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Results: 1 to 20 of 121

1.

Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate.

Li T, Gao L, Lei W, Guo L, Yang T, Chen Y, Wang Z.

Nanoscale Res Lett. 2013 Jan 14;8(1):27. doi: 10.1186/1556-276X-8-27.

PMID:
23316901
[PubMed]
Free PMC Article
2.

Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates.

Li T, Chen Y, Lei W, Zhou X, Luo S, Hu Y, Wang L, Yang T, Wang Z.

Nanoscale Res Lett. 2011 Jul 21;6(1):463. doi: 10.1186/1556-276X-6-463.

PMID:
21777417
[PubMed]
Free PMC Article
3.

Growth of InAs quantum dots on GaAs nanowires by metal organic chemical vapor deposition.

Yan X, Zhang X, Ren X, Huang H, Guo J, Guo X, Liu M, Wang Q, Cai S, Huang Y.

Nano Lett. 2011 Sep 14;11(9):3941-5. doi: 10.1021/nl202190n. Epub 2011 Aug 19.

PMID:
21848312
[PubMed]
4.

Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates.

Sun MH, Leong ES, Chin AH, Ning CZ, Cirlin GE, Samsonenko YB, Dubrovskii VG, Chuang L, Chang-Hasnain C.

Nanotechnology. 2010 Aug 20;21(33):335705. doi: 10.1088/0957-4484/21/33/335705. Epub 2010 Jul 26.

PMID:
20657047
[PubMed]
5.

Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control.

Ba Hoang T, Moses AF, Ahtapodov L, Zhou H, Dheeraj DL, van Helvoort AT, Fimland BO, Weman H.

Nano Lett. 2010 Aug 11;10(8):2927-33. doi: 10.1021/nl101087e.

PMID:
20604543
[PubMed]
6.

Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy.

Zhuang QD, Anyebe EA, Sanchez AM, Rajpalke MK, Veal TD, Zhukov A, Robinson BJ, Anderson F, Kolosov O, Fal'ko V.

Nanoscale Res Lett. 2014 Jun 25;9(1):321. doi: 10.1186/1556-276X-9-321. eCollection 2014.

PMID:
25024683
[PubMed]
Free PMC Article
7.

Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection.

Wei W, Bao XY, Soci C, Ding Y, Wang ZL, Wang D.

Nano Lett. 2009 Aug;9(8):2926-34. doi: 10.1021/nl901270n.

PMID:
19624100
[PubMed]
8.

Sub-100 nm Si nanowire and nano-sheet array formation by MacEtch using a non-lithographic InAs nanowire mask.

Shin JC, Zhang C, Li X.

Nanotechnology. 2012 Aug 3;23(30):305305. doi: 10.1088/0957-4484/23/30/305305. Epub 2012 Jul 11.

PMID:
22781145
[PubMed]
9.

Control of the crystal structure of InAs nanowires by tuning contributions of adatom diffusion.

Huang H, Ren X, Ye X, Guo J, Wang Q, Zhang X, Cai S, Huang Y.

Nanotechnology. 2010 Nov 26;21(47):475602. doi: 10.1088/0957-4484/21/47/475602. Epub 2010 Oct 29.

PMID:
21030767
[PubMed]
10.

GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE.

Ikejiri K, Ishizaka F, Tomioka K, Fukui T.

Nanotechnology. 2013 Mar 22;24(11):115304. doi: 10.1088/0957-4484/24/11/115304. Epub 2013 Feb 28.

PMID:
23449458
[PubMed]
11.

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

Iqbal A, Beech JP, Anttu N, Pistol ME, Samuelson L, Borgström MT, Yartsev A.

Nanotechnology. 2013 Mar 22;24(11):115706. doi: 10.1088/0957-4484/24/11/115706. Epub 2013 Mar 1.

PMID:
23455456
[PubMed]
12.

Spatial and temporal variation of surface-enhanced Raman scattering at Ag nanowires in aqueous solution.

Clayton DA, McPherson TE, Pan S, Chen M, Dixon DA, Hu D.

Phys Chem Chem Phys. 2013 Jan 21;15(3):850-9. doi: 10.1039/c2cp43424e.

PMID:
23202361
[PubMed]
13.

Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.

Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H.

Nanotechnology. 2008 Jul 9;19(27):275605. doi: 10.1088/0957-4484/19/27/275605. Epub 2008 May 28.

PMID:
21828712
[PubMed]
14.

Tuning light absorption in core/shell silicon nanowire photovoltaic devices through morphological design.

Kim SK, Day RW, Cahoon JF, Kempa TJ, Song KD, Park HG, Lieber CM.

Nano Lett. 2012 Sep 12;12(9):4971-6. doi: 10.1021/nl302578z. Epub 2012 Aug 21.

PMID:
22889329
[PubMed - indexed for MEDLINE]
15.

Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy.

Zhang Y, Aagesen M, Holm JV, Jørgensen HI, Wu J, Liu H.

Nano Lett. 2013 Aug 14;13(8):3897-902. doi: 10.1021/nl401981u. Epub 2013 Aug 2.

PMID:
23899047
[PubMed]
16.

Optical antenna effect in semiconducting nanowires.

Chen G, Wu J, Lu Q, Gutierrez HR, Xiong Q, Pellen ME, Petko JS, Werner DH, Eklund PC.

Nano Lett. 2008 May;8(5):1341-6. doi: 10.1021/nl080007v. Epub 2008 Apr 19.

PMID:
18422362
[PubMed - indexed for MEDLINE]
17.

Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications.

Ghalamestani SG, Johansson S, Borg BM, Lind E, Dick KA, Wernersson LE.

Nanotechnology. 2012 Jan 13;23(1):015302. doi: 10.1088/0957-4484/23/1/015302. Epub 2011 Dec 8.

PMID:
22155896
[PubMed]
18.

Growth of stacking-faults-free zinc blende GaAs nanowires on Si substrate by using AlGaAs/GaAs buffer layers.

Huang H, Ren X, Ye X, Guo J, Wang Q, Yang Y, Cai S, Huang Y.

Nano Lett. 2010 Jan;10(1):64-8. doi: 10.1021/nl902842g.

PMID:
20000817
[PubMed]
19.

Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement.

Shin JC, Mohseni PK, Yu KJ, Tomasulo S, Montgomery KH, Lee ML, Rogers JA, Li X.

ACS Nano. 2012 Dec 21;6(12):11074-9. doi: 10.1021/nn304784y. Epub 2012 Nov 14.

PMID:
23128184
[PubMed]
20.

Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.

Borysiuk J, Zytkiewicz ZR, Sobanska M, Wierzbicka A, Klosek K, Korona KP, Perkowska PS, Reszka A.

Nanotechnology. 2014 Apr 4;25(13):135610. doi: 10.1088/0957-4484/25/13/135610. Epub 2014 Mar 5.

PMID:
24598248
[PubMed - in process]

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