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Results: 1 to 20 of 111

Similar articles for PubMed (Select 23675857)

1.

Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon.

Koelling S, Richard O, Bender H, Uematsu M, Schulze A, Zschaetzsch G, Gilbert M, Vandervorst W.

Nano Lett. 2013 Jun 12;13(6):2458-62. doi: 10.1021/nl400447d. Epub 2013 May 21.

PMID:
23675857
2.

Three-dimensional doping and diffusion in nano scaled devices as studied by atom probe tomography.

Kambham AK, Kumar A, Florakis A, Vandervorst W.

Nanotechnology. 2013 Jul 12;24(27):275705. doi: 10.1088/0957-4484/24/27/275705. Epub 2013 Jun 14.

PMID:
23764804
3.

Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method.

Shimizu Y, Takamizawa H, Inoue K, Yano F, Nagai Y, Lamagna L, Mazzeo G, Perego M, Prati E.

Nanoscale. 2014 Jan 21;6(2):706-10. doi: 10.1039/c3nr03605g.

PMID:
24284778
4.

Controlled nanoscale doping of semiconductors via molecular monolayers.

Ho JC, Yerushalmi R, Jacobson ZA, Fan Z, Alley RL, Javey A.

Nat Mater. 2008 Jan;7(1):62-7. Epub 2007 Nov 11.

PMID:
17994026
5.

Release of arsenic from semiconductor wafers.

Ungers LJ, Jones JH, McIntyre AJ, McHenry CR.

Am Ind Hyg Assoc J. 1985 Aug;46(8):416-20.

PMID:
4050678
6.

Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor.

Prati E, Hori M, Guagliardo F, Ferrari G, Shinada T.

Nat Nanotechnol. 2012 Jul 1;7(7):443-7. doi: 10.1038/nnano.2012.94.

PMID:
22751223
7.

Enhancing semiconductor device performance using ordered dopant arrays.

Shinada T, Okamoto S, Kobayashi T, Ohdomari I.

Nature. 2005 Oct 20;437(7062):1128-31.

PMID:
16237438
8.

Direct observation of defect-mediated cluster nucleation.

Kaiser U, Muller DA, Grazul JL, Chuvilin A, Kawasaki M.

Nat Mater. 2002 Oct;1(2):102-5.

PMID:
12618823
9.

Imaging of arsenic Cottrell atmospheres around silicon defects by three-dimensional atom probe tomography.

Thompson K, Flaitz PL, Ronsheim P, Larson DJ, Kelly TF.

Science. 2007 Sep 7;317(5843):1370-4.

10.

Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si.

Voyles PM, Muller DA, Grazul JL, Citrin PH, Gossmann HJ.

Nature. 2002 Apr 25;416(6883):826-9.

PMID:
11976677
11.

Atomic-level 2-dimensional chemical mapping and imaging of individual dopants in a phosphor crystal.

Zhu GZ, Lazar S, Knights AP, Botton GA.

Phys Chem Chem Phys. 2013 Jul 21;15(27):11420-6. doi: 10.1039/c3cp51135a. Epub 2013 Jun 7.

PMID:
23744110
12.

Direct imaging of dopant clustering in metal-oxide nanoparticles.

Rossell MD, Ramasse QM, Findlay SD, Rechberger F, Erni R, Niederberger M.

ACS Nano. 2012 Aug 28;6(8):7077-83. doi: 10.1021/nn3021212. Epub 2012 Jul 10.

PMID:
22747340
13.

Spectroscopy of few-electron single-crystal silicon quantum dots.

Fuechsle M, Mahapatra S, Zwanenburg FA, Friesen M, Eriksson MA, Simmons MY.

Nat Nanotechnol. 2010 Jul;5(7):502-5. doi: 10.1038/nnano.2010.95. Epub 2010 May 23.

PMID:
20495552
14.

Three-dimensional atom mapping of boron in implanted silicon.

Cojocaru-Mirédin O, Cadel E, Deconihout B, Mangelinck D, Blavette D.

Ultramicroscopy. 2009 Apr;109(5):649-53. doi: 10.1016/j.ultramic.2008.09.008. Epub 2008 Oct 11.

PMID:
19026490
15.

A single-atom transistor.

Fuechsle M, Miwa JA, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg LC, Klimeck G, Simmons MY.

Nat Nanotechnol. 2012 Feb 19;7(4):242-6. doi: 10.1038/nnano.2012.21.

PMID:
22343383
16.

Detecting excitation and magnetization of individual dopants in a semiconductor.

Khajetoorians AA, Chilian B, Wiebe J, Schuwalow S, Lechermann F, Wiesendanger R.

Nature. 2010 Oct 28;467(7319):1084-7. doi: 10.1038/nature09519.

PMID:
20981095
17.

Direct observation of dopant atom diffusion in a bulk semiconductor crystal enhanced by a large size mismatch.

Ishikawa R, Mishra R, Lupini AR, Findlay SD, Taniguchi T, Pantelides ST, Pennycook SJ.

Phys Rev Lett. 2014 Oct 10;113(15):155501. Epub 2014 Oct 6.

PMID:
25375721
18.

Recrystallization and reactivation of dopant atoms in ion-implanted silicon nanowires.

Fukata N, Takiguchi R, Ishida S, Yokono S, Hishita S, Murakami K.

ACS Nano. 2012 Apr 24;6(4):3278-83. doi: 10.1021/nn300189z. Epub 2012 Apr 3.

PMID:
22458757
19.

A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium.

Scappucci G, Capellini G, Johnston B, Klesse WM, Miwa JA, Simmons MY.

Nano Lett. 2011 Jun 8;11(6):2272-9. doi: 10.1021/nl200449v. Epub 2011 May 10.

PMID:
21553900
20.

Extended defects formation in nanosecond laser-annealed ion implanted silicon.

Qiu Y, Cristiano F, Huet K, Mazzamuto F, Fisicaro G, La Magna A, Quillec M, Cherkashin N, Wang H, Duguay S, Blavette D.

Nano Lett. 2014;14(4):1769-75. doi: 10.1021/nl4042438. Epub 2014 Mar 13.

PMID:
24588318
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