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Results: 1 to 20 of 104

1.

Strain relief and shape oscillations in site-controlled coherent SiGe islands.

Hrauda N, Zhang JJ, Groiss H, Etzelstorfer T, Holý V, Bauer G, Deiter C, Seeck OH, Stangl J.

Nanotechnology. 2013 Aug 23;24(33):335707. doi: 10.1088/0957-4484/24/33/335707. Epub 2013 Jul 26.

PMID:
23892543
[PubMed]
2.

Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixing.

Zhang JJ, Montalenti F, Rastelli A, Hrauda N, Scopece D, Groiss H, Stangl J, Pezzoli F, Schäffler F, Schmidt OG, Miglio L, Bauer G.

Phys Rev Lett. 2010 Oct 15;105(16):166102. Epub 2010 Oct 12.

PMID:
21230984
[PubMed]
3.

Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space.

Hrauda N, Zhang JJ, Süess MJ, Wintersberger E, Holý V, Stangl J, Deiter C, Seeck OH, Bauer G.

Nanotechnology. 2012 Nov 23;23(46):465705. doi: 10.1088/0957-4484/23/46/465705. Epub 2012 Oct 23.

PMID:
23092941
[PubMed]
4.

X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates.

Zaumseil P, Kozlowski G, Yamamoto Y, Schubert MA, Schroeder T.

J Appl Crystallogr. 2013 Aug 1;46(Pt 4):868-873. Epub 2013 Jun 7.

PMID:
24046490
[PubMed]
Free PMC Article
5.

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy.

Bollani M, Chrastina D, Montuori V, Terziotti D, Bonera E, Vanacore GM, Tagliaferri A, Sordan R, Spinella C, Nicotra G.

Nanotechnology. 2012 Feb 3;23(4):045302. doi: 10.1088/0957-4484/23/4/045302. Epub 2012 Jan 4.

PMID:
22214840
[PubMed]
6.

Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates.

Grydlik M, Langer G, Fromherz T, Schäffler F, Brehm M.

Nanotechnology. 2013 Mar 15;24(10):105601. doi: 10.1088/0957-4484/24/10/105601. Epub 2013 Feb 15.

PMID:
23416837
[PubMed]
7.

Shape and size distribution of molecular beam epitaxy grown self-assembled Ge islands on Si (001) substrates.

Singha RK, Das S, Das K, Majumdar S, Dhar A, Ray SK.

J Nanosci Nanotechnol. 2008 Aug;8(8):4101-5.

PMID:
19049183
[PubMed]
8.

Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates.

Hackl F, Grydlik M, Brehm M, Groiss H, Schäffler F, Fromherz T, Bauer G.

Nanotechnology. 2011 Apr 22;22(16):165302. doi: 10.1088/0957-4484/22/16/165302. Epub 2011 Mar 11.

PMID:
21393825
[PubMed - indexed for MEDLINE]
9.

Direct determination of strain and composition profiles in SiGe islands by anomalous x-Ray diffraction at high momentum transfer.

Schülli TU, Stangl J, Zhong Z, Lechner RT, Sztucki M, Metzger TH, Bauer G.

Phys Rev Lett. 2003 Feb 14;90(6):066105. Epub 2003 Feb 13.

PMID:
12633307
[PubMed]
10.

Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source.

Vanacore GM, Zani M, Bollani M, Bonera E, Nicotra G, Osmond J, Capellini G, Isella G, Tagliaferri A.

Nanotechnology. 2014 Apr 4;25(13):135606. doi: 10.1088/0957-4484/25/13/135606. Epub 2014 Mar 4.

PMID:
24594569
[PubMed - in process]
11.

Ordered Arrays of SiGe Islands from Low-Energy PECVD.

Bollani M, Bonera E, Chrastina D, Fedorov A, Montuori V, Picco A, Tagliaferri A, Vanacore G, Sordan R.

Nanoscale Res Lett. 2010 Sep 7;5(12):1917-1920.

PMID:
21170397
[PubMed]
Free PMC Article
12.

Strain evolution in coherent Ge/Si islands

Liu CP, Gibson JM, Cahill DG, Kamins TI, Basile DP, Williams RS.

Phys Rev Lett. 2000 Feb 28;84(9):1958-61.

PMID:
11017670
[PubMed - as supplied by publisher]
13.

Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si.

Ritter CJ, Hu C, Chizmeshya AV, Tolle J, Klewer D, Tsong IS, Kouvetakis J.

J Am Chem Soc. 2005 Jul 13;127(27):9855-64.

PMID:
15998091
[PubMed]
14.

Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars.

Kozlowski G, Zaumseil P, Schubert MA, Yamamoto Y, Bauer J, Schülli TU, Tillack B, Schroeder T.

Nanotechnology. 2012 Mar 23;23(11):115704. doi: 10.1088/0957-4484/23/11/115704. Epub 2012 Feb 28.

PMID:
22369884
[PubMed]
15.

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands.

Brehm M, Grydlik M, Hackl F, Lausecker E, Fromherz T, Bauer G.

Nanoscale Res Lett. 2010 Aug 5;5(12):1868-1872.

PMID:
21170407
[PubMed]
Free PMC Article
16.

Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering.

Paskiewicz DM, Tanto B, Savage DE, Lagally MG.

ACS Nano. 2011 Jul 26;5(7):5814-22. doi: 10.1021/nn201547k. Epub 2011 Jun 16.

PMID:
21650206
[PubMed]
17.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Bollani M, Chrastina D, Fedorov A, Sordan R, Picco A, Bonera E.

Nanotechnology. 2010 Nov 26;21(47):475302. doi: 10.1088/0957-4484/21/47/475302. Epub 2010 Oct 29.

PMID:
21030775
[PubMed]
18.

Reversible shape evolution of Ge islands on Si(001).

Rastelli A, Kummer M, von Känel H.

Phys Rev Lett. 2001 Dec 17;87(25):256101. Epub 2001 Nov 28.

PMID:
11736588
[PubMed]
19.

Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography.

Pezzoli F, Stoffel M, Merdzhanova T, Rastelli A, Schmidt O.

Nanoscale Res Lett. 2009 Jun 6;4(9):1073-7. doi: 10.1007/s11671-009-9360-4.

PMID:
20596332
[PubMed]
Free PMC Article
20.

The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy.

Persichetti L, Sgarlata A, Fanfoni M, Balzarotti A.

J Phys Condens Matter. 2013 Oct 2;25(39):395801. doi: 10.1088/0953-8984/25/39/395801. Epub 2013 Sep 3.

PMID:
23999271
[PubMed]

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