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Items: 1 to 20 of 174

1.

Self-assembled growth of MnSi~1.7 nanowires with a single orientation and a large aspect ratio on Si(110) surfaces.

Zou ZQ, Li WC, Liu XY, Shi GM.

Nanoscale Res Lett. 2013 Jan 22;8(1):45. doi: 10.1186/1556-276X-8-45.

2.

Formation of manganese silicide nanowires on Si(111) surfaces by the reactive epitaxy method.

Wang D, Zou ZQ.

Nanotechnology. 2009 Jul 8;20(27):275607. doi: 10.1088/0957-4484/20/27/275607. Epub 2009 Jun 17.

PMID:
19531857
3.

Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates.

Bhatta UM, Rath A, Dash JK, Ghatak J, Yi-Feng L, Liu CP, Satyam PV.

Nanotechnology. 2009 Nov 18;20(46):465601. doi: 10.1088/0957-4484/20/46/465601. Epub 2009 Oct 21.

PMID:
19843987
4.

Growth of high-density titanium silicide nanowires in a single direction on a silicon surface.

Hsu HC, Wu WW, Hsu HF, Chen LJ.

Nano Lett. 2007 Apr;7(4):885-9. Epub 2007 Mar 3.

PMID:
17335267
5.

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate.

Wierzbicka A, Zytkiewicz ZR, Kret S, Borysiuk J, Dluzewski P, Sobanska M, Klosek K, Reszka A, Tchutchulashvili G, Cabaj A, Lusakowska E.

Nanotechnology. 2013 Jan 25;24(3):035703. doi: 10.1088/0957-4484/24/3/035703. Epub 2012 Dec 21.

PMID:
23262581
6.

Detection of spin polarized carrier in silicon nanowire with single crystal MnSi as magnetic contacts.

Lin YC, Chen Y, Shailos A, Huang Y.

Nano Lett. 2010 Jun 9;10(6):2281-7. doi: 10.1021/nl101477q.

PMID:
20499889
7.

Control of growth mechanisms and orientation in epitaxial Si nanowires grown by electron beam evaporation.

Irrera A, Pecora EF, Priolo F.

Nanotechnology. 2009 Apr 1;20(13):135601. doi: 10.1088/0957-4484/20/13/135601. Epub 2009 Mar 11.

PMID:
19420504
8.
9.

STM study of electrical transport properties of one dimensional contacts between MnSi(~1.7) nanowires and Si(111) and (110) substrates.

Liu XY, Zou ZQ.

Nanotechnology. 2015 May 15;26(19):195704. doi: 10.1088/0957-4484/26/19/195704. Epub 2015 Apr 22.

PMID:
25900852
10.

Unidirectional Pt silicide nanowires grown on vicinal Si(100).

Lim DK, Bae SS, Choi J, Lee D, Sung da E, Kim S, Kim JK, Yeom HW, Lee H.

J Chem Phys. 2008 Mar 7;128(9):094701. doi: 10.1063/1.2835543.

PMID:
18331104
11.

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy.

Xu T, Sulerzycki J, Nys JP, Patriarche G, Grandidier B, Stiévenard D.

Nanoscale Res Lett. 2011 Feb 2;6(1):113. doi: 10.1186/1556-276X-6-113.

12.

Self-assembled growth and luminescence of crystalline Si/SiOx core-shell nanowires.

Kim S, Kim CO, Shin DH, Hong SH, Kim MC, Kim J, Choi SH, Kim T, Elliman RG, Kim YM.

Nanotechnology. 2010 May 21;21(20):205601. doi: 10.1088/0957-4484/21/20/205601. Epub 2010 Apr 23.

PMID:
20413841
13.

Epitaxial growth of vertically free-standing ultra-thin silicon nanowires.

Zhou Q, Liu L, Gao X, Chen L, Senz S, Zhang Z, Liu J.

Nanotechnology. 2015 Feb 20;26(7):075707. doi: 10.1088/0957-4484/26/7/075707. Epub 2015 Feb 2.

PMID:
25643177
14.

Degenerate electronic structure of reconstructed MnSi(1.7) nanowires on Si(001).

Liu HJ, Owen JH, Miki K.

J Phys Condens Matter. 2012 Mar 7;24(9):095005. doi: 10.1088/0953-8984/24/9/095005. Epub 2012 Jan 25.

PMID:
22275007
15.

Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.

Calarco R, Meijers RJ, Debnath RK, Stoica T, Sutter E, Lüth H.

Nano Lett. 2007 Aug;7(8):2248-51. Epub 2007 Jun 29.

PMID:
17602537
16.

Kinetics of Si and Ge nanowires growth through electron beam evaporation.

Artoni P, Pecora EF, Irrera A, Priolo F.

Nanoscale Res Lett. 2011 Feb 21;6(1):162. doi: 10.1186/1556-276X-6-162.

17.

Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.

Borysiuk J, Zytkiewicz ZR, Sobanska M, Wierzbicka A, Klosek K, Korona KP, Perkowska PS, Reszka A.

Nanotechnology. 2014 Apr 4;25(13):135610. doi: 10.1088/0957-4484/25/13/135610. Epub 2014 Mar 5.

PMID:
24598248
18.
19.

Orientation specific synthesis of kinked silicon nanowires grown by the vapour-liquid-solid mechanism.

Hyun YJ, Lugstein A, Steinmair M, Bertagnolli E, Pongratz P.

Nanotechnology. 2009 Mar 25;20(12):125606. doi: 10.1088/0957-4484/20/12/125606. Epub 2009 Mar 4.

PMID:
19420475
20.

Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy.

Zhuang QD, Anyebe EA, Sanchez AM, Rajpalke MK, Veal TD, Zhukov A, Robinson BJ, Anderson F, Kolosov O, Fal'ko V.

Nanoscale Res Lett. 2014 Jun 25;9(1):321. doi: 10.1186/1556-276X-9-321. eCollection 2014.

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