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Results: 1 to 20 of 135

1.

Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application.

Nie B, Luo LB, Chen JJ, Hu JG, Wu CY, Wang L, Yu YQ, Zhu ZF, Jie JS.

Nanotechnology. 2013 Mar 8;24(9):095603. doi: 10.1088/0957-4484/24/9/095603. Epub 2013 Feb 12.

PMID:
23403941
[PubMed]
2.

Tunable p-type conductivity and transport properties of AlN nanowires via Mg doping.

Tang YB, Bo XH, Xu J, Cao YL, Chen ZH, Song HS, Liu CP, Hung TF, Zhang WJ, Cheng HM, Bello I, Lee ST, Lee CS.

ACS Nano. 2011 May 24;5(5):3591-8. doi: 10.1021/nn200963k. Epub 2011 Apr 15.

PMID:
21480640
[PubMed - indexed for MEDLINE]
3.

Chlorine-doped n-type CdS nanowires with enhanced photoconductivity.

Wu C, Jie J, Wang L, Yu Y, Peng Q, Zhang X, Cai J, Guo H, Wu D, Jiang Y.

Nanotechnology. 2010 Dec 17;21(50):505203. doi: 10.1088/0957-4484/21/50/505203. Epub 2010 Nov 23. Erratum in: Nanotechnology. 2011 Feb 11;22(6):069801.

PMID:
21098944
[PubMed]
4.

Electrical characterization of composition modulated In(1-x)Sb(x) nanowire field effect transistors by scanning gate microscopy.

Martinez-Morales AA, Penchev M, Zhong J, Jing X, Singh KV, Yengel E, Khan MI, Ozkan CS, Ozkan M.

J Nanosci Nanotechnol. 2010 Oct;10(10):6779-82.

PMID:
21137796
[PubMed]
5.

p-Type ZnO nanowire arrays.

Yuan GD, Zhang WJ, Jie JS, Fan X, Zapien JA, Leung YH, Luo LB, Wang PF, Lee CS, Lee ST.

Nano Lett. 2008 Aug;8(8):2591-7. doi: 10.1021/nl073022t. Epub 2008 Jul 12.

PMID:
18624388
[PubMed]
6.

ZnSe nanowire/Si p-n heterojunctions: device construction and optoelectronic applications.

Zhang X, Zhang X, Wang L, Wu Y, Wang Y, Gao P, Han Y, Jie J.

Nanotechnology. 2013 Oct 4;24(39):395201. doi: 10.1088/0957-4484/24/39/395201. Epub 2013 Sep 6.

PMID:
24013310
[PubMed]
7.

One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application.

Luo LB, Wang XH, Xie C, Li ZJ, Lu R, Yang XB, Lu J.

Nanoscale Res Lett. 2014 Nov 26;9(1):637. doi: 10.1186/1556-276X-9-637. eCollection 2014.

PMID:
25489288
[PubMed]
Free PMC Article
8.

Sn-catalyzed synthesis of SnO2 nanowires and their optoelectronic characteristics.

Luo LB, Liang FX, Jie JS.

Nanotechnology. 2011 Dec 2;22(48):485701. doi: 10.1088/0957-4484/22/48/485701. Epub 2011 Nov 4.

PMID:
22056680
[PubMed]
9.

Tuning the electrical transport properties of n-type CdS nanowires via Ga doping and their nano-optoelectronic applications.

Cai J, Jie J, Jiang P, Wu D, Xie C, Wu C, Wang Z, Yu Y, Wang L, Zhang X, Peng Q, Jiang Y.

Phys Chem Chem Phys. 2011 Aug 28;13(32):14663-7. doi: 10.1039/c1cp21104h. Epub 2011 Jun 28.

PMID:
21709907
[PubMed]
10.

An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires.

Wang F, Seo JH, Bayerl D, Shi J, Mi H, Ma Z, Zhao D, Shuai Y, Zhou W, Wang X.

