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Results: 1 to 20 of 103

1.

Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits.

Tommila J, Schramm A, Hakkarainen TV, Dumitrescu M, Guina M.

Nanotechnology. 2013 Jun 14;24(23):235204. doi: 10.1088/0957-4484/24/23/235204. Epub 2013 May 15.

PMID:
23676532
[PubMed]
2.

The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs.

Tommila J, Strelow C, Schramm A, Hakkarainen TV, Dumitrescu M, Kipp T, Guina M.

Nanoscale Res Lett. 2012 Jun 19;7(1):313. doi: 10.1186/1556-276X-7-313.

PMID:
22713215
[PubMed]
Free PMC Article
3.

Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy.

Schramm A, Tommila J, Strelow C, Hakkarainen TV, Tukiainen A, Dumitrescu M, Mews A, Kipp T, Guina M.

Nanotechnology. 2012 May 4;23(17):175701. doi: 10.1088/0957-4484/23/17/175701. Epub 2012 Apr 5.

PMID:
22481170
[PubMed]
4.

Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.

Skiba-Szymanska J, Jamil A, Farrer I, Ward MB, Nicoll CA, Ellis DJ, Griffiths JP, Anderson D, Jones GA, Ritchie DA, Shields AJ.

Nanotechnology. 2011 Feb 11;22(6):065302. doi: 10.1088/0957-4484/22/6/065302. Epub 2011 Jan 7.

PMID:
21212488
[PubMed]
5.

Structural characterization of InAs quantum dot chains grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs(100).

Hakkarainen TV, Tommila J, Schramm A, Tukiainen A, Ahorinta R, Dumitrescu M, Guina M.

Nanotechnology. 2011 Jul 22;22(29):295604. doi: 10.1088/0957-4484/22/29/295604. Epub 2011 Jun 17.

PMID:
21680961
[PubMed]
6.

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

He J, Yadavalli K, Zhao Z, Li N, Hao Z, Wang KL, Jacob AP.

Nanotechnology. 2008 Nov 12;19(45):455607. doi: 10.1088/0957-4484/19/45/455607. Epub 2008 Oct 9.

PMID:
21832784
[PubMed]
7.

The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100).

Hakkarainen TV, Polojärvi V, Schramm A, Tommila J, Guina M.

Nanotechnology. 2012 Mar 23;23(11):115702. doi: 10.1088/0957-4484/23/11/115702. Epub 2012 Feb 28.

PMID:
22369789
[PubMed]
8.

Morphology and optical properties of single- and multi-layer InAs quantum dots.

Hsu CC, Hsu RQ, Wu YH.

J Electron Microsc (Tokyo). 2010 Aug;59 Suppl 1:S149-54. doi: 10.1093/jmicro/dfq053. Epub 2010 Jun 24.

PMID:
20576720
[PubMed]
9.

Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography.

Martín-Sánchez J, Alonso-González P, Herranz J, González Y, González L.

Nanotechnology. 2009 Mar 25;20(12):125302. doi: 10.1088/0957-4484/20/12/125302. Epub 2009 Mar 3.

PMID:
19420463
[PubMed]
10.

Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.

Wu J, Wang ZM, Dorogan VG, Li S, Mazur YI, Salamo GJ.

Nanoscale. 2011 Apr;3(4):1485-8. doi: 10.1039/c0nr00973c. Epub 2011 Mar 8.

PMID:
21384043
[PubMed - indexed for MEDLINE]
11.

Comparative study on InAs/InGaAs dots-in-a-well structure grown on GaAs(311) B and (100) substrates.

Wang L, Li M, Xiong M, Wang W, Gao H, Zhao L.

J Nanosci Nanotechnol. 2010 Nov;10(11):7359-61.

PMID:
21137934
[PubMed]
12.

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots.

Dai L, Bremner SP, Tan S, Wang S, Zhang G, Liu Z.

Nanoscale Res Lett. 2014 May 30;9(1):278. doi: 10.1186/1556-276X-9-278. eCollection 2014.

PMID:
24948897
[PubMed]
Free PMC Article
13.

Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate.

Bennour M, Saidi F, Bouzaïene L, Sfaxi L, Maaref H.

J Appl Phys. 2012 Jan 15;111(2):24310-243107. Epub 2012 Jan 25.

PMID:
22396623
[PubMed]
Free PMC Article
14.

Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes.

Heyn C, Klingbeil M, Strelow C, Stemmann A, Mendach S, Hansen W.

Nanoscale Res Lett. 2010 Jul 14;5(10):1633-1636.

PMID:
21076707
[PubMed]
Free PMC Article
15.

Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition.

He J, Reyner CJ, Liang BL, Nunna K, Huffaker DL, Pavarelli N, Gradkowski K, Ochalski TJ, Huyet G, Dorogan VG, Mazur YI, Salamo GJ.

Nano Lett. 2010 Aug 11;10(8):3052-6. doi: 10.1021/nl102237n.

PMID:
20698619
[PubMed]
16.

Various Quantum- and Nano-Structures by III-V Droplet Epitaxy on GaAs Substrates.

Lee J, Wang ZhM, Kim E, Kim N, Park Sh, Salamo G.

Nanoscale Res Lett. 2009 Nov 15;5(2):308-14. doi: 10.1007/s11671-009-9481-9.

PMID:
20671787
[PubMed]
Free PMC Article
17.

Formation mechanism and optical properties of InAs quantum dots on the surface of GaAs nanowires.

Yan X, Zhang X, Ren X, Lv X, Li J, Wang Q, Cai S, Huang Y.

Nano Lett. 2012 Apr 11;12(4):1851-6. doi: 10.1021/nl204204f. Epub 2012 Mar 26.

PMID:
22439825
[PubMed]
18.

Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.

Guimard D, Ishida M, Bordel D, Li L, Nishioka M, Tanaka Y, Ekawa M, Sudo H, Yamamoto T, Kondo H, Sugawara M, Arakawa Y.

Nanotechnology. 2010 Mar 12;21(10):105604. doi: 10.1088/0957-4484/21/10/105604. Epub 2010 Feb 16.

PMID:
20160334
[PubMed]
19.

InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation.

Wong PS, Liang B, Huffaker DL.

J Nanosci Nanotechnol. 2010 Mar;10(3):1537-50.

PMID:
20355542
[PubMed]
20.

InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm.

Strauss M, Höfling S, Forchel A.

Nanotechnology. 2009 Dec 16;20(50):505601. doi: 10.1088/0957-4484/20/50/505601. Epub 2009 Nov 12.

PMID:
19907066
[PubMed]

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