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Items: 1 to 20 of 82

1.

Large resistive switching in ferroelectric BiFeO₃ nano-island based switchable diodes.

Hong S, Choi T, Jeon JH, Kim Y, Lee H, Joo HY, Hwang I, Kim JS, Kang SO, Kalinin SV, Park BH.

Adv Mater. 2013 Apr 24;25(16):2339-43. doi: 10.1002/adma.201204839. Epub 2013 Feb 28. No abstract available.

PMID:
23447446
2.

Reliable polarization switching of BiFeO3.

Baek SH, Eom CB.

Philos Trans A Math Phys Eng Sci. 2012 Oct 28;370(1977):4872-89. doi: 10.1098/rsta.2012.0197.

PMID:
22987033
3.

Room-temperature ferroelectric resistive switching in ultrathin Pb(Zr 0.2 Ti 0.8)O3 films.

Pantel D, Goetze S, Hesse D, Alexe M.

ACS Nano. 2011 Jul 26;5(7):6032-8. doi: 10.1021/nn2018528. Epub 2011 Jun 23. Erratum in: ACS Nano. 2011 Aug 23;5(8):6764.

PMID:
21682334
4.

Emerging memories: resistive switching mechanisms and current status.

Jeong DS, Thomas R, Katiyar RS, Scott JF, Kohlstedt H, Petraru A, Hwang CS.

Rep Prog Phys. 2012 Jul;75(7):076502. doi: 10.1088/0034-4885/75/7/076502. Epub 2012 Jun 28.

PMID:
22790779
5.

Domain dynamics during ferroelectric switching.

Nelson CT, Gao P, Jokisaari JR, Heikes C, Adamo C, Melville A, Baek SH, Folkman CM, Winchester B, Gu Y, Liu Y, Zhang K, Wang E, Li J, Chen LQ, Eom CB, Schlom DG, Pan X.

Science. 2011 Nov 18;334(6058):968-71. doi: 10.1126/science.1206980.

6.

Local electrical conduction in polycrystalline La-doped BiFeO₃ thin films.

Zhou MX, Chen B, Sun HB, Wan JG, Li ZW, Liu JM, Song FQ, Wang GH.

Nanotechnology. 2013 Jun 7;24(22):225702. doi: 10.1088/0957-4484/24/22/225702. Epub 2013 May 1.

PMID:
23637078
7.

One-dimensional multiferroic bismuth ferrite fibers obtained by electrospinning techniques.

Baji A, Mai YW, Li Q, Wong SC, Liu Y, Yao QW.

Nanotechnology. 2011 Jun 10;22(23):235702. doi: 10.1088/0957-4484/22/23/235702. Epub 2011 Apr 11.

PMID:
21483046
8.

Organic non-volatile memories from ferroelectric phase-separated blends.

Asadi K, de Leeuw DM, de Boer B, Blom PW.

Nat Mater. 2008 Jul;7(7):547-50. doi: 10.1038/nmat2207. Epub 2008 Jun 15.

PMID:
18552851
9.

Nanoscale polarization switching mechanisms in multiferroic BiFeO₃ thin films.

Béa H, Ziegler B, Bibes M, Barthélémy A, Paruch P.

J Phys Condens Matter. 2011 Apr 13;23(14):142201. doi: 10.1088/0953-8984/23/14/142201. Epub 2011 Mar 18.

PMID:
21422508
10.

Giant tunnel electroresistance for non-destructive readout of ferroelectric states.

Garcia V, Fusil S, Bouzehouane K, Enouz-Vedrenne S, Mathur ND, Barthélémy A, Bibes M.

Nature. 2009 Jul 2;460(7251):81-4. doi: 10.1038/nature08128. Epub 2009 May 31.

PMID:
19483675
11.

Direct observation of ferroelectric domain switching in varying electric field regimes using in situ TEM.

Winkler CR, Damodaran AR, Karthik J, Martin LW, Taheri ML.

Micron. 2012 Nov;43(11):1121-6. doi: 10.1016/j.micron.2012.02.009. Epub 2012 Mar 8.

PMID:
22459251
12.

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots.

Banerjee W, Maikap S, Lai CS, Chen YY, Tien TC, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ, Yang JR.

Nanoscale Res Lett. 2012 Mar 22;7(1):194. doi: 10.1186/1556-276X-7-194.

13.

Defect control for polarization switching in BiFeO₃ single crystals.

Chishima Y, Noguchi Y, Kitanaka Y, Miyayama M.

IEEE Trans Ultrason Ferroelectr Freq Control. 2010 Oct;57(10):2233-6. doi: 10.1109/TUFFC.2010.1683.

PMID:
20889410
14.

Ferroelectric control of magnetic anisotropy.

Mardana A, Ducharme S, Adenwalla S.

Nano Lett. 2011 Sep 14;11(9):3862-7. doi: 10.1021/nl201965r. Epub 2011 Aug 11.

PMID:
21823660
15.

Ferroelectric tunnel memristor.

Kim DJ, Lu H, Ryu S, Bark CW, Eom CB, Tsymbal EY, Gruverman A.

Nano Lett. 2012 Nov 14;12(11):5697-702. doi: 10.1021/nl302912t. Epub 2012 Oct 11.

PMID:
23039785
16.

Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching.

Liu CY, Huang JJ, Lai CH, Lin CH.

Nanoscale Res Lett. 2013 Apr 8;8(1):156. doi: 10.1186/1556-276X-8-156.

17.

Magnetic control of large room-temperature polarization.

Kumar A, Sharma GL, Katiyar RS, Pirc R, Blinc R, Scott JF.

J Phys Condens Matter. 2009 Sep 23;21(38):382204. doi: 10.1088/0953-8984/21/38/382204. Epub 2009 Aug 27.

PMID:
21832364
18.

A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory.

Kim GH, Kim KM, Seok JY, Lee HJ, Cho DY, Han JH, Hwang CS.

Nanotechnology. 2010 Sep 24;21(38):385202. doi: 10.1088/0957-4484/21/38/385202. Epub 2010 Aug 26.

PMID:
20739739
19.

Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates.

Pertsev NA, Kohlstedt H.

Nanotechnology. 2010 Nov 26;21(47):475202. doi: 10.1088/0957-4484/21/47/475202. Epub 2010 Oct 29.

PMID:
21030777
20.

Ferroelastic switching for nanoscale non-volatile magnetoelectric devices.

Baek SH, Jang HW, Folkman CM, Li YL, Winchester B, Zhang JX, He Q, Chu YH, Nelson CT, Rzchowski MS, Pan XQ, Ramesh R, Chen LQ, Eom CB.

Nat Mater. 2010 Apr;9(4):309-14. doi: 10.1038/nmat2703. Epub 2010 Feb 28.

PMID:
20190772
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