Nanotechnology. 2011 Jun 3;22(22):225602. doi: 10.1088/0957-4484/22/22/225602. Epub 2011 Apr 1.

PMID:
21454935
[PubMed]
11.

Piezotronic effect in solution-grown p-type ZnO nanowires and films.

Pradel KC, Wu W, Zhou Y, Wen X, Ding Y, Wang ZL.

Nano Lett. 2013 Jun 12;13(6):2647-53. doi: 10.1021/nl400792w. Epub 2013 May 3.

PMID:
23635319
[PubMed - indexed for MEDLINE]
12.

Synthesis of p-type GaN nanowires.

Kim SW, Park YH, Kim I, Park TE, Kwon BW, Choi WK, Choi HJ.

Nanoscale. 2013 Sep 21;5(18):8550-4. doi: 10.1039/c3nr01664a.

PMID:
23892611
[PubMed]
13.

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor.

Molnar W, Lugstein A, Wojcik T, Pongratz P, Auner N, Bauch C, Bertagnolli E.

Beilstein J Nanotechnol. 2012;3:564-9. Epub 2012 Jul 31.

PMID:
23019552
[PubMed]
Free PMC Article
14.

Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires.

Li PJ, Liao ZM, Zhang XZ, Zhang XJ, Zhu HC, Gao JY, Laurent K, Leprince-Wang Y, Wang N, Yu DP.

Nano Lett. 2009 Jul;9(7):2513-8. doi: 10.1021/nl803443x.

PMID:
19583279
[PubMed - indexed for MEDLINE]
15.

Field effect transistor from individual trigonal Se nanowire.

Qin D, Tao H, Zhao Y, Lan L, Chan K, Cao Y.

Nanotechnology. 2008 Sep 3;19(35):355201. doi: 10.1088/0957-4484/19/35/355201. Epub 2008 Jul 17.

PMID:
21828834
[PubMed]
16.

In-situ phosphrous doping in ZnTe nanowires with enhanced p-type conductivity.

Cao YL, Liu ZT, Chen LM, Tang YB, Luo LB, Lee ST, Lee CS.

J Nanosci Nanotechnol. 2012 Mar;12(3):2353-9.

PMID:
22755058
[PubMed]
17.

p-n hetero-junction diode arrays of p-type single walled carbon nanotubes and aligned n-type SnO₂ nanowires.

Yoon J, Min KW, Kim J, Kim GT, Ha JS.

Nanotechnology. 2012 Jul 5;23(26):265301. doi: 10.1088/0957-4484/23/26/265301. Epub 2012 Jun 15.

PMID:
22699118
[PubMed - indexed for MEDLINE]
18.

Crystalline GaSb nanowires synthesized on amorphous substrates: from the formation mechanism to p-channel transistor applications.

Yang ZX, Wang F, Han N, Lin H, Cheung HY, Fang M, Yip S, Hung T, Wong CY, Ho JC.

ACS Appl Mater Interfaces. 2013 Nov 13;5(21):10946-52. doi: 10.1021/am403161t. Epub 2013 Oct 23.

PMID:
24107082
[PubMed]
19.

Facile synthesis of highly uniform Mn/Co-codoped ZnO nanowires: optical, electrical, and magnetic properties.

Li H, Huang Y, Zhang Q, Qiao Y, Gu Y, Liu J, Zhang Y.

Nanoscale. 2011 Feb;3(2):654-60. doi: 10.1039/c0nr00644k. Epub 2010 Nov 26.

PMID:
21113544
[PubMed - indexed for MEDLINE]
20.

Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.

Hu Z, Zhang X, Xie C, Wu C, Zhang X, Bian L, Wu Y, Wang L, Zhang Y, Jie J.

Nanoscale. 2011 Nov;3(11):4798-803. doi: 10.1039/c1nr10619h. Epub 2011 Sep 26.

PMID:
21952747
[PubMed - indexed for MEDLINE]

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