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Similar articles for PubMed (Select 23786236)

1.

Generic relevance of counter charges for cation-based nanoscale resistive switching memories.

Tappertzhofen S, Valov I, Tsuruoka T, Hasegawa T, Waser R, Aono M.

ACS Nano. 2013 Jul 23;7(7):6396-402. doi: 10.1021/nn4026614. Epub 2013 Jun 24.

PMID:
23786236
2.

Resistive switching in nanogap systems on SiO2 substrates.

Yao J, Zhong L, Zhang Z, He T, Jin Z, Wheeler PJ, Natelson D, Tour JM.

Small. 2009 Dec;5(24):2910-5. doi: 10.1002/smll.200901100.

PMID:
19787676
3.

Photo-stimulated resistive switching of ZnO nanorods.

Park J, Lee S, Yong K.

Nanotechnology. 2012 Sep 28;23(38):385707. doi: 10.1088/0957-4484/23/38/385707. Epub 2012 Sep 5.

PMID:
22948083
4.

Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.

Venugopal G, Kim SJ.

J Nanosci Nanotechnol. 2012 Nov;12(11):8522-5.

PMID:
23421239
5.

CMOS compatible nanoscale nonvolatile resistance switching memory.

Jo SH, Lu W.

Nano Lett. 2008 Feb;8(2):392-7. doi: 10.1021/nl073225h. Epub 2008 Jan 25.

PMID:
18217785
6.

Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution.

Medeiros-Ribeiro G, Perner F, Carter R, Abdalla H, Pickett MD, Williams RS.

Nanotechnology. 2011 Mar 4;22(9):095702. doi: 10.1088/0957-4484/22/9/095702. Epub 2011 Jan 24.

PMID:
21258143
7.

Graphene oxide thin films for flexible nonvolatile memory applications.

Jeong HY, Kim JY, Kim JW, Hwang JO, Kim JE, Lee JY, Yoon TH, Cho BJ, Kim SO, Ruoff RS, Choi SY.

Nano Lett. 2010 Nov 10;10(11):4381-6. doi: 10.1021/nl101902k. Epub 2010 Oct 4.

PMID:
20919689
8.

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

Sohn JI, Choi SS, Morris SM, Bendall JS, Coles HJ, Hong WK, Jo G, Lee T, Welland ME.

Nano Lett. 2010 Nov 10;10(11):4316-20. doi: 10.1021/nl1013713.

PMID:
20945844
9.

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer.

Tang G, Zeng F, Chen C, Liu H, Gao S, Song C, Lin Y, Chen G, Pan F.

Nanoscale. 2013 Jan 7;5(1):422-8. doi: 10.1039/c2nr32743k. Epub 2012 Nov 27.

PMID:
23187889
10.

CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique.

Singh B, Mehta BR, Varandani D, Savu AV, Brugger J.

Nanotechnology. 2012 Dec 14;23(49):495707. doi: 10.1088/0957-4484/23/49/495707. Epub 2012 Nov 13.

PMID:
23149566
11.

Programmable resistance switching in nanoscale two-terminal devices.

Jo SH, Kim KH, Lu W.

Nano Lett. 2009 Jan;9(1):496-500. doi: 10.1021/nl803669s.

PMID:
19113891
12.

Disordered self assembled monolayer dielectric induced hysteresis in organic field effect transistors.

Padma N, Saxena V, Sudarsan V, Rava H, Sen S.

J Nanosci Nanotechnol. 2014 Jun;14(6):4418-23.

PMID:
24738406
13.

Effects of crystallization and non-lattice oxygen atoms on Cu(x)O-based resistive switching memory.

Lin CC, Wu PH, Chang YP.

J Nanosci Nanotechnol. 2013 Jan;13(1):483-6.

PMID:
23646758
14.

Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory.

Park IS, Lee JH, Lee S, Ahn J.

J Nanosci Nanotechnol. 2007 Nov;7(11):4139-42.

PMID:
18047136
15.

Self-assembly-induced formation of high-density silicon oxide memristor nanostructures on graphene and metal electrodes.

Park WI, Yoon JM, Park M, Lee J, Kim SK, Jeong JW, Kim K, Jeong HY, Jeon S, No KS, Lee JY, Jung YS.

Nano Lett. 2012 Mar 14;12(3):1235-40. doi: 10.1021/nl203597d. Epub 2012 Feb 10.

PMID:
22324809
16.

Gold-silica-gold nanosandwiches: tunable bimodal plasmonic resonators.

Dmitriev A, Pakizeh T, Käll M, Sutherland DS.

Small. 2007 Feb;3(2):294-9. No abstract available.

PMID:
17199248
17.

A nonvolatile plasmonic switch employing photochromic molecules.

Pala RA, Shimizu KT, Melosh NA, Brongersma ML.

Nano Lett. 2008 May;8(5):1506-10. doi: 10.1021/nl0808839. Epub 2008 Apr 16.

PMID:
18412401
18.

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory.

Kim S, Kim SJ, Kim KM, Lee SR, Chang M, Cho E, Kim YB, Kim CJ, Chung U-, Yoo IK.

Sci Rep. 2013;3:1680. doi: 10.1038/srep01680.

19.

A robust nanoscale biomemory device composed of recombinant azurin on hexagonally packed Au-nano array.

Yagati AK, Lee T, Min J, Choi JW.

Biosens Bioelectron. 2013 Feb 15;40(1):283-90. doi: 10.1016/j.bios.2012.07.055. Epub 2012 Aug 3.

PMID:
22884649
20.

Two-terminal nonvolatile memories based on single-walled carbon nanotubes.

Yao J, Jin Z, Zhong L, Natelson D, Tour JM.

ACS Nano. 2009 Dec 22;3(12):4122-6. doi: 10.1021/nn901263e.

PMID:
19904998
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