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Results: 1 to 20 of 287

Similar articles for PubMed (Select 23924287)

1.

Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.

Lee GH, Yu YJ, Cui X, Petrone N, Lee CH, Choi MS, Lee DY, Lee C, Yoo WJ, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J.

ACS Nano. 2013 Sep 24;7(9):7931-6. doi: 10.1021/nn402954e. Epub 2013 Aug 14.

PMID:
23924287
2.

Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.

Yu L, Lee YH, Ling X, Santos EJ, Shin YC, Lin Y, Dubey M, Kaxiras E, Kong J, Wang H, Palacios T.

Nano Lett. 2014 Jun 11;14(6):3055-63. doi: 10.1021/nl404795z. Epub 2014 May 14.

PMID:
24810658
3.

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.

Choi MS, Lee GH, Yu YJ, Lee DY, Lee SH, Kim P, Hone J, Yoo WJ.

Nat Commun. 2013;4:1624. doi: 10.1038/ncomms2652.

PMID:
23535645
4.

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

Lee GH, Cui X, Kim YD, Arefe G, Zhang X, Lee CH, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J.

ACS Nano. 2015 Jun 22. [Epub ahead of print]

PMID:
26083310
5.

Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.

Yoon J, Park W, Bae GY, Kim Y, Jang HS, Hyun Y, Lim SK, Kahng YH, Hong WK, Lee BH, Ko HC.

Small. 2013 Oct 11;9(19):3295-300. doi: 10.1002/smll.201300134. Epub 2013 Feb 18.

PMID:
23420782
6.

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

Liu Y, Wu H, Cheng HC, Yang S, Zhu E, He Q, Ding M, Li D, Guo J, Weiss NO, Huang Y, Duan X.

Nano Lett. 2015 May 13;15(5):3030-4. doi: 10.1021/nl504957p. Epub 2015 Apr 22.

PMID:
25879371
7.

Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene.

Amani M, Burke RA, Proie RM, Dubey M.

Nanotechnology. 2015 Mar 20;26(11):115202. doi: 10.1088/0957-4484/26/11/115202. Epub 2015 Feb 24.

PMID:
25709100
8.

Direct synthesis of van der Waals solids.

Lin YC, Lu N, Perea-Lopez N, Li J, Lin Z, Peng X, Lee CH, Sun C, Calderin L, Browning PN, Bresnehan MS, Kim MJ, Mayer TS, Terrones M, Robinson JA.

ACS Nano. 2014 Apr 22;8(4):3715-23. doi: 10.1021/nn5003858. Epub 2014 Mar 27.

PMID:
24641706
9.

Light-emitting diodes by band-structure engineering in van der Waals heterostructures.

Withers F, Del Pozo-Zamudio O, Mishchenko A, Rooney AP, Gholinia A, Watanabe K, Taniguchi T, Haigh SJ, Geim AK, Tartakovskii AI, Novoselov KS.

Nat Mater. 2015 Mar;14(3):301-6. doi: 10.1038/nmat4205. Epub 2015 Feb 2.

PMID:
25643033
10.

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters.

Yu WJ, Li Z, Zhou H, Chen Y, Wang Y, Huang Y, Duan X.

Nat Mater. 2013 Mar;12(3):246-52. doi: 10.1038/nmat3518. Epub 2012 Dec 16.

11.

Raman enhancement effect on two-dimensional layered materials: graphene, h-BN and MoS2.

Ling X, Fang W, Lee YH, Araujo PT, Zhang X, Rodriguez-Nieva JF, Lin Y, Zhang J, Kong J, Dresselhaus MS.

Nano Lett. 2014 Jun 11;14(6):3033-40. doi: 10.1021/nl404610c. Epub 2014 Apr 29.

PMID:
24780008
12.

Negative differential resistance in boron nitride graphene heterostructures: physical mechanisms and size scaling analysis.

Zhao Y, Wan Z, Xu X, Patil SR, Hetmaniuk U, Anantram MP.

Sci Rep. 2015 May 20;5:10712. doi: 10.1038/srep10712.

13.

Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

Hlaing H, Kim CH, Carta F, Nam CY, Barton RA, Petrone N, Hone J, Kymissis I.

Nano Lett. 2015 Jan 14;15(1):69-74. doi: 10.1021/nl5029599. Epub 2014 Dec 30.

PMID:
25517922
14.

Substrate engineering by hexagonal boron nitride/SiO2 for hysteresis-free graphene FETs and large-scale graphene p-n junctions.

Xu H, Wu J, Chen Y, Zhang H, Zhang J.

Chem Asian J. 2013 Oct;8(10):2446-52. doi: 10.1002/asia.201300505. Epub 2013 Jul 9.

PMID:
23840025
15.

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode.

Jariwala D, Sangwan VK, Wu CC, Prabhumirashi PL, Geier ML, Marks TJ, Lauhon LJ, Hersam MC.

Proc Natl Acad Sci U S A. 2013 Nov 5;110(45):18076-80. doi: 10.1073/pnas.1317226110. Epub 2013 Oct 21.

16.

Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.

Tsai MY, Tarasov A, Hesabi ZR, Taghinejad H, Campbell PM, Joiner CA, Adibi A, Vogel EM.

ACS Appl Mater Interfaces. 2015 Jun 17;7(23):12850-5. doi: 10.1021/acsami.5b02336. Epub 2015 Jun 4.

PMID:
26010011
17.

Electronic properties of graphene encapsulated with different two-dimensional atomic crystals.

Kretinin AV, Cao Y, Tu JS, Yu GL, Jalil R, Novoselov KS, Haigh SJ, Gholinia A, Mishchenko A, Lozada M, Georgiou T, Woods CR, Withers F, Blake P, Eda G, Wirsig A, Hucho C, Watanabe K, Taniguchi T, Geim AK, Gorbachev RV.

Nano Lett. 2014 Jun 11;14(6):3270-6. doi: 10.1021/nl5006542. Epub 2014 May 23.

PMID:
24844319
18.

Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.

Han GH, Rodríguez-Manzo JA, Lee CW, Kybert NJ, Lerner MB, Qi ZJ, Dattoli EN, Rappe AM, Drndic M, Johnson AT.

ACS Nano. 2013 Nov 26;7(11):10129-38. doi: 10.1021/nn404331f. Epub 2013 Nov 13.

PMID:
24182310
19.

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.

Song HS, Li SL, Gao L, Xu Y, Ueno K, Tang J, Cheng YB, Tsukagoshi K.

Nanoscale. 2013 Oct 21;5(20):9666-70. doi: 10.1039/c3nr01899g.

PMID:
23989804
20.

In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes.

Liu Z, Ma L, Shi G, Zhou W, Gong Y, Lei S, Yang X, Zhang J, Yu J, Hackenberg KP, Babakhani A, Idrobo JC, Vajtai R, Lou J, Ajayan PM.

Nat Nanotechnol. 2013 Feb;8(2):119-24. doi: 10.1038/nnano.2012.256. Epub 2013 Jan 27.

PMID:
23353677
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