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Items: 1 to 20 of 205

1.

Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate.

Ma YJ, Zhong Z, Yang XJ, Fan YL, Jiang ZM.

Nanotechnology. 2013 Jan 11;24(1):015304. doi: 10.1088/0957-4484/24/1/015304. Epub 2012 Dec 7.

PMID:
23220787
2.

Three-dimensional Si/Ge quantum dot crystals.

Grützmacher D, Fromherz T, Dais C, Stangl J, Müller E, Ekinci Y, Solak HH, Sigg H, Lechner RT, Wintersberger E, Birner S, Holý V, Bauer G.

Nano Lett. 2007 Oct;7(10):3150-6. Epub 2007 Sep 25.

PMID:
17892317
3.

Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates.

Brehm M, Grydlik M, Tayagaki T, Langer G, Schäffler F, Schmidt OG.

Nanotechnology. 2015 Jun 5;26(22):225202. doi: 10.1088/0957-4484/26/22/225202. Epub 2015 May 13.

PMID:
25969173
4.

Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates.

Grydlik M, Langer G, Fromherz T, Schäffler F, Brehm M.

Nanotechnology. 2013 Mar 15;24(10):105601. doi: 10.1088/0957-4484/24/10/105601. Epub 2013 Feb 15.

PMID:
23416837
5.

SiGe quantum dot crystals with periods down to 35 nm.

Dais C, Mussler G, Fromherz T, Müller E, Solak HH, Grützmacher D.

Nanotechnology. 2015 Jan 26;26(25):255302. doi: 10.1088/0957-4484/26/25/255302. Epub 2015 Jun 2.

PMID:
26031338
6.

Towards controllable growth of self-assembled SiGe single and double quantum dot nanostructures.

Ma Y, Huang S, Zeng C, Zhou T, Zhong Z, Zhou T, Fan Y, Yang X, Xia J, Jiang Z.

Nanoscale. 2014 Apr 21;6(8):3941-8. doi: 10.1039/c3nr04114j. Epub 2013 Oct 31.

PMID:
24173689
7.

Optical properties of coupled three-dimensional Ge quantum dot crystals.

Ma Y, Zhong Z, Lv Q, Qiu W, Wang X, Zhou T, Fan Y, Jiang Z.

Opt Express. 2013 Mar 11;21(5):6053-60. doi: 10.1364/OE.21.006053.

PMID:
23482173
8.

Optimal growth of Ge-rich dots on Si(001) substrates with hexagonal packed pit patterns.

Huangfu Y, Zhan W, Hong X, Fang X, Ding G, Ye H.

Nanotechnology. 2013 Jan 25;24(3):035302. doi: 10.1088/0957-4484/24/3/035302. Epub 2012 Dec 21.

PMID:
23263343
9.

Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics.

Chien CY, Chang YJ, Chang JE, Lee MS, Chen WY, Hsu TM, Li PW.

Nanotechnology. 2010 Dec 17;21(50):505201. doi: 10.1088/0957-4484/21/50/505201. Epub 2010 Nov 22.

PMID:
21098937
10.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Bollani M, Chrastina D, Fedorov A, Sordan R, Picco A, Bonera E.

Nanotechnology. 2010 Nov 26;21(47):475302. doi: 10.1088/0957-4484/21/47/475302. Epub 2010 Oct 29.

PMID:
21030775
11.
12.

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

Cui J, Lv Y, Yang XJ, Fan YL, Zhong Z, Jiang ZM.

Nanotechnology. 2011 Mar 25;22(12):125601. doi: 10.1088/0957-4484/22/12/125601. Epub 2011 Feb 14.

PMID:
21317488
13.

Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface.

Liang BL, Wong PS, Pavarelli N, Tatebayashi J, Ochalski TJ, Huyet G, Huffaker DL.

Nanotechnology. 2011 Feb 4;22(5):055706. doi: 10.1088/0957-4484/22/5/055706. Epub 2010 Dec 22.

PMID:
21178233
14.

Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates.

Hackl F, Grydlik M, Brehm M, Groiss H, Schäffler F, Fromherz T, Bauer G.

Nanotechnology. 2011 Apr 22;22(16):165302. doi: 10.1088/0957-4484/22/16/165302. Epub 2011 Mar 11.

PMID:
21393825
15.

Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

Wang C, Ke SY, Yang J, Hu WD, Qiu F, Wang RF, Yang Y.

Nanotechnology. 2015 Mar 13;26(10):105201. doi: 10.1088/0957-4484/26/10/105201. Epub 2015 Feb 20.

PMID:
25698828
16.

Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density.

Bernardi A, Ossó JO, Alonso MI, Goñi AR, Garriga M.

Nanotechnology. 2006 May 28;17(10):2602-8. doi: 10.1088/0957-4484/17/10/026. Epub 2006 Apr 28.

PMID:
21727511
17.

Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substrates.

Chen HM, Suen YW, Chen SJ, Luo GL, Lai YP, Chen ST, Lee CH, Kuan CH.

Nanotechnology. 2014 Nov 28;25(47):475301. doi: 10.1088/0957-4484/25/47/475301. Epub 2014 Nov 5.

PMID:
25369731
18.

Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates.

del Pino AP, György E, Marcus IC, Roqueta J, Alonso MI.

Nanotechnology. 2011 Jul 22;22(29):295304. doi: 10.1088/0957-4484/22/29/295304. Epub 2011 Jun 17.

PMID:
21680960
19.
20.

Thermally induced morphology evolution of pit-patterned Si substrate and its effect on nucleation properties of Ge dots.

Chen HM, Kuan CH, Suen YW, Luo GL, Lai YP, Wang FM, Chen ST.

Nanotechnology. 2012 Jan 13;23(1):015303. doi: 10.1088/0957-4484/23/1/015303. Epub 2011 Dec 8.

PMID:
22155926
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