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Similar articles for PubMed (Select 23803977)

1.

Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature.

Seo JS, Jeon JH, Hwang YH, Park H, Ryu M, Park SH, Bae BS.

Sci Rep. 2013;3:2085. doi: 10.1038/srep02085.

2.

Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors.

Lee KH, Park JH, Yoo YB, Jang WS, Oh JY, Chae SS, Moon KJ, Myoung JM, Baik HK.

ACS Appl Mater Interfaces. 2013 Apr 10;5(7):2585-92. doi: 10.1021/am3032629. Epub 2013 Mar 19.

PMID:
23461268
3.

Improved electrical performance and bias stability of solution-processed active bilayer structure of indium zinc oxide based TFT.

Seo JS, Bae BS.

ACS Appl Mater Interfaces. 2014 Sep 10;6(17):15335-43. doi: 10.1021/am5037934. Epub 2014 Aug 20.

PMID:
25116128
4.

Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric.

Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Baik HK.

ACS Appl Mater Interfaces. 2013 Jan 23;5(2):410-7. doi: 10.1021/am3022625. Epub 2013 Jan 8.

PMID:
23267443
5.

Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.

Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Lee HW, Han SW, Baik HK.

ACS Appl Mater Interfaces. 2013 Aug 28;5(16):8067-75. doi: 10.1021/am402153g. Epub 2013 Aug 8.

PMID:
23883390
6.

Low-temperature, high-performance, solution-processed indium oxide thin-film transistors.

Han SY, Herman GS, Chang CH.

J Am Chem Soc. 2011 Apr 13;133(14):5166-9. doi: 10.1021/ja104864j. Epub 2011 Mar 18.

PMID:
21417268
7.

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Liu A, Liu GX, Zhu HH, Xu F, Fortunato E, Martins R, Shan FK.

ACS Appl Mater Interfaces. 2014 Oct 22;6(20):17364-9. doi: 10.1021/am505602w. Epub 2014 Oct 9.

PMID:
25285983
8.

Low-temperature solution-processed amorphous indium tin oxide field-effect transistors.

Kim HS, Kim MG, Ha YG, Kanatzidis MG, Marks TJ, Facchetti A.

J Am Chem Soc. 2009 Aug 12;131(31):10826-7. doi: 10.1021/ja903886r.

PMID:
19603806
9.

Thin transparent W-doped indium-zinc oxide (WIZO) layer on glass.

Lee YJ, Lim BW, Kim JH, Kim TW, Oh BY, Heo GS, Kim KY.

J Nanosci Nanotechnol. 2012 Jul;12(7):5604-8.

PMID:
22966618
10.

Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing.

Park WT, Son I, Park HW, Chung KB, Xu Y, Lee T, Noh YY.

ACS Appl Mater Interfaces. 2015 Jun 24;7(24):13289-94. doi: 10.1021/acsami.5b04374. Epub 2015 Jun 12.

PMID:
26043206
11.

Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.

Je SY, Son BG, Kim HG, Park MY, Do LM, Choi R, Jeong JK.

ACS Appl Mater Interfaces. 2014 Nov 12;6(21):18693-703. doi: 10.1021/am504231h. Epub 2014 Oct 14.

PMID:
25285585
12.

Exploratory combustion synthesis: amorphous indium yttrium oxide for thin-film transistors.

Hennek JW, Kim MG, Kanatzidis MG, Facchetti A, Marks TJ.

J Am Chem Soc. 2012 Jun 13;134(23):9593-6. doi: 10.1021/ja303589v. Epub 2012 Jun 1.

PMID:
22625409
13.

Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.

Park JH, Oh JY, Han SW, Lee TI, Baik HK.

ACS Appl Mater Interfaces. 2015 Mar 4;7(8):4494-503. doi: 10.1021/acsami.5b00036. Epub 2015 Feb 19.

PMID:
25664940
14.

Photobias instability of high performance solution processed amorphous zinc tin oxide transistors.

Kim YJ, Yang BS, Oh S, Han SJ, Lee HW, Heo J, Jeong JK, Kim HJ.

ACS Appl Mater Interfaces. 2013 Apr 24;5(8):3255-61. doi: 10.1021/am400110y. Epub 2013 Apr 12.

PMID:
23540523
15.

Optically transparent thin-film transistors based on 2D multilayer MoS₂ and indium zinc oxide electrodes.

Kwon J, Hong YK, Kwon HJ, Park YJ, Yoo B, Kim J, Grigoropoulos CP, Oh MS, Kim S.

Nanotechnology. 2015 Jan 21;26(3):035202. doi: 10.1088/0957-4484/26/3/035202. Epub 2014 Dec 30.

PMID:
25548952
16.

Solution-processed LiF-doped ZnO films for high performance low temperature field effect transistors and inverted solar cells.

Chang J, Lin Z, Zhu C, Chi C, Zhang J, Wu J.

ACS Appl Mater Interfaces. 2013 Jul 24;5(14):6687-93. doi: 10.1021/am4014488. Epub 2013 Jul 1.

PMID:
23773013
17.

Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors.

Kilian D, Polster S, Vogeler I, Jank MP, Frey L, Peukert W.

ACS Appl Mater Interfaces. 2014 Aug 13;6(15):12245-51. doi: 10.1021/am501837u. Epub 2014 Jul 28.

PMID:
25029269
18.

Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.

Kim HS, Park JS, Jeong HK, Son KS, Kim TS, Seon JB, Lee E, Chung JG, Kim DH, Ryu M, Lee SY.

ACS Appl Mater Interfaces. 2012 Oct 24;4(10):5416-21. doi: 10.1021/am301342x. Epub 2012 Sep 19.

PMID:
22957907
19.

Approaches to label-free flexible DNA biosensors using low-temperature solution-processed InZnO thin-film transistors.

Jung J, Kim SJ, Lee KW, Yoon DH, Kim YG, Kwak HY, Dugasani SR, Park SH, Kim HJ.

Biosens Bioelectron. 2014 May 15;55:99-105. doi: 10.1016/j.bios.2013.11.076. Epub 2013 Dec 10.

PMID:
24368226
20.

Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

Lim C, Oh JY, Koo JB, Park CW, Jung SW, Na BS, Chu HY.

J Nanosci Nanotechnol. 2014 Nov;14(11):8665-70.

PMID:
25958581
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