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Results: 1 to 20 of 173

Similar articles for PubMed (Select 23640615)

1.

Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties.

Chiu CH, Huang CW, Chen JY, Huang YT, Hu JC, Chen LT, Hsin CL, Wu WW.

Nanoscale. 2013 Jun 7;5(11):5086-92. doi: 10.1039/c3nr33302g. Epub 2013 May 3.

PMID:
23640615
2.

Structure, growth kinetics, and ledge flow during vapor-solid-solid growth of copper-catalyzed silicon nanowires.

Wen CY, Reuter MC, Tersoff J, Stach EA, Ross FM.

Nano Lett. 2010 Feb 10;10(2):514-9. doi: 10.1021/nl903362y.

PMID:
20041666
3.

Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures.

Hsieh YH, Chiu CH, Huang CW, Chen JY, Lin WJ, Wu WW.

Nanoscale. 2015 Feb 7;7(5):1776-81. doi: 10.1039/c4nr06084a.

PMID:
25519809
4.

In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi2 in nanowires of Si.

Chou YC, Wu WW, Cheng SL, Yoo BY, Myung N, Chen LJ, Tu KN.

Nano Lett. 2008 Aug;8(8):2194-9. doi: 10.1021/nl080624j. Epub 2008 Jul 11.

PMID:
18616326
5.

The influence of surface oxide on the growth of metal/semiconductor nanowires.

Lu KC, Wu WW, Ouyang H, Lin YC, Huang Y, Wang CW, Wu ZW, Huang CW, Chen LJ, Tu KN.

Nano Lett. 2011 Jul 13;11(7):2753-8. doi: 10.1021/nl201037m. Epub 2011 Jun 9.

PMID:
21657260
6.

Real-time observation of impurity diffusion in silicon nanowires.

Holmberg VC, Collier KA, Korgel BA.

Nano Lett. 2011 Sep 14;11(9):3803-8. doi: 10.1021/nl201879u. Epub 2011 Jul 29.

PMID:
21786784
7.

Diffusion in Si(x)Ge(1-x)/Si nanowire heterostructures.

Zhang X, Kulik J, Dickey EC.

J Nanosci Nanotechnol. 2007 Feb;7(2):717-20.

PMID:
17450821
8.

Nanostructural transformation and formation of heterojunctions from Si nanowires.

Wong TL, Cheng C, Li W, Fung KK, Wang N.

ACS Nano. 2010 Oct 26;4(10):5559-64. doi: 10.1021/nn100465s.

PMID:
20845917
9.

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.

Habicht S, Zhao QT, Feste SF, Knoll L, Trellenkamp S, Ghyselen B, Mantl S.

Nanotechnology. 2010 Mar 12;21(10):105701. doi: 10.1088/0957-4484/21/10/105701. Epub 2010 Feb 15.

PMID:
20154367
10.

Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.

Lin YC, Lu KC, Wu WW, Bai J, Chen LJ, Tu KN, Huang Y.

Nano Lett. 2008 Mar;8(3):913-8. doi: 10.1021/nl073279r. Epub 2008 Feb 12.

PMID:
18266331
11.

Solution-phase synthesis of single-crystal Cu3Si nanowire arrays on diverse substrates with dual functions as high-performance field emitters and efficient anti-reflective layers.

Yuan FW, Wang CY, Li GA, Chang SH, Chu LW, Chen LJ, Tuan HY.

Nanoscale. 2013 Oct 21;5(20):9875-81. doi: 10.1039/c3nr03045h.

PMID:
23979254
12.

Measurement of local Si-nanowire growth kinetics using in situ transmission electron microscopy of heated cantilevers.

Kallesøe C, Wen CY, Mølhave K, Bøggild P, Ross FM.

Small. 2010 Sep 20;6(18):2058-64. doi: 10.1002/smll.200902187.

PMID:
20730823
13.

Ultrafast electrochemical lithiation of individual Si nanowire anodes.

Liu XH, Zhang LQ, Zhong L, Liu Y, Zheng H, Wang JW, Cho JH, Dayeh SA, Picraux ST, Sullivan JP, Mao SX, Ye ZZ, Huang JY.

Nano Lett. 2011 Jun 8;11(6):2251-8. doi: 10.1021/nl200412p. Epub 2011 May 12.

PMID:
21563798
14.

Polaronic transport and current blockades in epitaxial silicide nanowires and nanowire arrays.

Iancu V, Zhang XG, Kim TH, Menard LD, Kent PR, Woodson ME, Ramsey JM, Li AP, Weitering HH.

Nano Lett. 2013 Aug 14;13(8):3684-9. doi: 10.1021/nl401574c. Epub 2013 Aug 2.

15.

Gold catalyzed nickel disilicide formation: a new solid-liquid-solid phase growth mechanism.

Tang W, Picraux ST, Huang JY, Liu X, Tu KN, Dayeh SA.

Nano Lett. 2013;13(12):6009-15. doi: 10.1021/nl4032023. Epub 2013 Dec 2.

PMID:
24274698
16.

Silicon nanowire transistors with a channel width of 4 nm fabricated by atomic force microscope nanolithography.

Martinez J, Martínez RV, Garcia R.

Nano Lett. 2008 Nov;8(11):3636-9. doi: 10.1021/nl801599k. Epub 2008 Oct 1.

PMID:
18826289
17.

Silicon nanowire oxidation: the influence of sidewall structure and gold distribution.

Sivakov VA, Scholz R, Syrowatka F, Falk F, Gösele U, Christiansen SH.

Nanotechnology. 2009 Oct 7;20(40):405607. doi: 10.1088/0957-4484/20/40/405607. Epub 2009 Sep 8.

PMID:
19738306
18.

Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions.

Wu WW, Lu KC, Wang CW, Hsieh HY, Chen SY, Chou YC, Yu SY, Chen LJ, Tu KN.

Nano Lett. 2010 Oct 13;10(10):3984-9. doi: 10.1021/nl101842w.

PMID:
20809607
19.

Detection of spin polarized carrier in silicon nanowire with single crystal MnSi as magnetic contacts.

Lin YC, Chen Y, Shailos A, Huang Y.

Nano Lett. 2010 Jun 9;10(6):2281-7. doi: 10.1021/nl101477q.

PMID:
20499889
20.

In situ TEM creation and electrical characterization of nanowire devices.

Kallesøe C, Wen CY, Booth TJ, Hansen O, Bøggild P, Ross FM, Mølhave K.

Nano Lett. 2012 Jun 13;12(6):2965-70. doi: 10.1021/nl300704u. Epub 2012 May 14.

PMID:
22545629
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