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Items: 1 to 20 of 118

1.

Charge transfer and current fluctuations in single layer graphene transistors modified by self-assembled C60 adlayers.

Wang R, Wang S, Wang X, Meyer JA, Hedegård P, Laursen BW, Cheng Z, Qiu X.

Small. 2013 Jul 22;9(14):2420-6. doi: 10.1002/smll.201300869. Epub 2013 Jun 21.

PMID:
23788519
2.

Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms.

Rumyantsev S, Liu G, Stillman W, Shur M, Balandin AA.

J Phys Condens Matter. 2010 Oct 6;22(39):395302. doi: 10.1088/0953-8984/22/39/395302. Epub 2010 Sep 10.

PMID:
21403224
3.

Charge noise in graphene transistors.

Heller I, Chatoor S, Männik J, Zevenbergen MA, Oostinga JB, Morpurgo AF, Dekker C, Lemay SG.

Nano Lett. 2010 May 12;10(5):1563-7. doi: 10.1021/nl903665g.

PMID:
20373788
4.

Observation of Ground- and Excited-State Charge Transfer at the C60/Graphene Interface.

Jnawali G, Rao Y, Beck JH, Petrone N, Kymissis I, Hone J, Heinz TF.

ACS Nano. 2015 Jul 28;9(7):7175-85. doi: 10.1021/acsnano.5b01896. Epub 2015 Jun 22.

PMID:
26072947
5.

Computational studies on non-covalent interactions of carbon and boron fullerenes with graphene.

Manna AK, Pati SK.

Chemphyschem. 2013 Jun 24;14(9):1844-52. doi: 10.1002/cphc.201300155. Epub 2013 Apr 24. Erratum in: Chemphyschem. 2013 Sep 16;14(13):2881.

PMID:
23616400
6.

Highly tunable charge transport in layer-by-layer assembled graphene transistors.

Hwang H, Joo P, Kang MS, Ahn G, Han JT, Kim BS, Cho JH.

ACS Nano. 2012 Mar 27;6(3):2432-40. doi: 10.1021/nn2047197. Epub 2012 Mar 2.

PMID:
22314208
7.

Hysteresis of electronic transport in graphene transistors.

Wang H, Wu Y, Cong C, Shang J, Yu T.

ACS Nano. 2010 Dec 28;4(12):7221-8. doi: 10.1021/nn101950n. Epub 2010 Nov 3.

PMID:
21047068
8.

Understanding surfactant/graphene interactions using a graphene field effect transistor: relating molecular structure to hysteresis and carrier mobility.

Shih CJ, Paulus GL, Wang QH, Jin Z, Blankschtein D, Strano MS.

Langmuir. 2012 Jun 5;28(22):8579-86. doi: 10.1021/la3008816. Epub 2012 May 23.

PMID:
22587527
9.

Region-selective self-assembly of functionalized carbon allotropes from solution.

Wang Z, Mohammadzadeh S, Schmaltz T, Kirschner J, Khassanov A, Eigler S, Mundloch U, Backes C, Steinrück HG, Magerl A, Hauke F, Hirsch A, Halik M.

ACS Nano. 2013 Dec 23;7(12):11427-34. doi: 10.1021/nn405488n. Epub 2013 Dec 2.

PMID:
24274682
10.

DC modeling and the source of flicker noise in passivated carbon nanotube transistors.

Kim S, Kim S, Janes DB, Mohammadi S, Back J, Shim M.

Nanotechnology. 2010 Sep 24;21(38):385203. doi: 10.1088/0957-4484/21/38/385203. Epub 2010 Aug 27.

PMID:
20798468
11.

Mobility-dependent low-frequency noise in graphene field-effect transistors.

Zhang Y, Mendez EE, Du X.

ACS Nano. 2011 Oct 25;5(10):8124-30. doi: 10.1021/nn202749z. Epub 2011 Sep 19.

PMID:
21913642
12.

Effects of electron-transfer chemical modification on the electrical characteristics of graphene.

Fan XY, Nouchi R, Yin LC, Tanigaki K.

Nanotechnology. 2010 Nov 26;21(47):475208. doi: 10.1088/0957-4484/21/47/475208. Epub 2010 Oct 29.

PMID:
21030765
13.

Strong suppression of electrical noise in bilayer graphene nanodevices.

Lin YM, Avouris P.

Nano Lett. 2008 Aug;8(8):2119-25. doi: 10.1021/nl080241l. Epub 2008 Feb 26.

PMID:
18298094
14.

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.

Choi MS, Lee GH, Yu YJ, Lee DY, Lee SH, Kim P, Hone J, Yoo WJ.

Nat Commun. 2013;4:1624. doi: 10.1038/ncomms2652.

PMID:
23535645
15.

Atomically resolved orientational ordering of C60 molecules on epitaxial graphene on Cu(111).

Jung M, Shin D, Sohn SD, Kwon SY, Park N, Shin HJ.

Nanoscale. 2014 Oct 21;6(20):11835-40. doi: 10.1039/c4nr03249g. Epub 2014 Aug 29.

PMID:
25169153
16.

Polaron coupling in graphene field effect transistors on patterned self-assembled monolayer.

Yokota K, Takai K, Kudo Y, Sato Y, Enoki T.

Phys Chem Chem Phys. 2014 Mar 7;16(9):4313-9. doi: 10.1039/c3cp54669a.

PMID:
24452397
17.

Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors.

Di Bartolomeo A, Giubileo F, Santandrea S, Romeo F, Citro R, Schroeder T, Lupina G.

Nanotechnology. 2011 Jul 8;22(27):275702. doi: 10.1088/0957-4484/22/27/275702. Epub 2011 May 20.

PMID:
21597135
18.

Wrapping graphene sheets around organic wires for making memory devices.

Wang S, Manga KK, Zhao M, Bao Q, Loh KP.

Small. 2011 Aug 22;7(16):2372-8. doi: 10.1002/smll.201100426. Epub 2011 Jun 21.

PMID:
21692180
19.

Energy dissipation in graphene field-effect transistors.

Freitag M, Steiner M, Martin Y, Perebeinos V, Chen Z, Tsang JC, Avouris P.

Nano Lett. 2009 May;9(5):1883-8. doi: 10.1021/nl803883h.

PMID:
19331421
20.

Polarity and air-stability transitions in field-effect transistors based on fullerenes with different solubilizing groups.

Yu H, Cho HH, Cho CH, Kim KH, Kim DY, Kim BJ, Oh JH.

ACS Appl Mater Interfaces. 2013 Jun 12;5(11):4865-71. doi: 10.1021/am400618r. Epub 2013 May 28.

PMID:
23676780
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