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Results: 1 to 20 of 146

1.

Bipolar one diode-one resistor integration for high-density resistive memory applications.

Li Y, Lv H, Liu Q, Long S, Wang M, Xie H, Zhang K, Huo Z, Liu M.

Nanoscale. 2013 Jun 7;5(11):4785-9. doi: 10.1039/c3nr33370a. Epub 2013 Apr 23.

PMID:
23612603
[PubMed]
2.

Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode.

Lin CC, Wu YH, Chang YT, Sun CE.

Nanoscale Res Lett. 2014 May 30;9(1):275. doi: 10.1186/1556-276X-9-275. eCollection 2014.

PMID:
24936165
[PubMed]
Free PMC Article
3.

Diode-less bilayer oxide (WO(x)-NbO(x)) device for cross-point resistive memory applications.

Liu X, Sadaf SM, Son M, Shin J, Park J, Lee J, Park S, Hwang H.

Nanotechnology. 2011 Nov 25;22(47):475702. doi: 10.1088/0957-4484/22/47/475702. Epub 2011 Nov 4.

PMID:
22056387
[PubMed]
4.

A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications.

Li Y, Gong Q, Li R, Jiang X.

Nanotechnology. 2014 May 9;25(18):185201. doi: 10.1088/0957-4484/25/18/185201. Epub 2014 Apr 15.

PMID:
24737150
[PubMed - in process]
5.

Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications.

Wang Y, Liu Q, Long S, Wang W, Wang Q, Zhang M, Zhang S, Li Y, Zuo Q, Yang J, Liu M.

Nanotechnology. 2010 Jan 29;21(4):045202. doi: 10.1088/0957-4484/21/4/045202. Epub 2009 Dec 10.

PMID:
20009169
[PubMed]
6.

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Li Y, Long S, Lv H, Liu Q, Wang Y, Zhang S, Lian W, Wang M, Zhang K, Xie H, Liu S, Liu M.

Nanotechnology. 2011 Jun 24;22(25):254028. doi: 10.1088/0957-4484/22/25/254028. Epub 2011 May 16.

PMID:
21572216
[PubMed]
7.

Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

Ji L, Chang YF, Fowler B, Chen YC, Tsai TM, Chang KC, Chen MC, Chang TC, Sze SM, Yu ET, Lee JC.

Nano Lett. 2014 Feb 12;14(2):813-8. doi: 10.1021/nl404160u. Epub 2013 Dec 30.

PMID:
24369783
[PubMed - in process]
8.

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.

Jana D, Maikap S, Prakash A, Chen YY, Chiu HC, Yang JR.

Nanoscale Res Lett. 2014 Jan 8;9(1):12. doi: 10.1186/1556-276X-9-12.

PMID:
24400888
[PubMed]
Free PMC Article
9.

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.

Rahaman SZ, Maikap S, Tien TC, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ.

Nanoscale Res Lett. 2012 Jun 26;7(1):345. doi: 10.1186/1556-276X-7-345.

PMID:
22734564
[PubMed]
Free PMC Article
10.

A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.

Park WY, Kim GH, Seok JY, Kim KM, Song SJ, Lee MH, Hwang CS.

Nanotechnology. 2010 May 14;21(19):195201. doi: 10.1088/0957-4484/21/19/195201. Epub 2010 Apr 19.

PMID:
20400821
[PubMed]
11.

Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories.

Rahaman SZ, Maikap S.

Nanoscale Res Lett. 2013 Dec 5;8(1):509. doi: 10.1186/1556-276X-8-509.

PMID:
24305116
[PubMed]
Free PMC Article
12.

Nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires.

Oka K, Yanagida T, Nagashima K, Tanaka H, Kawai T.

J Am Chem Soc. 2009 Mar 18;131(10):3434-5. doi: 10.1021/ja8089922.

PMID:
19228063
[PubMed]
13.

High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory.

Banerjee W, Lu N, Li L, Sun P, Liu Q, Lv H, Long S, Liu M.

Nanoscale. 2014 Dec 10. [Epub ahead of print]

PMID:
25491764
[PubMed - as supplied by publisher]
14.

Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.

Shuai Y, Ou X, Luo W, Mücklich A, Bürger D, Zhou S, Wu C, Chen Y, Zhang W, Helm M, Mikolajick T, Schmidt OG, Schmidt H.

Sci Rep. 2013;3:2208. doi: 10.1038/srep02208.

PMID:
23860408
[PubMed]
Free PMC Article
15.

TaOx-based resistive switching memories: prospective and challenges.

Prakash A, Jana D, Maikap S.

Nanoscale Res Lett. 2013 Oct 9;8(1):418. doi: 10.1186/1556-276X-8-418.

PMID:
24107610
[PubMed]
Free PMC Article
16.

Bipolar resistance switching characteristics in TiN/ZnO:Mn/Pt junctions developed for nonvolatile resistive memory application.

Yang YC, Fan B, Zeng F, Pan F.

J Nanosci Nanotechnol. 2010 Nov;10(11):7370-3.

PMID:
21137937
[PubMed]
17.

Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

Ji Y, Zeigler DF, Lee DS, Choi H, Jen AK, Ko HC, Kim TW.

Nat Commun. 2013;4:2707. doi: 10.1038/ncomms3707.

PMID:
24176930
[PubMed]
18.

Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure.

Maikap S, Jana D, Dutta M, Prakash A.

Nanoscale Res Lett. 2014 Jun 10;9(1):292. doi: 10.1186/1556-276X-9-292. eCollection 2014.

PMID:
24982604
[PubMed]
Free PMC Article
19.

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Yu S, Chen HY, Gao B, Kang J, Wong HS.

ACS Nano. 2013 Mar 26;7(3):2320-5. doi: 10.1021/nn305510u. Epub 2013 Feb 19.

PMID:
23411406
[PubMed]
20.

Influences of electrode materials on the resistive memory switching properties of ZnOxS1-x:Mn thin films.

Han Y, Chung I, Park S, Cho K, Kim S.

J Nanosci Nanotechnol. 2013 Sep;13(9):6208-11.

PMID:
24205630
[PubMed]
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