Display Settings:

Format
Items per page
Sort by

Send to:

Choose Destination

Results: 1 to 20 of 93

1.

Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch.

Choi BJ, Torrezan AC, Norris KJ, Miao F, Strachan JP, Zhang MX, Ohlberg DA, Kobayashi NP, Yang JJ, Williams RS.

Nano Lett. 2013 Jul 10;13(7):3213-7. doi: 10.1021/nl401283q. Epub 2013 Jun 12.

PMID:
23746124
[PubMed - in process]
2.

Purely electronic switching with high uniformity, resistance tunability, and good retention in Pt-dispersed SiO2 thin films for ReRAM.

Choi BJ, Chen AB, Yang X, Chen IW.

Adv Mater. 2011 Sep 1;23(33):3847-52. doi: 10.1002/adma.201102132. Epub 2011 Jul 21.

PMID:
24737180
[PubMed - in process]
3.

Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

Hu W, Qin N, Wu G, Lin Y, Li S, Bao D.

J Am Chem Soc. 2012 Sep 12;134(36):14658-61. doi: 10.1021/ja305681n. Epub 2012 Aug 29.

PMID:
22931305
[PubMed]
4.

Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices.

Lee SB, Yoo HK, Kim K, Lee JS, Kim YS, Sinn S, Lee D, Kang BS, Kahng B, Noh TW.

Nanotechnology. 2012 Aug 10;23(31):315202. doi: 10.1088/0957-4484/23/31/315202.

PMID:
22802159
[PubMed]
5.

Bipolar resistance switching characteristics in TiN/ZnO:Mn/Pt junctions developed for nonvolatile resistive memory application.

Yang YC, Fan B, Zeng F, Pan F.

J Nanosci Nanotechnol. 2010 Nov;10(11):7370-3.

PMID:
21137937
[PubMed]
6.

Rectifying switching characteristics of Pt/ZnO/Pt structure based resistive memory.

Wang J, Song Z, Xu K, Liu M.

J Nanosci Nanotechnol. 2010 Nov;10(11):7088-91.

PMID:
21137871
[PubMed]
7.

Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films.

Nakamura T, Homma K, Tachibana K.

Nanoscale Res Lett. 2013 Feb 15;8(1):76. doi: 10.1186/1556-276X-8-76.

PMID:
23414549
[PubMed]
Free PMC Article
8.

Multilevel resistive switching in planar graphene/SiO2 nanogap structures.

He C, Shi Z, Zhang L, Yang W, Yang R, Shi D, Zhang G.

ACS Nano. 2012 May 22;6(5):4214-21. doi: 10.1021/nn300735s. Epub 2012 Apr 27.

PMID:
22519726
[PubMed]
9.

Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films.

Chiu FC, Li PW, Chang WY.

Nanoscale Res Lett. 2012 Mar 8;7(1):178. doi: 10.1186/1556-276X-7-178.

PMID:
22401297
[PubMed]
Free PMC Article
10.

Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths.

Martínez A, Blasco J, Sanchis P, Galán JV, García-Rupérez J, Jordana E, Gautier P, Lebour Y, Hernández S, Guider R, Daldosso N, Garrido B, Fedeli JM, Pavesi L, Martí J, Spano R.

Nano Lett. 2010 Apr 14;10(4):1506-11. doi: 10.1021/nl9041017. Erratum in: Nano Lett. 2010 Jun 9;10(6):2288. Spano, Rita [added].

PMID:
20356059
[PubMed - indexed for MEDLINE]
11.

Electrically tailored resistance switching in silicon oxide.

Mehonic A, Cueff S, Wojdak M, Hudziak S, Labbé C, Rizk R, Kenyon AJ.

Nanotechnology. 2012 Nov 16;23(45):455201. doi: 10.1088/0957-4484/23/45/455201. Epub 2012 Oct 12.

PMID:
23064085
[PubMed]
12.

Dynamic-load-enabled ultra-low power multiple-state RRAM devices.

Yang X, Chen IW.

Sci Rep. 2012;2:744. doi: 10.1038/srep00744. Epub 2012 Oct 17.

PMID:
23077728
[PubMed]
Free PMC Article
13.

The role of zinc vacancies in bipolar resistance switching of Ag/ZnO/Pt memory structures.

Yalishev VSh, Yuldashev SU, Kim YS, Park BH.

Nanotechnology. 2012 Sep 21;23(37):375201. doi: 10.1088/0957-4484/23/37/375201. Epub 2012 Aug 24.

PMID:
22922356
[PubMed]
14.

High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires.

Dong H, Zhang X, Zhao D, Niu Z, Zeng Q, Li J, Cai L, Wang Y, Zhou W, Gao M, Xie S.

Nanoscale. 2012 Apr 21;4(8):2571-4. doi: 10.1039/c2nr30133d. Epub 2012 Mar 14.

PMID:
22419367
[PubMed]
15.

Electronic bipolar resistance switching in an anti-serially connected Pt/TiO2/Pt structure for improved reliability.

Kim KM, Han S, Hwang CS.

Nanotechnology. 2012 Jan 27;23(3):035201. doi: 10.1088/0957-4484/23/3/035201. Epub 2011 Dec 16.

PMID:
22173287
[PubMed]
16.

Forming-free bipolar resistive switching in nonstoichiometric ceria films.

Ismail M, Huang CY, Panda D, Hung CJ, Tsai TL, Jieng JH, Lin CA, Chand U, Rana AM, Ahmed E, Talib I, Nadeem MY, Tseng TY.

Nanoscale Res Lett. 2014 Jan 27;9(1):45. doi: 10.1186/1556-276X-9-45.

PMID:
24467984
[PubMed]
Free PMC Article
17.

Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications.

Wang Y, Liu Q, Long S, Wang W, Wang Q, Zhang M, Zhang S, Li Y, Zuo Q, Yang J, Liu M.

Nanotechnology. 2010 Jan 29;21(4):045202. doi: 10.1088/0957-4484/21/4/045202. Epub 2009 Dec 10.

PMID:
20009169
[PubMed]
18.

Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching.

Liu CY, Huang JJ, Lai CH, Lin CH.

Nanoscale Res Lett. 2013 Apr 8;8(1):156. doi: 10.1186/1556-276X-8-156.

PMID:
23566527
[PubMed]
Free PMC Article
19.

Resistance switching characteristics of solid electrolyte chalcogenide Ag(2)Se nanoparticles for flexible nonvolatile memory applications.

Jang J, Pan F, Braam K, Subramanian V.

Adv Mater. 2012 Jul 10;24(26):3573-6. doi: 10.1002/adma.201200671. Epub 2012 Jun 12.

PMID:
22688973
[PubMed - indexed for MEDLINE]
20.

Thermal conductivity measurement and interface thermal resistance estimation using SiO2 thin film.

Chien HC, Yao DJ, Huang MJ, Chang TY.

Rev Sci Instrum. 2008 May;79(5):054902. doi: 10.1063/1.2927253.

PMID:
18513085
[PubMed]

Display Settings:

Format
Items per page
Sort by

Send to:

Choose Destination

Supplemental Content

Write to the Help Desk