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Items: 1 to 20 of 131

1.

High-gain phototransistors based on a CVD MoS₂ monolayer.

Zhang W, Huang JK, Chen CH, Chang YH, Cheng YJ, Li LJ.

Adv Mater. 2013 Jul 5;25(25):3456-61. doi: 10.1002/adma.201301244. Epub 2013 May 23.

PMID:
23703933
2.

Single-layer MoS2 phototransistors.

Yin Z, Li H, Li H, Jiang L, Shi Y, Sun Y, Lu G, Zhang Q, Chen X, Zhang H.

ACS Nano. 2012 Jan 24;6(1):74-80. doi: 10.1021/nn2024557. Epub 2011 Dec 21.

PMID:
22165908
3.

High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared.

Choi W, Cho MY, Konar A, Lee JH, Cha GB, Hong SC, Kim S, Kim J, Jena D, Joo J, Kim S.

Adv Mater. 2012 Nov 14;24(43):5832-6. doi: 10.1002/adma.201201909. Epub 2012 Aug 20.

PMID:
22903762
4.

Hysteresis in single-layer MoS2 field effect transistors.

Late DJ, Liu B, Matte HS, Dravid VP, Rao CN.

ACS Nano. 2012 Jun 26;6(6):5635-41. doi: 10.1021/nn301572c. Epub 2012 May 23.

PMID:
22577885
5.

Single-layer MoS2 transistors.

Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A.

Nat Nanotechnol. 2011 Mar;6(3):147-50. doi: 10.1038/nnano.2010.279. Epub 2011 Jan 30.

PMID:
21278752
6.

Ultrasensitive photodetectors based on monolayer MoS2.

Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A.

Nat Nanotechnol. 2013 Jul;8(7):497-501. doi: 10.1038/nnano.2013.100. Epub 2013 Jun 9.

PMID:
23748194
7.

Selective decoration of Au nanoparticles on monolayer MoS2 single crystals.

Shi Y, Huang JK, Jin L, Hsu YT, Yu SF, Li LJ, Yang HY.

Sci Rep. 2013;3:1839. doi: 10.1038/srep01839.

8.

Synthesis of large-area MoS2 atomic layers with chemical vapor deposition.

Lee YH, Zhang XQ, Zhang W, Chang MT, Lin CT, Chang KD, Yu YC, Wang JT, Chang CS, Li LJ, Lin TW.

Adv Mater. 2012 May 2;24(17):2320-5. doi: 10.1002/adma.201104798. Epub 2012 Mar 30.

PMID:
22467187
9.

High performance molybdenum disulfide amorphous silicon heterojunction photodetector.

Esmaeili-Rad MR, Salahuddin S.

Sci Rep. 2013;3:2345. doi: 10.1038/srep02345.

10.

Nanoelectronics: Flat transistors get off the ground.

Schwierz F.

Nat Nanotechnol. 2011 Mar;6(3):135-6. doi: 10.1038/nnano.2011.26. No abstract available.

PMID:
21372836
11.

Breakdown of high-performance monolayer MoS2 transistors.

Lembke D, Kis A.

ACS Nano. 2012 Nov 27;6(11):10070-5. doi: 10.1021/nn303772b. Epub 2012 Oct 5. Erratum in: ACS Nano. 2013 Apr 23;7(4):3730.

PMID:
23039374
12.

Tunable photoluminescence of monolayer MoS₂ via chemical doping.

Mouri S, Miyauchi Y, Matsuda K.

Nano Lett. 2013;13(12):5944-8. doi: 10.1021/nl403036h. Epub 2013 Nov 18.

PMID:
24215567
13.

Low-frequency electronic noise in single-layer MoS2 transistors.

Sangwan VK, Arnold HN, Jariwala D, Marks TJ, Lauhon LJ, Hersam MC.

Nano Lett. 2013 Sep 11;13(9):4351-5. doi: 10.1021/nl402150r. Epub 2013 Aug 19.

PMID:
23944940
14.

Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures.

Zhang W, Chuu CP, Huang JK, Chen CH, Tsai ML, Chang YH, Liang CT, Chen YZ, Chueh YL, He JH, Chou MY, Li LJ.

Sci Rep. 2014 Jan 23;4:3826. doi: 10.1038/srep03826.

15.

Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2.

Kim IS, Sangwan VK, Jariwala D, Wood JD, Park S, Chen KS, Shi F, Ruiz-Zepeda F, Ponce A, Jose-Yacaman M, Dravid VP, Marks TJ, Hersam MC, Lauhon LJ.

ACS Nano. 2014 Oct 28;8(10):10551-8. doi: 10.1021/nn503988x. Epub 2014 Sep 22.

16.

Measurement of mobility in dual-gated MoS₂ transistors.

Fuhrer MS, Hone J.

Nat Nanotechnol. 2013 Mar;8(3):146-7. doi: 10.1038/nnano.2013.30. No abstract available.

PMID:
23459545
17.

Reply to 'Measurement of mobility in dual-gated MoS₂ transistors'.

Radisavljevic B, Kis A.

Nat Nanotechnol. 2013 Mar;8(3):147-8. doi: 10.1038/nnano.2013.31. No abstract available.

PMID:
23459546
18.

Electroluminescence in single layer MoS2.

Sundaram RS, Engel M, Lombardo A, Krupke R, Ferrari AC, Avouris P, Steiner M.

Nano Lett. 2013 Apr 10;13(4):1416-21. doi: 10.1021/nl400516a. Epub 2013 Mar 29.

PMID:
23514373
19.

Conducting MoS₂ nanosheets as catalysts for hydrogen evolution reaction.

Voiry D, Salehi M, Silva R, Fujita T, Chen M, Asefa T, Shenoy VB, Eda G, Chhowalla M.

Nano Lett. 2013;13(12):6222-7. doi: 10.1021/nl403661s. Epub 2013 Nov 21.

PMID:
24251828
20.

MoS2 nanosheets for top-gate nonvolatile memory transistor channel.

Lee HS, Min SW, Park MK, Lee YT, Jeon PJ, Kim JH, Ryu S, Im S.

Small. 2012 Oct 22;8(20):3111-5. doi: 10.1002/smll.201200752. Epub 2012 Jul 31. No abstract available.

PMID:
22851454
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