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Items: 1 to 20 of 114

1.

Air-ring microstructure arrays for enhanced light extraction from a face-up light-emitting diode.

Kim HK, Park YJ, Kang JH, Han N, Han M, Ryu BD, Ko KB, Yang JH, Kim YT, Chandramohan S, Jeong H, Jeong MS, Hong CH.

Opt Lett. 2013 May 1;38(9):1491-3. doi: 10.1364/OL.38.001491.

PMID:
23632528
2.

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Yang YC, Sheu JK, Lee ML, Yen CH, Lai WC, Hon SJ, Ko TK.

Opt Express. 2012 Nov 5;20(23):A1019-25.

PMID:
23326851
3.

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Yang YC, Sheu JK, Lee ML, Yen CH, Lai WC, Hon SJ, Ko TK.

Opt Express. 2012 Nov 5;20 Suppl 6:A1019-25. doi: 10.1364/OE.20.0A1019.

PMID:
23187653
4.

Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays.

Kang JH, Kim HG, Chandramohan S, Kim HK, Kim HY, Ryu JH, Park YJ, Beak YS, Lee JS, Park JS, Lysak VV, Hong CH.

Opt Lett. 2012 Jan 1;37(1):88-90. doi: 10.1364/OL.37.000088.

PMID:
22212800
6.

Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays.

Jeong H, Park DJ, Lee HS, Ko YH, Yu JS, Choi SB, Lee DS, Suh EK, Jeong MS.

Nanoscale. 2014 Apr 21;6(8):4371-8. doi: 10.1039/c3nr06584g.

PMID:
24626720
7.

Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography.

Byeon KJ, Cho JY, Kim J, Park H, Lee H.

Opt Express. 2012 May 7;20(10):11423-32. doi: 10.1364/OE.20.011423.

PMID:
22565762
8.

Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes.

Lee KH, Park HJ, Kim SH, Asadirad M, Moon YT, Kwak JS, Ryou JH.

Opt Express. 2015 Aug 10;23(16):20340-9. doi: 10.1364/OE.23.020340.

PMID:
26367889
9.

Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrate.

Oh TS, Jeong H, Lee YS, Park AH, Seo TH, Kim H, Lee KJ, Jeong MS, Suh EK.

Opt Express. 2011 May 9;19(10):9385-91. doi: 10.1364/OE.19.009385.

PMID:
21643195
10.

Forming the graded-refractive-index antireflection layers on light-emitting diodes to enhance the light extraction.

Cho JY, Byeon KJ, Lee H.

Opt Lett. 2011 Aug 15;36(16):3203-5. doi: 10.1364/OL.36.003203.

PMID:
21847208
11.

Microstructured Air Cavities as High-Index Contrast Substrates with Strong Diffraction for Light-Emitting Diodes.

Moon YJ, Moon D, Jang J, Na JY, Song JH, Seo MK, Kim S, Bae D, Park EH, Park Y, Kim SK, Yoon E.

Nano Lett. 2016 May 11;16(5):3301-8. doi: 10.1021/acs.nanolett.6b00892. Epub 2016 Apr 7.

PMID:
27045458
12.

Vertical InGaN light-emitting diodes with a sapphire-face-up structure.

Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK.

Opt Express. 2012 Jan 2;20(1):A119-24.

PMID:
22379672
13.

InGaN-based light-emitting diodes with an embedded conical air-voids structure.

Huang YC, Lin CF, Chen SH, Dai JJ, Wang GM, Huang KP, Chen KT, Hsu YH.

Opt Express. 2011 Jan 3;19 Suppl 1:A57-63. doi: 10.1364/OE.19.000A57.

PMID:
21263713
14.

The fabrication of a patterned ZnO nanorod array for high brightness LEDs.

Park H, Byeon KJ, Yang KY, Cho JY, Lee H.

Nanotechnology. 2010 Sep 3;21(35):355304. doi: 10.1088/0957-4484/21/35/355304. Epub 2010 Aug 6.

PMID:
20689168
15.

Enhanced light extraction from a GaN-based green light-emitting diode with hemicylindrical linear grating structure.

Jin Y, Yang F, Li Q, Zhu Z, Zhu J, Fan S.

Opt Express. 2012 Jul 2;20(14):15818-25. doi: 10.1364/OE.20.015818.

PMID:
22772271
16.

High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask.

Cho CY, Kwon MK, Park IK, Hong SH, Kim JJ, Park SE, Kim ST, Park SJ.

Opt Express. 2011 Jul 4;19 Suppl 4:A943-8. doi: 10.1364/OE.19.00A943.

PMID:
21747565
17.

Improved light output from InGaN LEDs by laser-induced dumbbell-like air-voids.

Zhang Y, Xie H, Zheng H, Dong P, Yang H, Yi X, Wang G.

Opt Express. 2013 Dec 30;21(26):32582-8. doi: 10.1364/OE.21.032582.

PMID:
24514851
18.

GaN light emitting diodes with wing-type imbedded contacts.

Horng RH, Shen KC, Kuo YW, Wuu DS.

Opt Express. 2013 Jan 14;21 Suppl 1:A1-6. doi: 10.1364/OE.21.0000A1.

PMID:
23389261
19.

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

Chen H, Zhang Q, Chou SY.

Nanotechnology. 2015 Feb 27;26(8):085302. doi: 10.1088/0957-4484/26/8/085302. Epub 2015 Feb 3.

PMID:
25648720
20.

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.

Park MJ, Kwon KW, Kim YH, Park SH, Kwak JS.

J Nanosci Nanotechnol. 2011 May;11(5):4484-7.

PMID:
21780482
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