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Items: 1 to 20 of 162

1.

Long single ZnO nanowire for logic and memory circuits: NOT, NAND, NOR gate, and SRAM.

Lee YT, Ali Raza SR, Jeon PJ, Ha R, Choi HJ, Im S.

Nanoscale. 2013 May 21;5(10):4181-5. doi: 10.1039/c3nr01015e.

PMID:
23584636
2.

NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers.

Yeom D, Keem K, Kang J, Jeong DY, Yoon C, Kim D, Kim S.

Nanotechnology. 2008 Jul 2;19(26):265202. doi: 10.1088/0957-4484/19/26/265202. Epub 2008 May 19.

PMID:
21828674
3.

Direct-write fabrication of a nanoscale digital logic element on a single nanowire.

Roy S, Gao Z.

Nanotechnology. 2010 Jun 18;21(24):245306. doi: 10.1088/0957-4484/21/24/245306. Epub 2010 May 25.

PMID:
20498519
4.

ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles.

Yeom D, Kang J, Yoon C, Park B, Jeong DY, Koh EK, Kim S.

J Nanosci Nanotechnol. 2009 May;9(5):3256-60.

PMID:
19453000
5.

Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics.

Ju S, Lee K, Janes DB, Yoon MH, Facchetti A, Marks TJ.

Nano Lett. 2005 Nov;5(11):2281-6.

PMID:
16277468
6.

ZnO nanowire-based nonvolatile memory devices with Al2O3 layers as storage nodes.

Keem K, Kang J, Yoon C, Yeom D, Jeong DY, Park B, Park J, Kim S.

J Nanosci Nanotechnol. 2009 Jul;9(7):4240-3.

PMID:
19916437
7.

High-performance logic circuits constructed on single CdS nanowires.

Ma RM, Dai L, Huo HB, Xu WJ, Qin GG.

Nano Lett. 2007 Nov;7(11):3300-4. Epub 2007 Oct 13.

PMID:
17935372
8.

Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

Van NH, Lee JH, Whang D, Kang DJ.

Nanoscale. 2016 Jun 9;8(23):12022-8. doi: 10.1039/c6nr01040g.

PMID:
27240692
9.

Vertically integrated logic circuits constructed using ZnO-nanowire-based field-effect transistors on plastic substrates.

Kang J, Moon T, Jeon Y, Kim H, Kim S.

J Nanosci Nanotechnol. 2013 May;13(5):3526-8.

PMID:
23858894
10.

Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching.

Kim JS, Jeon PJ, Lee J, Choi K, Lee HS, Cho Y, Lee YT, Hwang do K, Im S.

Nano Lett. 2015 Sep 9;15(9):5778-83. doi: 10.1021/acs.nanolett.5b01746. Epub 2015 Aug 17.

PMID:
26274095
11.

Molybdenum disulfide nanoflake-zinc oxide nanowire hybrid photoinverter.

Hosseini Shokouh SH, Pezeshki A, Ali Raza SR, Choi K, Min SW, Jeon PJ, Lee HS, Im S.

ACS Nano. 2014 May 27;8(5):5174-81. doi: 10.1021/nn501230v. Epub 2014 Apr 21.

PMID:
24717126
12.

Complementary symmetry nanowire logic circuits: experimental demonstrations and in silico optimizations.

Sheriff BA, Wang D, Heath JR, Kurtin JN.

ACS Nano. 2008 Sep 23;2(9):1789-98. doi: 10.1021/nn800025q.

PMID:
19206417
13.

Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors.

Keem K, Jeong DY, Kim S, Lee MS, Yeo IS, Chung UI, Moon JT.

Nano Lett. 2006 Jul;6(7):1454-8.

PMID:
16834428
14.
15.

Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

Hosseini Shokouh SH, Raza SR, Lee HS, Im S.

Phys Chem Chem Phys. 2014 Aug 21;16(31):16367-72. doi: 10.1039/c4cp01266f.

PMID:
24985947
16.

Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors.

Choe M, Park W, Kang JW, Jeong S, Hong WK, Lee BH, Park SJ, Lee T.

Nanotechnology. 2012 Dec 7;23(48):485201. doi: 10.1088/0957-4484/23/48/485201. Epub 2012 Nov 6.

PMID:
23128783
17.

Top-gate ZnO nanowire transistors and integrated circuits with ultrathin self-assembled monolayer gate dielectric.

Kälblein D, Weitz RT, Böttcher HJ, Ante F, Zschieschang U, Kern K, Klauk H.

Nano Lett. 2011 Dec 14;11(12):5309-15. doi: 10.1021/nl202767h. Epub 2011 Oct 26.

PMID:
22029286
18.

Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric.

Opoku C, Hoettges KF, Hughes MP, Stolojan V, Silva SR, Shkunov M.

Nanotechnology. 2013 Oct 11;24(40):405203. doi: 10.1088/0957-4484/24/40/405203. Epub 2013 Sep 12.

PMID:
24029562
19.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

Van NH, Lee JH, Sohn JI, Cha SN, Whang D, Kim JM, Kang DJ.

Nanoscale. 2014 May 21;6(10):5479-83. doi: 10.1039/c3nr06690h.

PMID:
24727896
20.

Single ZnO nanowire based high-performance field effect transistors (FETs).

Park YK, Umar A, Kim JS, Yang HY, Lee JS, Hahn YB.

J Nanosci Nanotechnol. 2009 Oct;9(10):5839-44.

PMID:
19908462
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