Format
Items per page
Sort by

Send to:

Choose Destination

Links from PubMed

Items: 1 to 20 of 87

1.

Electrochemical synthesis of transparent, amorphous, C₆₀-rich, photoactive, and low-doped film with an interconnected structure.

Li M, Ishihara S, Ohkubo K, Liao M, Ji Q, Gu C, Pan Y, Jiang X, Akada M, Hill JP, Nakanishi T, Ma Y, Yamauchi Y, Fukuzumi S, Ariga K.

Small. 2013 Jun 24;9(12):2064-8. doi: 10.1002/smll.201202680. Epub 2013 Jan 29. No abstract available.

PMID:
23359555
2.

Optical constants of amorphous, transparent titanium-doped tungsten oxide thin films.

Ramana CV, Baghmar G, Rubio EJ, Hernandez MJ.

ACS Appl Mater Interfaces. 2013 Jun 12;5(11):4659-66. doi: 10.1021/am4006258. Epub 2013 May 17.

PMID:
23682744
3.

Optical and electrochemical properties of optically transparent, boron-doped diamond thin films deposited on quartz.

Stotter J, Zak J, Behler Z, Show Y, Swain GM.

Anal Chem. 2002 Dec 1;74(23):5924-30.

PMID:
12498185
4.

Thin transparent W-doped indium-zinc oxide (WIZO) layer on glass.

Lee YJ, Lim BW, Kim JH, Kim TW, Oh BY, Heo GS, Kim KY.

J Nanosci Nanotechnol. 2012 Jul;12(7):5604-8.

PMID:
22966618
5.

Direct electrochemistry of cytochrome c immobilized on a novel macroporous gold film coated with a self-assembled 11-mercaptoundecanoic acid monolayer.

Li Y, Li J, Xia XH, Liu SQ.

Talanta. 2010 Sep 15;82(4):1164-9. doi: 10.1016/j.talanta.2010.06.036. Epub 2010 Jul 3.

PMID:
20801313
6.

Highly active nanocrystalline TiO(2) photoelectrodes.

Paronyan TM, Kechiantz AM, Lin MC.

Nanotechnology. 2008 Mar 19;19(11):115201. doi: 10.1088/0957-4484/19/11/115201. Epub 2008 Feb 18.

PMID:
21730548
7.

[Photoluminescence from Er-doped silicon-rich silicon oxide film and Er-doped silicon-rich silicon nitride film and its annealing behavior].

Yuan FC, Ran GZ, Chen Y, Zhang BR, Qiao YP, Fu JS, Qin GG, Ma ZC, Zong WH.

Guang Pu Xue Yu Guang Pu Fen Xi. 2001 Dec;21(6):763-5. Chinese.

PMID:
12958888
8.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

Ben Slama S, Hajji M, Ezzaouia H.

Nanoscale Res Lett. 2012 Aug 17;7(1):464. doi: 10.1186/1556-276X-7-464.

9.

Integration of a carbon nanotube based electrode in silicon microtechnology to fabricate electrochemical transducers.

Luais E, Boujtita M, Gohier A, Tailleur A, Casimirius S, Djouadi MA, Granier A, Tessier PY.

Nanotechnology. 2008 Oct 29;19(43):435502. doi: 10.1088/0957-4484/19/43/435502. Epub 2008 Sep 22.

PMID:
21832696
10.

Crystallization behavior of Ge-doped eutectic Sb70Te30 films in optical disks.

Khulbe PK, Hurst T, Horie M, Mansuripur M.

Appl Opt. 2002 Oct 10;41(29):6220-9.

PMID:
12389992
11.

Heavy phosphate adsorption on amorphous ITO film electrodes: nano-barrier effect for highly selective exclusion of anionic species.

Kato D, Xu G, Iwasaki Y, Hirata Y, Kurita R, Niwa O.

Langmuir. 2007 Jul 31;23(16):8400-5. Epub 2007 Jul 7.

PMID:
17616215
12.

Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature.

Seo JS, Jeon JH, Hwang YH, Park H, Ryu M, Park SH, Bae BS.

Sci Rep. 2013;3:2085. doi: 10.1038/srep02085.

13.

Facile synthesis of highly photoactive α-Fe₂O₃-based films for water oxidation.

Wang G, Ling Y, Wheeler DA, George KE, Horsley K, Heske C, Zhang JZ, Li Y.

Nano Lett. 2011 Aug 10;11(8):3503-9. doi: 10.1021/nl202316j. Epub 2011 Jul 25.

PMID:
21766825
14.

Exploratory combustion synthesis: amorphous indium yttrium oxide for thin-film transistors.

Hennek JW, Kim MG, Kanatzidis MG, Facchetti A, Marks TJ.

J Am Chem Soc. 2012 Jun 13;134(23):9593-6. doi: 10.1021/ja303589v. Epub 2012 Jun 1.

PMID:
22625409
15.

Electrical conductivity and crystallization of amorphous bismuth ruthenate thin films deposited by spray pyrolysis.

Ryll T, Brunner A, Ellenbroek S, Bieberle-Hutter A, Rupp JL, Gauckler LJ.

Phys Chem Chem Phys. 2010 Nov 14;12(42):13933-42. doi: 10.1039/c0cp00889c. Epub 2010 Sep 17.

PMID:
20848026
16.

All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.

Liu J, Buchholz DB, Hennek JW, Chang RP, Facchetti A, Marks TJ.

J Am Chem Soc. 2010 Sep 1;132(34):11934-42. doi: 10.1021/ja9103155.

PMID:
20698566
17.

Ultraflat carbon film electrodes prepared by electron beam evaporation.

Blackstock JJ, Rostami AA, Nowak AM, McCreery RL, Freeman MR, McDermott MT.

Anal Chem. 2004 May 1;76(9):2544-52.

PMID:
15117196
18.

In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides.

Song SA, Zhang W, Sik Jeong H, Kim JG, Kim YJ.

Ultramicroscopy. 2008 Oct;108(11):1408-19. doi: 10.1016/j.ultramic.2008.05.012. Epub 2008 Jun 19.

PMID:
18657907
19.

Influences of Ti film thickness on electrochemical properties of Si/Ti/Cu film electrodes.

Cho GB, Lee SH, Sung HJ, Noh JP, Ahn HJ, Nam TH, Kim KW.

J Nanosci Nanotechnol. 2012 Jul;12(7):5962-6.

PMID:
22966689
20.

Chemical shift and surface characteristics of Al-doped ZnO thin film on SiOC dielectrics.

Oh T, Lee SY.

J Nanosci Nanotechnol. 2013 Oct;13(10):7202-4.

PMID:
24245229
Format
Items per page
Sort by

Send to:

Choose Destination

Supplemental Content

Write to the Help Desk