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Items: 1 to 20 of 117

1.

Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics.

Liu X, Liu P, Huang H, Chen C, Jin T, Zhang Y, Huang X, Jin Z, Li X, Tang Z.

Nanotechnology. 2013 Jun 21;24(24):245306. doi: 10.1088/0957-4484/24/24/245306. Epub 2013 May 23.

PMID:
23702835
2.

Growth of InAs/InP core-shell nanowires with various pure crystal structures.

Gorji Ghalamestani S, Heurlin M, Wernersson LE, Lehmann S, Dick KA.

Nanotechnology. 2012 Jul 20;23(28):285601. doi: 10.1088/0957-4484/23/28/285601. Epub 2012 Jun 21.

PMID:
22717421
3.

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Jiang X, Xiong Q, Nam S, Qian F, Li Y, Lieber CM.

Nano Lett. 2007 Oct;7(10):3214-8. Epub 2007 Sep 15.

PMID:
17867718
4.

Remote p-doping of InAs nanowires.

Li HY, Wunnicke O, Borgström MT, Immink WG, van Weert MH, Verheijen MA, Bakkers EP.

Nano Lett. 2007 May;7(5):1144-8. Epub 2007 Apr 11.

PMID:
17425372
5.

Electronic properties of core-shell nanowire resonant tunneling diodes.

Zervos M.

Nanoscale Res Lett. 2014 Sep 18;9(1):509. doi: 10.1186/1556-276X-9-509. eCollection 2014.

6.

A radio frequency single-electron transistor based on an InAs/InP heterostructure nanowire.

Nilsson HA, Duty T, Abay S, Wilson C, Wagner JB, Thelander C, Delsing P, Samuelson L.

Nano Lett. 2008 Mar;8(3):872-5. doi: 10.1021/nl0731062. Epub 2008 Feb 27.

PMID:
18302328
7.

Quantum-confinement effects in InAs-InP core-shell nanowires.

Zanolli Z, Pistol ME, Fröberg LE, Samuelson L.

J Phys Condens Matter. 2007 Jul 25;19(29):295219. doi: 10.1088/0953-8984/19/29/295219. Epub 2007 Jun 11.

PMID:
21483071
8.

Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires.

Lindgren D, Kawaguchi K, Heurlin M, Borgström MT, Pistol ME, Samuelson L, Gustafsson A.

Nanotechnology. 2013 Jun 7;24(22):225203. doi: 10.1088/0957-4484/24/22/225203. Epub 2013 May 1.

PMID:
23637013
9.

The growth and characterization of ZnO/ZnTe core-shell nanowires and the electrical properties of ZnO/ZnTe core-shell nanowire field effect transistor.

Chao HY, You SH, Lu JY, Cheng JH, Chang YH, Liang CT, Wu CT.

J Nanosci Nanotechnol. 2011 Mar;11(3):2042-6.

PMID:
21449346
10.

Electrical properties of GaSb/InAsSb core/shell nanowires.

Ganjipour B, Sepehri S, Dey AW, Tizno O, Borg BM, Dick KA, Samuelson L, Wernersson LE, Thelander C.

Nanotechnology. 2014 Oct 24;25(42):425201. doi: 10.1088/0957-4484/25/42/425201. Epub 2014 Sep 29.

PMID:
25264978
11.

Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate.

Alouane MH, Anufriev R, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C.

Nanotechnology. 2011 Oct 7;22(40):405702. doi: 10.1088/0957-4484/22/40/405702. Epub 2011 Sep 12.

PMID:
21911925
12.

Remote p-type Doping in GaSb/InAs Core-shell Nanowires.

Ning F, Tang LM, Zhang Y, Chen KQ.

Sci Rep. 2015 Jun 1;5:10813. doi: 10.1038/srep10813.

13.

A comparative study of absorption in vertically and laterally oriented InP core-shell nanowire photovoltaic devices.

Nowzari A, Heurlin M, Jain V, Storm K, Hosseinnia A, Anttu N, Borgström MT, Pettersson H, Samuelson L.

Nano Lett. 2015 Mar 11;15(3):1809-14. doi: 10.1021/nl504559g. Epub 2015 Feb 25.

PMID:
25671437
14.

Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires.

Haas F, Sladek K, Winden A, von der Ahe M, Weirich TE, Rieger T, Lüth H, Grützmacher D, Schäpers T, Hardtdegen H.

Nanotechnology. 2013 Mar 1;24(8):085603. doi: 10.1088/0957-4484/24/8/085603. Epub 2013 Feb 5.

PMID:
23385879
15.

Mechanisms of molecular beam epitaxy growth in InAs/InP nanowire heterostructures.

Haapamaki CM, Lapierre RR.

Nanotechnology. 2011 Aug 19;22(33):335602. doi: 10.1088/0957-4484/22/33/335602. Epub 2011 Jul 25.

PMID:
21788682
16.

Electrical transport in ion beam created InAs nanospikes.

Grossklaus KA, Jokisaari JR, Pan XQ, Millunchick JM.

Nanotechnology. 2012 Aug 10;23(31):315301. doi: 10.1088/0957-4484/23/31/315301. Epub 2012 Jul 13.

PMID:
22796874
17.

Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect.

Liu C, Dai L, You LP, Xu WJ, Qin GG.

Nanotechnology. 2008 Nov 19;19(46):465203. doi: 10.1088/0957-4484/19/46/465203. Epub 2008 Oct 21.

PMID:
21836237
18.

Control and understanding of kink formation in InAs-InP heterostructure nanowires.

Fahlvik Svensson S, Jeppesen S, Thelander C, Samuelson L, Linke H, Dick KA.

Nanotechnology. 2013 Aug 30;24(34):345601. doi: 10.1088/0957-4484/24/34/345601. Epub 2013 Jul 30.

PMID:
23900037
19.

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

Dionízio Moreira M, Venezuela P, Miwa RH.

Nanotechnology. 2010 Jul 16;21(28):285204. doi: 10.1088/0957-4484/21/28/285204. Epub 2010 Jun 18.

PMID:
20562482
20.

Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.

Rieger T, Luysberg M, Schäpers T, Grützmacher D, Lepsa MI.

Nano Lett. 2012 Nov 14;12(11):5559-64. doi: 10.1021/nl302502b. Epub 2012 Oct 12.

PMID:
23030380
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