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Results: 1 to 20 of 114

Similar articles for PubMed (Select 23421151)

1.
2.

High-efficiency, low turn-on voltage blue-violet quantum-dot-based light-emitting diodes.

Shen H, Cao W, Shewmon NT, Yang C, Li LS, Xue J.

Nano Lett. 2015 Feb 11;15(2):1211-6. doi: 10.1021/nl504328f. Epub 2015 Jan 13.

PMID:
25580801
3.

Efficient CdSe/CdS quantum dot light-emitting diodes using a thermally polymerized hole transport layer.

Zhao J, Bardecker JA, Munro AM, Liu MS, Niu Y, Ding IK, Luo J, Chen B, Jen AK, Ginger DS.

Nano Lett. 2006 Mar;6(3):463-7.

PMID:
16522043
4.

Single layer graphene electrodes for quantum dot-light emitting diodes.

Yan L, Zhang Y, Zhang X, Zhao J, Wang Y, Zhang T, Jiang Y, Gao W, Yin J, Zhao J, Yu WW.

Nanotechnology. 2015 Mar 27;26(13):135201. doi: 10.1088/0957-4484/26/13/135201. Epub 2015 Mar 9.

PMID:
25751419
5.

Highly Efficient and Low Turn-On Voltage Quantum Dot Light-Emitting Diodes by Using a Stepwise Hole-Transport Layer.

Ji W, Lv Y, Jing P, Zhang H, Wang J, Zhang H, Zhao J.

ACS Appl Mater Interfaces. 2015 Jul 29;7(29):15955-60. doi: 10.1021/acsami.5b04050. Epub 2015 Jul 15.

PMID:
26137935
6.

Efficient and bright colloidal quantum dot light-emitting diodes via controlling the shell thickness of quantum dots.

Shen H, Lin Q, Wang H, Qian L, Yang Y, Titov A, Hyvonen J, Zheng Y, Li LS.

ACS Appl Mater Interfaces. 2013 Nov 27;5(22):12011-6. doi: 10.1021/am4038068. Epub 2013 Nov 15.

PMID:
24191742
7.

Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer.

Xu W, Ji W, Jing P, Yuan X, Wang YA, Xiang W, Zhao J.

Opt Lett. 2014 Feb 1;39(3):426-9. doi: 10.1364/OL.39.000426.

PMID:
24487831
8.

All solution processed low turn-on voltage near infrared LEDs based on core-shell PbS-CdS quantum dots with inverted device structure.

Sanchez RS, Binetti E, Torre JA, Garcia-Belmonte G, Striccoli M, Mora-Sero I.

Nanoscale. 2014 Aug 7;6(15):8551-5. doi: 10.1039/c4nr01975j.

PMID:
24970552
9.

Solution-processed, high-performance light-emitting diodes based on quantum dots.

Dai X, Zhang Z, Jin Y, Niu Y, Cao H, Liang X, Chen L, Wang J, Peng X.

Nature. 2014 Nov 6;515(7525):96-9. doi: 10.1038/nature13829. Epub 2014 Oct 29.

PMID:
25363773
10.

Improved performance of nanocrystal quantum dots-based LEDs by modifying hole transport layer.

Lee J, Han CS, Jeong S, Kang BH, Hong SM, Kim DE, Kang SW.

J Nanosci Nanotechnol. 2011 Jan;11(1):432-6.

PMID:
21446470
11.

The work mechanism and sub-bandgap-voltage electroluminescence in inverted quantum dot light-emitting diodes.

Ji W, Jing P, Zhang L, Li D, Zeng Q, Qu S, Zhao J.

Sci Rep. 2014 Nov 10;4:6974. doi: 10.1038/srep06974. Erratum in: Sci Rep. 2015;5:8944.

12.

Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture.

Hu W, Henderson R, Zhang Y, You G, Wei L, Bai Y, Wang J, Xu J.

Nanotechnology. 2012 Sep 21;23(37):375202. doi: 10.1088/0957-4484/23/37/375202. Epub 2012 Aug 24.

PMID:
22922394
13.

All solution-processed stable white quantum dot light-emitting diodes with hybrid ZnO@TiO₂ as blue emitters.

Chen J, Zhao D, Li C, Xu F, Lei W, Sun L, Nathan A, Sun XW.

Sci Rep. 2014 Feb 13;4:4085. doi: 10.1038/srep04085.

14.

Highly efficient quantum-dot light-emitting diodes with DNA-CTMA as a combined hole-transporting and electron-blocking layer.

Sun Q, Subramanyam G, Dai L, Check M, Campbell A, Naik R, Grote J, Wang Y.

ACS Nano. 2009 Mar 24;3(3):737-43. doi: 10.1021/nn8009079.

PMID:
19309174
15.

Inverted CdSe/CdS/ZnS quantum dot light emitting devices with titanium dioxide as an electron-injection contact.

Ji W, Jing P, Zhao J, Liu X, Wang A, Li H.

Nanoscale. 2013 Apr 21;5(8):3474-80. doi: 10.1039/c3nr34168b. Epub 2013 Mar 11.

PMID:
23474645
16.

Quantum dot light-emitting devices with electroluminescence tunable over the entire visible spectrum.

Anikeeva PO, Halpert JE, Bawendi MG, Bulović V.

Nano Lett. 2009 Jul;9(7):2532-6. doi: 10.1021/nl9002969.

PMID:
19514711
17.

All-solution-processed, multilayered CuInS₂/ZnS colloidal quantum-dot-based electroluminescent device.

Kim JH, Yang H.

Opt Lett. 2014 Sep 1;39(17):5002-5. doi: 10.1364/OL.39.005002.

PMID:
25166059
18.

InGaN-based nano-pillar light emitting diodes fabricated by self-assembled ITO nano-dots.

Park MJ, Kwak JS.

J Nanosci Nanotechnol. 2012 May;12(5):4265-8.

PMID:
22852387
19.

Polymer and small molecule mixture for organic hole transport layers in quantum dot light-emitting diodes.

Ho MD, Kim D, Kim N, Cho SM, Chae H.

ACS Appl Mater Interfaces. 2013 Dec 11;5(23):12369-74. doi: 10.1021/am403173n. Epub 2013 Dec 2.

PMID:
24083395
20.

Selection of metal oxide charge transport layers for colloidal quantum dot LEDs.

Wood V, Panzer MJ, Halpert JE, Caruge JM, Bawendi MG, Bulović V.

ACS Nano. 2009 Nov 24;3(11):3581-6. doi: 10.1021/nn901074r.

PMID:
19886643
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