Display Settings:

Format
Items per page
Sort by

Send to:

Choose Destination

Results: 1 to 20 of 147

1.

Composition fluctuation of in and well-width fluctuation in InGaN/GaN multiple quantum wells in light-emitting diode devices.

Gu GH, Jang DH, Nam KB, Park CG.

Microsc Microanal. 2013 Aug;19 Suppl 5:99-104. doi: 10.1017/S1431927613012427.

PMID:
23920184
[PubMed]
2.

Single nanowire light-emitting diodes using uniaxial and coaxial InGaN/GaN multiple quantum wells synthesized by metalorganic chemical vapor deposition.

Ra YH, Navamathavan R, Yoo HI, Lee CR.

Nano Lett. 2014 Mar 12;14(3):1537-45. doi: 10.1021/nl404794v. Epub 2014 Feb 25.

PMID:
24564712
[PubMed - in process]
3.

The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes

Nakamura S.

Science. 1998 Aug 14;281(5379):955-61.

PMID:
9703504
[PubMed - as supplied by publisher]
4.

Effects of growth pressure on the structural and optical properties of multi quantum wells (MQWs) in blue LED.

Jang DH, Gu GH, Lee BH, Park CG.

Ultramicroscopy. 2013 Apr;127:114-8. doi: 10.1016/j.ultramic.2012.07.009. Epub 2012 Jul 27. Erratum in: Ultramicroscopy. 2013 Oct;133:120.

PMID:
22940530
[PubMed]
5.

Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.

Riley JR, Padalkar S, Li Q, Lu P, Koleske DD, Wierer JJ, Wang GT, Lauhon LJ.

Nano Lett. 2013 Sep 11;13(9):4317-25. doi: 10.1021/nl4021045. Epub 2013 Aug 12.

PMID:
23919559
[PubMed - indexed for MEDLINE]
6.

Electron microscopy investigations of V defects in multiple InGaN/GaN quantum wells and InGaN quantum dots.

Yang JR, Li WC, Tsai HL, Hsu JT, Shiojiri M.

J Microsc. 2010 Mar;237(3):275-81. doi: 10.1111/j.1365-2818.2009.03242.x.

PMID:
20500380
[PubMed]
7.

Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy.

Bright AN, Sharma N, Humphreys CJ.

J Electron Microsc (Tokyo). 2001;50(6):489-95.

PMID:
11918415
[PubMed]
8.

Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.

Kang ES, Ju JW, Kim JS, Ahn HK, Lee JK, Kim JH, Shin DC, Lee IH.

J Nanosci Nanotechnol. 2007 Nov;7(11):4053-6.

PMID:
18047117
[PubMed - indexed for MEDLINE]
9.

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.

Zhao P, Zhao H.

Opt Express. 2012 Sep 10;20 Suppl 5:A765-76. doi: 10.1364/OE.20.00A765.

PMID:
23037543
[PubMed]
10.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

Lv W, Wang L, Wang J, Hao Z, Luo Y.

Nanoscale Res Lett. 2012 Nov 7;7(1):617. doi: 10.1186/1556-276X-7-617.

PMID:
23134721
[PubMed]
Free PMC Article
11.

Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.

Lee KJ, Kim SJ, Kim JJ, Hwang K, Kim ST, Park SJ.

Opt Express. 2014 Jun 30;22 Suppl 4:A1164-73. doi: 10.1364/OE.22.0A1164.

PMID:
24978079
[PubMed - in process]
12.

Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique.

Song H, Kim JS, Kim EK, Seo YG, Hwang SM.

Nanotechnology. 2010 Apr 2;21(13):134026. doi: 10.1088/0957-4484/21/13/134026. Epub 2010 Mar 8.

PMID:
20208099
[PubMed]
13.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 Jan 13;22(1):809-16. doi: 10.1364/OE.22.000809.

PMID:
24515040
[PubMed - in process]
14.

Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy.

Sun CK, Chu SW, Tai SP, Keller S, Abare A, Mishra UK, DenBaars SP.

Scanning. 2001 May-Jun;23(3):182-92.

PMID:
11405303
[PubMed]
15.
16.

High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

Ra YH, Navamathavan R, Park JH, Lee CR.

ACS Appl Mater Interfaces. 2013 Mar;5(6):2111-7. doi: 10.1021/am303056v. Epub 2013 Mar 6.

PMID:
23432423
[PubMed]
17.

M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

Koester R, Hwang JS, Salomon D, Chen X, Bougerol C, Barnes JP, Dang Dle S, Rigutti L, de Luna Bugallo A, Jacopin G, Tchernycheva M, Durand C, Eymery J.

Nano Lett. 2011 Nov 9;11(11):4839-45. doi: 10.1021/nl202686n. Epub 2011 Oct 11.

PMID:
21967509
[PubMed - indexed for MEDLINE]
18.

Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes.

Armstrong A, Henry TA, Koleske DD, Crawford MH, Lee SR.

Opt Express. 2012 Nov 5;20(23):A812-21.

PMID:
23326828
[PubMed]
19.

Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes.

Armstrong A, Henry TA, Koleske DD, Crawford MH, Lee SR.

Opt Express. 2012 Nov 5;20 Suppl 6:A812-21. doi: 10.1364/OE.20.00A812.

PMID:
23187657
[PubMed]
20.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.

Soh CB, Liu W, Yong AM, Chua SJ, Chow SY, Tripathy S, Tan RJ.

Nanoscale Res Lett. 2010 Aug 1;5(11):1788-1794.

PMID:
21124627
[PubMed]
Free PMC Article

Display Settings:

Format
Items per page
Sort by

Send to:

Choose Destination

Supplemental Content

Write to the Help Desk