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Items: 1 to 20 of 159

1.

Low-temperature metal-oxide thin-film transistors formed by directly photopatternable and combustible solution synthesis.

Rim YS, Lim HS, Kim HJ.

ACS Appl Mater Interfaces. 2013 May;5(9):3565-71. doi: 10.1021/am302722h. Epub 2013 Apr 16.

PMID:
23534400
2.
3.

Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.

Heo JS, Jo JW, Kang J, Jeong CY, Jeong HY, Kim SK, Kim K, Kwon HI, Kim J, Kim YH, Kim MG, Park SK.

ACS Appl Mater Interfaces. 2016 Apr 27;8(16):10403-12. doi: 10.1021/acsami.5b12819. Epub 2016 Apr 12.

PMID:
27035796
4.

Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters.

Jeong YJ, An TK, Yun DJ, Kim LH, Park S, Kim Y, Nam S, Lee KH, Kim SH, Jang J, Park CE.

ACS Appl Mater Interfaces. 2016 Mar 2;8(8):5499-508. doi: 10.1021/acsami.6b00259. Epub 2016 Feb 16.

PMID:
26840992
5.

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

Hu W, Zou L, Chen X, Qin N, Li S, Bao D.

ACS Appl Mater Interfaces. 2014 Apr 9;6(7):5012-7. doi: 10.1021/am500048y. Epub 2014 Mar 25.

PMID:
24635893
6.

Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition.

Kim JH, Rim YS, Kim HJ.

ACS Appl Mater Interfaces. 2014 Apr 9;6(7):4819-22. doi: 10.1021/am405712m. Epub 2014 Mar 24.

PMID:
24611468
7.

Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping.

Jeong SK, Kim MH, Lee SY, Seo H, Choi DK.

Nanoscale Res Lett. 2014 Nov 18;9(1):619. doi: 10.1186/1556-276X-9-619. eCollection 2014.

8.

Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.

Park JH, Oh JY, Han SW, Lee TI, Baik HK.

ACS Appl Mater Interfaces. 2015 Mar 4;7(8):4494-503. doi: 10.1021/acsami.5b00036. Epub 2015 Feb 19.

PMID:
25664940
9.

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Liu A, Liu GX, Zhu HH, Xu F, Fortunato E, Martins R, Shan FK.

ACS Appl Mater Interfaces. 2014 Oct 22;6(20):17364-9. doi: 10.1021/am505602w. Epub 2014 Oct 9.

PMID:
25285983
10.

Exploratory combustion synthesis: amorphous indium yttrium oxide for thin-film transistors.

Hennek JW, Kim MG, Kanatzidis MG, Facchetti A, Marks TJ.

J Am Chem Soc. 2012 Jun 13;134(23):9593-6. doi: 10.1021/ja303589v. Epub 2012 Jun 1.

PMID:
22625409
11.

Low-cost label-free electrical detection of artificial DNA nanostructures using solution-processed oxide thin-film transistors.

Kim SJ, Jung J, Lee KW, Yoon DH, Jung TS, Dugasani SR, Park SH, Kim HJ.

ACS Appl Mater Interfaces. 2013 Nov 13;5(21):10715-20. doi: 10.1021/am402857w. Epub 2013 Oct 16.

PMID:
24074004
12.

Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors.

Jung SW, Chae SS, Park JH, Oh JY, Bhang SH, Baik HK, Lee TI.

ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7205-11. doi: 10.1021/acsami.5b10847. Epub 2016 Mar 8.

PMID:
26919321
13.

Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

Lim C, Oh JY, Koo JB, Park CW, Jung SW, Na BS, Chu HY.

J Nanosci Nanotechnol. 2014 Nov;14(11):8665-70.

PMID:
25958581
14.

Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.

Yu X, Zhou N, Smith J, Lin H, Stallings K, Yu J, Marks TJ, Facchetti A.

ACS Appl Mater Interfaces. 2013 Aug 28;5(16):7983-8. doi: 10.1021/am402065k. Epub 2013 Aug 7.

PMID:
23876148
15.

Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric.

Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Baik HK.

ACS Appl Mater Interfaces. 2013 Jan 23;5(2):410-7. doi: 10.1021/am3022625. Epub 2013 Jan 8.

PMID:
23267443
16.

Low-temperature, high-performance, solution-processed indium oxide thin-film transistors.

Han SY, Herman GS, Chang CH.

J Am Chem Soc. 2011 Apr 13;133(14):5166-9. doi: 10.1021/ja104864j. Epub 2011 Mar 18.

PMID:
21417268
17.

Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors.

Lee KH, Park JH, Yoo YB, Jang WS, Oh JY, Chae SS, Moon KJ, Myoung JM, Baik HK.

ACS Appl Mater Interfaces. 2013 Apr 10;5(7):2585-92. doi: 10.1021/am3032629. Epub 2013 Mar 19.

PMID:
23461268
18.

Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.

Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Lee HW, Han SW, Baik HK.

ACS Appl Mater Interfaces. 2013 Aug 28;5(16):8067-75. doi: 10.1021/am402153g. Epub 2013 Aug 8.

PMID:
23883390
19.

Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.

Plassmeyer PN, Archila K, Wager JF, Page CJ.

ACS Appl Mater Interfaces. 2015 Jan 28;7(3):1678-84. doi: 10.1021/am507271e. Epub 2015 Jan 12.

PMID:
25532438
20.

Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature.

Seo JS, Jeon JH, Hwang YH, Park H, Ryu M, Park SH, Bae BS.

Sci Rep. 2013;3:2085. doi: 10.1038/srep02085.

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