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Results: 1 to 20 of 93

1.

Ohmic contacts to N-face p-GaN using Ni/Au for the fabrication of polarization inverted light-emitting diodes.

Han SC, Kim JK, Kim JY, Lee DM, Yoon JS, Kim JK, Schubert EF, Lee JM.

J Nanosci Nanotechnol. 2013 Aug;13(8):5715-8.

PMID:
23882823
[PubMed]
2.

Highly reliable Ti-based ohmic contact to N-polar n-type GaN for vertical-geometry light-emitting diodes by using a Ta barrier layer.

Park JS, Han J, Seong TY.

Opt Express. 2014 May 5;22 Suppl 3:A759-64. doi: 10.1364/OE.22.00A759.

PMID:
24922383
[PubMed - in process]
3.

Interface observation in Au/Ni/p-GaN studied by HREM and energy-filtering TEM.

Lim SH, Ra TY, Kim WY.

J Electron Microsc (Tokyo). 2003;52(5):459-64.

PMID:
14700077
[PubMed]
4.

Evaluation of metal/indium-tin-oxide for transparent low-resistance contacts to p-type GaN.

Hou W, Stark C, You S, Zhao L, Detchprohm T, Wetzel C.

Appl Opt. 2012 Aug 10;51(23):5596-600. doi: 10.1364/AO.51.005596.

PMID:
22885570
[PubMed]
5.

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires.

Herrero AM, Blanchard PT, Sanders A, Brubaker MD, Sanford NA, Roshko A, Bertness KA.

Nanotechnology. 2012 Sep 14;23(36):365203. doi: 10.1088/0957-4484/23/36/365203. Epub 2012 Aug 21.

PMID:
22910019
[PubMed]
6.

Nano-scaled Pt/Ag/Ni/Au contacts on p-type GaN for low contact resistance and high reflectivity.

Kwon YW, Ju IC, Kim SK, Choi YS, Kim MH, Yoo SH, Kang DH, Sung HK, Shin K, Ko CG.

J Nanosci Nanotechnol. 2011 Jul;11(7):6157-61.

PMID:
22121677
[PubMed]
7.

Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes.

Kwak JS, Song JO, Seong TY, Kim BI, Cho J, Sone C, Park Y.

J Nanosci Nanotechnol. 2006 Nov;6(11):3547-50.

PMID:
17252808
[PubMed - indexed for MEDLINE]
8.

Interfacial reactions of nano-structured Cu-doped indium oxide/indium tin oxide ohmic contacts to p-GaN.

Yoon YJ, Chae SW, Kim BK, Park MJ, Kwak JS.

J Nanosci Nanotechnol. 2010 May;10(5):3254-9.

PMID:
20358934
[PubMed]
9.

Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

Wang C, Kim NY.

Nanoscale Res Lett. 2012 Feb 7;7(1):107. doi: 10.1186/1556-276X-7-107.

PMID:
22313812
[PubMed]
Free PMC Article
10.

Impact of interlayer processing conditions on the performance of GaN light-emitting diode with specific NiOx/graphene electrode.

Chandramohan S, Kang JH, Ryu BD, Yang JH, Kim S, Kim H, Park JB, Kim TY, Cho BJ, Suh EK, Hong CH.

ACS Appl Mater Interfaces. 2013 Feb;5(3):958-64. doi: 10.1021/am3026079. Epub 2013 Jan 23.

PMID:
23305126
[PubMed]
11.

High performance of GaN-based flip-chip light-emitting diodes with hole-shape patterned ITO ohmic contact layer and AgIn reflector.

Lee SH, Baek JH, Kim TH, Park LS.

J Nanosci Nanotechnol. 2011 Oct;11(10):8695-9.

PMID:
22400245
[PubMed]
12.

Formation of gallium vacancies and their effects on the nanostructure of Pd/Ir/Au ohmic contact to p-type GaN.

Kim KN, Kim TH, Seo JS, Kim KS, Bae JW, Yeom GY.

J Nanosci Nanotechnol. 2013 Dec;13(12):8106-9.

PMID:
24266200
[PubMed]
13.

Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors.

Jang CO, Kim TH, Lee SY, Kim DJ, Lee SK.

Nanotechnology. 2008 Aug 27;19(34):345203. doi: 10.1088/0957-4484/19/34/345203. Epub 2008 Jul 15.

PMID:
21730641
[PubMed]
14.

Enhanced Current Transport and Injection in Thin-Film Gallium-Nitride Light-Emitting Diodes by Laser-Based Doping.

Kim SJ, Kim KH, Chung HY, Shin HW, Lee BR, Jeong T, Park HJ, Kim TG.

ACS Appl Mater Interfaces. 2014 Sep 12. [Epub ahead of print]

PMID:
25215432
[PubMed - as supplied by publisher]
15.

Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode.

Liu YJ, Huang CC, Chen TY, Hsu CS, Liou JK, Tsai TY, Liu WC.

Opt Express. 2011 Jul 18;19(15):14662-70. doi: 10.1364/OE.19.014662.

PMID:
21934828
[PubMed]
16.

Interface and transport properties of metallization contacts to flat and wet-etching roughed N-polar n-type GaN.

Wang L, Liu Z, Guo E, Yang H, Yi X, Wang G.

ACS Appl Mater Interfaces. 2013 Jun 26;5(12):5797-803. doi: 10.1021/am401354z. Epub 2013 Jun 6.

PMID:
23716508
[PubMed]
17.

X-ray absorption spectroscopy investigations on oxidized Ni/Au contacts to p-GaN.

Jan JC, Asokan K, Chiou JW, Pong WF, Tseng PK, Chen LC, Chen FR, Lee JF, Wu JS, Lin HJ, Chen CT.

J Synchrotron Radiat. 2001 Mar 1;8(Pt 2):827-9.

PMID:
11512946
[PubMed]
18.

Investigation of metallic interdiffusion in Al(x)Ga(1-x)N/GaN/sapphire heterostructures used for microelectronic devices by SEM/EDX and SIMS depth profiling.

Téllez H, Vadillo JM, Laserna JJ.

Anal Bioanal Chem. 2010 Aug;397(7):2865-71. doi: 10.1007/s00216-010-3482-5. Epub 2010 Feb 20.

PMID:
20174785
[PubMed]
19.

Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts.

Liu SY, Lin YC, Ye JC, Tu SJ, Huang FW, Lee ML, Lai WC, Sheu JK.

Opt Express. 2011 Nov 7;19 Suppl 6:A1196-201. doi: 10.1364/OE.19.0A1196.

PMID:
22109615
[PubMed]
20.

Enhanced light emission of GaN-based diodes with a NiO(x)/graphene hybrid electrode.

Zhang Y, Li X, Wang L, Yi X, Wu D, Zhu H, Wang G.

Nanoscale. 2012 Sep 28;4(19):5852-5. doi: 10.1039/c2nr31986a. Epub 2012 Aug 24.

PMID:
22918190
[PubMed]

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