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Items: 1 to 20 of 109

1.

Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments.

Tsai DS, Liu KK, Lien DH, Tsai ML, Kang CF, Lin CA, Li LJ, He JH.

ACS Nano. 2013 May 28;7(5):3905-11. doi: 10.1021/nn305301b. Epub 2013 Apr 22.

PMID:
23590667
2.

Self-powered broadband, high-detectivity and ultrafast photodetectors based on Pd-MoS2/Si heterojunctions.

Hao LZ, Gao W, Liu YJ, Liu YM, Han ZD, Xue QZ, Zhu J.

Phys Chem Chem Phys. 2016 Jan 14;18(2):1131-9. doi: 10.1039/c5cp05642j.

PMID:
26660712
3.

Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures.

Zhang W, Chuu CP, Huang JK, Chen CH, Tsai ML, Chang YH, Liang CT, Chen YZ, Chueh YL, He JH, Chou MY, Li LJ.

Sci Rep. 2014 Jan 23;4:3826. doi: 10.1038/srep03826.

4.

Solar-blind photodetectors for harsh electronics.

Tsai DS, Lien WC, Lien DH, Chen KM, Tsai ML, Senesky DG, Yu YC, Pisano AP, He JH.

Sci Rep. 2013;3:2628. doi: 10.1038/srep02628.

5.

Photosensitivity Study of Metal-Semiconductor-Metal Photodetector Based on Chemical Vapor Deposited Monolayer MoS2.

Le CT, Senthilkumar V, Kim YS.

J Nanosci Nanotechnol. 2015 Oct;15(10):8133-8.

PMID:
26726475
6.

Hot Electron-Based Near-Infrared Photodetection Using Bilayer MoS2.

Wang W, Klots A, Prasai D, Yang Y, Bolotin KI, Valentine J.

Nano Lett. 2015 Nov 11;15(11):7440-4. doi: 10.1021/acs.nanolett.5b02866. Epub 2015 Oct 6.

PMID:
26426510
7.

Highly responsive MoS2 photodetectors enhanced by graphene quantum dots.

Chen C, Qiao H, Lin S, Man Luk C, Liu Y, Xu Z, Song J, Xue Y, Li D, Yuan J, Yu W, Pan C, Ping Lau S, Bao Q.

Sci Rep. 2015 Jul 3;5:11830. doi: 10.1038/srep11830.

8.

Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction.

Vabbina P, Choudhary N, Chowdhury AA, Sinha R, Karabiyik M, Das S, Choi W, Pala N.

ACS Appl Mater Interfaces. 2015 Jul 22;7(28):15206-13. doi: 10.1021/acsami.5b00887. Epub 2015 Jul 13.

PMID:
26148017
9.

Ultra-broadband and high response of the Bi2Te3-Si heterojunction and its application as a photodetector at room temperature in harsh working environments.

Yao J, Shao J, Wang Y, Zhao Z, Yang G.

Nanoscale. 2015 Aug 7;7(29):12535-41. doi: 10.1039/c5nr02953h. Epub 2015 Jul 3.

PMID:
26138000
10.

Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors.

Buscema M, Groenendijk DJ, Blanter SI, Steele GA, van der Zant HS, Castellanos-Gomez A.

Nano Lett. 2014 Jun 11;14(6):3347-52. doi: 10.1021/nl5008085. Epub 2014 May 13.

PMID:
24821381
11.

Ultrasensitive and Broadband MoSâ‚‚ Photodetector Driven by Ferroelectrics.

Wang X, Wang P, Wang J, Hu W, Zhou X, Guo N, Huang H, Sun S, Shen H, Lin T, Tang M, Liao L, Jiang A, Sun J, Meng X, Chen X, Lu W, Chu J.

Adv Mater. 2015 Nov;27(42):6575-81. doi: 10.1002/adma.201503340. Epub 2015 Sep 16.

PMID:
26376198
12.

Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors.

Cao Y, Cai K, Hu P, Zhao L, Yan T, Luo W, Zhang X, Wu X, Wang K, Zheng H.

Sci Rep. 2015 Jan 30;5:8130. doi: 10.1038/srep08130.

13.

High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors.

De Fazio D, Goykhman I, Yoon D, Bruna M, Eiden A, Milana S, Sassi U, Barbone M, Dumcenco D, Marinov K, Kis A, Ferrari AC.

ACS Nano. 2016 Sep 14. [Epub ahead of print]

PMID:
27537529
14.

Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films.

Yu Y, Li C, Liu Y, Su L, Zhang Y, Cao L.

Sci Rep. 2013;3:1866. doi: 10.1038/srep01866.

15.

High responsivity and gate tunable graphene-MoS2 hybrid phototransistor.

Xu H, Wu J, Feng Q, Mao N, Wang C, Zhang J.

Small. 2014 Jun 12;10(11):2300-6. doi: 10.1002/smll.201303670. Epub 2014 Mar 24.

PMID:
24664627
16.

High performance and bendable few-layered InSe photodetectors with broad spectral response.

Tamalampudi SR, Lu YY, Kumar U R, Sankar R, Liao CD, Moorthy B K, Cheng CH, Chou FC, Chen YT.

Nano Lett. 2014 May 14;14(5):2800-6. doi: 10.1021/nl500817g. Epub 2014 Apr 21.

PMID:
24742243
17.

Preparation of MoS2-MoO3 hybrid nanomaterials for light-emitting diodes.

Yin Z, Zhang X, Cai Y, Chen J, Wong JI, Tay YY, Chai J, Wu J, Zeng Z, Zheng B, Yang HY, Zhang H.

Angew Chem Int Ed Engl. 2014 Nov 10;53(46):12560-5. doi: 10.1002/anie.201402935. Epub 2014 Jul 22.

PMID:
25047022
18.

All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity.

Liu X, Gu L, Zhang Q, Wu J, Long Y, Fan Z.

Nat Commun. 2014 Jun 5;5:4007. doi: 10.1038/ncomms5007.

19.

Ultra-high-responsivity broadband detection of Si metal-semiconductor-metal Schottky photodetectors improved by ZnO nanorod arrays.

Tsai DS, Lin CA, Lien WC, Chang HC, Wang YL, He JH.

ACS Nano. 2011 Oct 25;5(10):7748-53. doi: 10.1021/nn203357e. Epub 2011 Oct 3.

PMID:
21942706
20.

High-performance graphene-quantum-dot photodetectors.

Kim CO, Hwang SW, Kim S, Shin DH, Kang SS, Kim JM, Jang CW, Kim JH, Lee KW, Choi SH, Hwang E.

Sci Rep. 2014 Jul 7;4:5603. doi: 10.1038/srep05603.

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