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Items: 1 to 20 of 114

1.

Dually active silicon nanowire transistors and circuits with equal electron and hole transport.

Heinzig A, Mikolajick T, Trommer J, Grimm D, Weber WM.

Nano Lett. 2013 Sep 11;13(9):4176-81. doi: 10.1021/nl401826u. Epub 2013 Aug 14.

PMID:
23919720
2.

Reconfigurable silicon nanowire transistors.

Heinzig A, Slesazeck S, Kreupl F, Mikolajick T, Weber WM.

Nano Lett. 2012 Jan 11;12(1):119-24. doi: 10.1021/nl203094h. Epub 2011 Dec 1.

PMID:
22111808
3.

Programmable nanowire circuits for nanoprocessors.

Yan H, Choe HS, Nam S, Hu Y, Das S, Klemic JF, Ellenbogen JC, Lieber CM.

Nature. 2011 Feb 10;470(7333):240-4. doi: 10.1038/nature09749.

PMID:
21307937
4.

Complementary symmetry nanowire logic circuits: experimental demonstrations and in silico optimizations.

Sheriff BA, Wang D, Heath JR, Kurtin JN.

ACS Nano. 2008 Sep 23;2(9):1789-98. doi: 10.1021/nn800025q.

PMID:
19206417
5.

Multimode silicon nanowire transistors.

Glassner S, Zeiner C, Periwal P, Baron T, Bertagnolli E, Lugstein A.

Nano Lett. 2014 Nov 12;14(11):6699-703. doi: 10.1021/nl503476t. Epub 2014 Oct 15.

6.

Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating.

Lokteva I, Thiemann S, Gannott F, Zaumseil J.

Nanoscale. 2013 May 21;5(10):4230-5. doi: 10.1039/c3nr33723e.

PMID:
23545580
7.

Solution-processed ambipolar organic field-effect transistors and inverters.

Meijer EJ, de Leeuw DM, Setayesh S, van Veenendaal E, Huisman BH, Blom PW, Hummelen JC, Scherf U, Kadam J, Klapwijk TM.

Nat Mater. 2003 Oct;2(10):678-82. Epub 2003 Sep 21. Erratum in: Nat Mater. 2003 Dec;2(12):834.

PMID:
14502272
8.

Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

Nam S, Jiang X, Xiong Q, Ham D, Lieber CM.

Proc Natl Acad Sci U S A. 2009 Dec 15;106(50):21035-8. doi: 10.1073/pnas.0911713106. Epub 2009 Nov 25.

9.

Role of self-assembled monolayer passivation in electrical transport properties and flicker noise of nanowire transistors.

Kim S, Carpenter PD, Jean RK, Chen H, Zhou C, Ju S, Janes DB.

ACS Nano. 2012 Aug 28;6(8):7352-61. doi: 10.1021/nn302484c. Epub 2012 Jul 12.

PMID:
22775468
10.

Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.

Lee M, Koo J, Chung EA, Jeong DY, Koo YS, Kim S.

Nanotechnology. 2009 Nov 11;20(45):455201. doi: 10.1088/0957-4484/20/45/455201. Epub 2009 Oct 13.

PMID:
19822935
11.

A III-V nanowire channel on silicon for high-performance vertical transistors.

Tomioka K, Yoshimura M, Fukui T.

Nature. 2012 Aug 9;488(7410):189-92. doi: 10.1038/nature11293.

PMID:
22854778
12.

Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor.

Han JW, Rim T, Baek CK, Meyyappan M.

ACS Appl Mater Interfaces. 2015 Sep 30;7(38):21263-9. doi: 10.1021/acsami.5b05479. Epub 2015 Sep 18.

PMID:
26381613
13.

Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates.

Cao Q, Kim HS, Pimparkar N, Kulkarni JP, Wang C, Shim M, Roy K, Alam MA, Rogers JA.

Nature. 2008 Jul 24;454(7203):495-500. doi: 10.1038/nature07110.

PMID:
18650920
14.

Charge transport in nanoscale junctions.

Albrecht T, Kornyshev A, Bjørnholm T.

J Phys Condens Matter. 2008 Sep 3;20(37):370301. doi: 10.1088/0953-8984/20/37/370301. Epub 2008 Aug 6.

PMID:
21694407
15.

Direct observation of single-charge-detection capability of nanowire field-effect transistors.

Salfi J, Savelyev IG, Blumin M, Nair SV, Ruda HE.

Nat Nanotechnol. 2010 Oct;5(10):737-41. doi: 10.1038/nnano.2010.180. Epub 2010 Sep 19. Erratum in: Nat Nanotechnol. 2010 Dec;5(12):832.

PMID:
20852638
16.

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

Hertel S, Waldmann D, Jobst J, Albert A, Albrecht M, Reshanov S, Schöner A, Krieger M, Weber HB.

Nat Commun. 2012 Jul 17;3:957. doi: 10.1038/ncomms1955.

PMID:
22805564
17.
18.

Low-voltage p- and n-type organic self-assembled monolayer field effect transistors.

Novak M, Ebel A, Meyer-Friedrichsen T, Jedaa A, Vieweg BF, Yang G, Voitchovsky K, Stellacci F, Spiecker E, Hirsch A, Halik M.

Nano Lett. 2011 Jan 12;11(1):156-9. doi: 10.1021/nl103200r. Epub 2010 Dec 6.

PMID:
21133354
19.

Ge/Si nanowire heterostructures as high-performance field-effect transistors.

Xiang J, Lu W, Hu Y, Wu Y, Yan H, Lieber CM.

Nature. 2006 May 25;441(7092):489-93.

PMID:
16724062
20.

Charge injection in solution-processed organic field-effect transistors: physics, models and characterization methods.

Natali D, Caironi M.

Adv Mater. 2012 Mar 15;24(11):1357-87. doi: 10.1002/adma.201104206. Epub 2012 Feb 21. Review.

PMID:
22354535
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