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Results: 1 to 20 of 159

Similar articles for PubMed (Select 23713986)

1.

Sensing behavior of atomically thin-layered MoS2 transistors.

Late DJ, Huang YK, Liu B, Acharya J, Shirodkar SN, Luo J, Yan A, Charles D, Waghmare UV, Dravid VP, Rao CN.

ACS Nano. 2013 Jun 25;7(6):4879-91. doi: 10.1021/nn400026u. Epub 2013 Jun 3.

PMID:
23713986
2.

Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers.

Elías AL, Perea-López N, Castro-Beltrán A, Berkdemir A, Lv R, Feng S, Long AD, Hayashi T, Kim YA, Endo M, Gutiérrez HR, Pradhan NR, Balicas L, Mallouk TE, López-Urías F, Terrones H, Terrones M.

ACS Nano. 2013 Jun 25;7(6):5235-42. doi: 10.1021/nn400971k. Epub 2013 May 15.

PMID:
23647141
3.

MoS2 transistors fabricated via plasma-assisted nanoprinting of few-layer MoS2 flakes into large-area arrays.

Nam H, Wi S, Rokni H, Chen M, Priessnitz G, Lu W, Liang X.

ACS Nano. 2013 Jul 23;7(7):5870-81. doi: 10.1021/nn401093u. Epub 2013 Jun 25.

PMID:
23790007
4.

Growth of large-scale and thickness-modulated MoS₂ nanosheets.

Choudhary N, Park J, Hwang JY, Choi W.

ACS Appl Mater Interfaces. 2014 Dec 10;6(23):21215-22. doi: 10.1021/am506198b. Epub 2014 Nov 26.

PMID:
25382854
5.

Photocurrent response of MoS₂ field-effect transistor by deep ultraviolet light in atmospheric and N₂ gas environments.

Khan MF, Iqbal MW, Iqbal MZ, Shehzad MA, Seo Y, Eom J.

ACS Appl Mater Interfaces. 2014 Dec 10;6(23):21645-51. doi: 10.1021/am506716a. Epub 2014 Nov 26.

PMID:
25409490
6.

Preparation and applications of mechanically exfoliated single-layer and multilayer MoS₂ and WSe₂ nanosheets.

Li H, Wu J, Yin Z, Zhang H.

Acc Chem Res. 2014 Apr 15;47(4):1067-75. doi: 10.1021/ar4002312. Epub 2014 Apr 3.

PMID:
24697842
7.

Enhanced second harmonic generation of MoS2 layers on a thin gold film.

Zeng J, Yuan M, Yuan W, Dai Q, Fan H, Lan S, Tie S.

Nanoscale. 2015 Aug 28;7(32):13547-53. doi: 10.1039/c5nr03133h. Epub 2015 Jul 23.

PMID:
26204257
8.

Charge-transfer-based gas sensing using atomic-layer MoS2.

Cho B, Hahm MG, Choi M, Yoon J, Kim AR, Lee YJ, Park SG, Kwon JD, Kim CS, Song M, Jeong Y, Nam KS, Lee S, Yoo TJ, Kang CG, Lee BH, Ko HC, Ajayan PM, Kim DH.

Sci Rep. 2015 Jan 27;5:8052. doi: 10.1038/srep08052.

9.

Surface energy engineering for tunable wettability through controlled synthesis of MoS2.

Gaur AP, Sahoo S, Ahmadi M, Dash SP, Guinel MJ, Katiyar RS.

Nano Lett. 2014 Aug 13;14(8):4314-21. doi: 10.1021/nl501106v. Epub 2014 Jul 30.

PMID:
25073904
10.

Layer number dependence of MoS2 photoconductivity using photocurrent spectral atomic force microscopic imaging.

Son Y, Wang QH, Paulson JA, Shih CJ, Rajan AG, Tvrdy K, Kim S, Alfeeli B, Braatz RD, Strano MS.

ACS Nano. 2015 Mar 24;9(3):2843-55. doi: 10.1021/nn506924j. Epub 2015 Mar 4.

PMID:
25704152
11.

Ripples and layers in ultrathin MoS2 membranes.

Brivio J, Alexander DT, Kis A.

Nano Lett. 2011 Dec 14;11(12):5148-53. doi: 10.1021/nl2022288. Epub 2011 Oct 26.

PMID:
22010987
12.

Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.

Gu W, Shen J, Ma X.

Nanoscale Res Lett. 2014 Feb 28;9(1):100. doi: 10.1186/1556-276X-9-100.

13.

Large-area atomically thin MoS2 nanosheets prepared using electrochemical exfoliation.

Liu N, Kim P, Kim JH, Ye JH, Kim S, Lee CJ.

ACS Nano. 2014 Jul 22;8(7):6902-10. doi: 10.1021/nn5016242. Epub 2014 Jun 24.

PMID:
24937086
14.

Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors.

Cho K, Kim TY, Park W, Park J, Kim D, Jang J, Jeong H, Hong S, Lee T.

Nanotechnology. 2014 Apr 18;25(15):155201. doi: 10.1088/0957-4484/25/15/155201. Epub 2014 Mar 18.

PMID:
24642746
15.

Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates.

Chan MY, Komatsu K, Li SL, Xu Y, Darmawan P, Kuramochi H, Nakaharai S, Aparecido-Ferreira A, Watanabe K, Taniguchi T, Tsukagoshi K.

Nanoscale. 2013 Oct 21;5(20):9572-6. doi: 10.1039/c3nr03220e.

PMID:
23986323
16.

Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.

Tsai MY, Tarasov A, Hesabi ZR, Taghinejad H, Campbell PM, Joiner CA, Adibi A, Vogel EM.

ACS Appl Mater Interfaces. 2015 Jun 17;7(23):12850-5. doi: 10.1021/acsami.5b02336. Epub 2015 Jun 4.

PMID:
26010011
17.

Effect of contaminations and surface preparation on the work function of single layer MoS2.

Ochedowski O, Marinov K, Scheuschner N, Poloczek A, Bussmann BK, Maultzsch J, Schleberger M.

Beilstein J Nanotechnol. 2014 Mar 13;5:291-7. doi: 10.3762/bjnano.5.32. eCollection 2014.

18.

Stabilization of 1T-MoS2 Sheets by Imidazolium Molecules in Self-Assembling Hetero-layered Nanocrystals.

Goloveshkin AS, Bushmarinov IS, Korlyukov AA, Buzin MI, Zaikovskii VI, Lenenko ND, Golub AS.

Langmuir. 2015 Aug 18;31(32):8953-60. doi: 10.1021/acs.langmuir.5b02344. Epub 2015 Aug 6.

PMID:
26225907
19.

Efficient exfoliation of MoS2 with volatile solvents and their application for humidity sensor. .

Zhang SL, Jung H, Huh JS, Yu JB, Yang WC.

J Nanosci Nanotechnol. 2014 Nov;14(11):8518-22.

PMID:
25958556
20.

Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates.

Liu KK, Zhang W, Lee YH, Lin YC, Chang MT, Su CY, Chang CS, Li H, Shi Y, Zhang H, Lai CS, Li LJ.

Nano Lett. 2012 Mar 14;12(3):1538-44. doi: 10.1021/nl2043612. Epub 2012 Mar 5.

PMID:
22369470
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