0957-4484/20/18/185705. Epub 2009 Apr 15.

PMID:
19420628
19.

Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.

Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C, Paladugu M, Zou J, Suvorova AA.

Nano Lett. 2006 Apr;6(4):599-604.

PMID:
16608251
20.

Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates.

Cui K, Fathololoumi S, Golam Kibria M, Botton GA, Mi Z.

Nanotechnology. 2012 Mar 2;23(8):085205. doi: 10.1088/0957-4484/23/8/085205. Epub 2012 Feb 1.

PMID:
22293649
Items per page

Supplemental Content

Write to the Help Desk