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Items: 1 to 20 of 239

1.

Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating.

Perera MM, Lin MW, Chuang HJ, Chamlagain BP, Wang C, Tan X, Cheng MM, Tománek D, Zhou Z.

ACS Nano. 2013 May 28;7(5):4449-58. doi: 10.1021/nn401053g. Epub 2013 Apr 23.

PMID:
23590723
2.

Field effect transistors with current saturation and voltage gain in ultrathin ReS2.

Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK.

ACS Nano. 2015 Jan 27;9(1):363-70. doi: 10.1021/nn505354a. Epub 2014 Dec 24.

PMID:
25514177
3.

High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts.

Chuang HJ, Tan X, Ghimire NJ, Perera MM, Chamlagain B, Cheng MM, Yan J, Mandrus D, Tománek D, Zhou Z.

Nano Lett. 2014 Jun 11;14(6):3594-601. doi: 10.1021/nl501275p. Epub 2014 May 22.

PMID:
24844426
4.

Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.

Min SW, Lee HS, Choi HJ, Park MK, Nam T, Kim H, Ryu S, Im S.

Nanoscale. 2013 Jan 21;5(2):548-51. doi: 10.1039/c2nr33443g. Epub 2012 Dec 12.

PMID:
23233087
5.

Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions.

Tian H, Tan Z, Wu C, Wang X, Mohammad MA, Xie D, Yang Y, Wang J, Li LJ, Xu J, Ren TL.

Sci Rep. 2014 Aug 11;4:5951. doi: 10.1038/srep05951.

6.

Ambipolar phosphorene field effect transistor.

Das S, Demarteau M, Roelofs A.

ACS Nano. 2014 Nov 25;8(11):11730-8. doi: 10.1021/nn505868h. Epub 2014 Oct 23.

PMID:
25329532
7.

Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.

Lee HS, Baik SS, Lee K, Min SW, Jeon PJ, Kim JS, Choi K, Choi HJ, Kim JH, Im S.

ACS Nano. 2015 Aug 25;9(8):8312-20. doi: 10.1021/acsnano.5b02785. Epub 2015 Jul 21.

PMID:
26169189
8.

Ambipolar MoS2 thin flake transistors.

Zhang Y, Ye J, Matsuhashi Y, Iwasa Y.

Nano Lett. 2012 Mar 14;12(3):1136-40. doi: 10.1021/nl2021575. Epub 2012 Feb 10.

PMID:
22276648
9.

Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors.

Liu W, Sarkar D, Kang J, Cao W, Banerjee K.

ACS Nano. 2015 Aug 25;9(8):7904-12. doi: 10.1021/nn506512j. Epub 2015 Aug 3.

PMID:
26039221
10.

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT.

Zhou C, Wang X, Raju S, Lin Z, Villaroman D, Huang B, Chan HL, Chan M, Chai Y.

Nanoscale. 2015 May 21;7(19):8695-700. doi: 10.1039/c5nr01072a.

PMID:
25907959
11.

Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate.

Salvatore GA, Münzenrieder N, Barraud C, Petti L, Zysset C, Büthe L, Ensslin K, Tröster G.

ACS Nano. 2013 Oct 22;7(10):8809-15. doi: 10.1021/nn403248y. Epub 2013 Sep 9.

PMID:
23991756
12.

Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.

Yoon J, Park W, Bae GY, Kim Y, Jang HS, Hyun Y, Lim SK, Kahng YH, Hong WK, Lee BH, Ko HC.

Small. 2013 Oct 11;9(19):3295-300. doi: 10.1002/smll.201300134. Epub 2013 Feb 18.

PMID:
23420782
13.

Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.

Gu W, Shen J, Ma X.

Nanoscale Res Lett. 2014 Feb 28;9(1):100. doi: 10.1186/1556-276X-9-100.

14.

Field-effect transistors based on few-layered α-MoTe(2).

Pradhan NR, Rhodes D, Feng S, Xin Y, Memaran S, Moon BH, Terrones H, Terrones M, Balicas L.

ACS Nano. 2014 Jun 24;8(6):5911-20. doi: 10.1021/nn501013c. Epub 2014 Jun 4.

PMID:
24878323
15.

Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility.

Yang R, Wang Z, Feng PX.

Nanoscale. 2014 Nov 7;6(21):12383-90. doi: 10.1039/c4nr03472d.

PMID:
25219778
16.

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

Kappera R, Voiry D, Yalcin SE, Branch B, Gupta G, Mohite AD, Chhowalla M.

Nat Mater. 2014 Dec;13(12):1128-34. doi: 10.1038/nmat4080. Epub 2014 Aug 31.

PMID:
25173581
17.

Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric.

Opoku C, Hoettges KF, Hughes MP, Stolojan V, Silva SR, Shkunov M.

Nanotechnology. 2013 Oct 11;24(40):405203. doi: 10.1088/0957-4484/24/40/405203. Epub 2013 Sep 12.

PMID:
24029562
18.

Ion-dependent gate dielectric characteristics of ion-conducting SiO(2) solid-electrolytes in oxide field-effect transistors.

Sun J, Qian C, Huang W, Yang J, Gao Y.

Phys Chem Chem Phys. 2014 Apr 28;16(16):7455-60. doi: 10.1039/c3cp55056g.

PMID:
24626786
19.

Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS₂.

Ponomarev E, Gutiérrez-Lezama I, Ubrig N, Morpurgo AF.

Nano Lett. 2015 Dec 9;15(12):8289-94. doi: 10.1021/acs.nanolett.5b03885. Epub 2015 Nov 30.

PMID:
26594892
20.

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.

Kim S, Konar A, Hwang WS, Lee JH, Lee J, Yang J, Jung C, Kim H, Yoo JB, Choi JY, Jin YW, Lee SY, Jena D, Choi W, Kim K.

Nat Commun. 2012;3:1011. doi: 10.1038/ncomms2018.

PMID:
22910357
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