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Similar articles for PubMed (Select 23138192)

1.

Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.

Wu D, Jiang Y, Yu Y, Zhang Y, Li G, Zhu Z, Wu C, Wang L, Luo L, Jie J.

Nanotechnology. 2012 Dec 7;23(48):485203. doi: 10.1088/0957-4484/23/48/485203. Epub 2012 Nov 9.

PMID:
23138192
2.

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

Sohn JI, Choi SS, Morris SM, Bendall JS, Coles HJ, Hong WK, Jo G, Lee T, Welland ME.

Nano Lett. 2010 Nov 10;10(11):4316-20. doi: 10.1021/nl1013713.

PMID:
20945844
3.

Vertically aligned CdSe nanowire arrays for energy harvesting and piezotronic devices.

Zhou YS, Wang K, Han W, Rai SC, Zhang Y, Ding Y, Pan C, Zhang F, Zhou W, Wang ZL.

ACS Nano. 2012 Jul 24;6(7):6478-82. doi: 10.1021/nn3022074. Epub 2012 Jul 2.

PMID:
22734964
4.

Single nanowire-based UV photodetectors for fast switching.

Ul Hasan K, Alvi NH, Lu J, Nur O, Willander M.

Nanoscale Res Lett. 2011 Apr 19;6(1):348. doi: 10.1186/1556-276X-6-348.

5.

Bipolar resistive switching of single gold-in-Ga2O3 nanowire.

Hsu CW, Chou LJ.

Nano Lett. 2012 Aug 8;12(8):4247-53. doi: 10.1021/nl301855u. Epub 2012 Jul 30.

PMID:
22823742
6.

In situ integration of squaraine-nanowire-array-based Schottky-type photodetectors with enhanced switching performance.

Zhang Y, Deng W, Zhang X, Zhang X, Zhang X, Xing Y, Jie J.

ACS Appl Mater Interfaces. 2013 Dec 11;5(23):12288-94. doi: 10.1021/am402087v. Epub 2013 Aug 9.

PMID:
23889229
7.

Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.

Cagli C, Nardi F, Harteneck B, Tan Z, Zhang Y, Ielmini D.

Small. 2011 Oct 17;7(20):2899-905. doi: 10.1002/smll.201101157. Epub 2011 Aug 23.

PMID:
21874659
8.

Robust switching characteristics of CdSe/ZnS quantum dot non-volatile memory devices.

Kannan V, Rhee JK.

Phys Chem Chem Phys. 2013 Aug 14;15(30):12762-6. doi: 10.1039/c3cp50216c.

PMID:
23801088
9.

Near-ultraviolet zinc oxide nanowire sensor using low temperature hydrothermal growth.

Swanwick ME, Pfaendler SM, Akinwande AI, Flewitt AJ.

Nanotechnology. 2012 Aug 31;23(34):344009. doi: 10.1088/0957-4484/23/34/344009. Epub 2012 Aug 10.

PMID:
22885284
10.

Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer.

Son DI, Kim JH, Park DH, Choi WK, Li F, Ham JH, Kim TW.

Nanotechnology. 2008 Feb 6;19(5):055204. doi: 10.1088/0957-4484/19/05/055204. Epub 2008 Jan 14.

PMID:
21817602
11.

CMOS compatible nanoscale nonvolatile resistance switching memory.

Jo SH, Lu W.

Nano Lett. 2008 Feb;8(2):392-7. doi: 10.1021/nl073225h. Epub 2008 Jan 25.

PMID:
18217785
12.

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires.

Herrero AM, Blanchard PT, Sanders A, Brubaker MD, Sanford NA, Roshko A, Bertness KA.

Nanotechnology. 2012 Sep 14;23(36):365203. doi: 10.1088/0957-4484/23/36/365203. Epub 2012 Aug 21.

PMID:
22910019
13.

Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications.

Van NH, Lee JH, Sohn JI, Cha S, Whang D, Kim JM, Kang DJ.

Nanotechnology. 2014 May 23;25(20):205201. doi: 10.1088/0957-4484/25/20/205201. Epub 2014 Apr 30.

PMID:
24784161
14.

Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons.

Yoon J, Hong WK, Jo M, Jo G, Choe M, Park W, Sohn JI, Nedic S, Hwang H, Welland ME, Lee T.

ACS Nano. 2011 Jan 25;5(1):558-64. doi: 10.1021/nn102633z. Epub 2010 Dec 14.

PMID:
21155534
15.

Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applications.

Guan W, Long S, Hu Y, Liu Q, Wang Q, Liu M.

J Nanosci Nanotechnol. 2009 Feb;9(2):723-6.

PMID:
19441379
16.

Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.

Hu Z, Zhang X, Xie C, Wu C, Zhang X, Bian L, Wu Y, Wang L, Zhang Y, Jie J.

Nanoscale. 2011 Nov;3(11):4798-803. doi: 10.1039/c1nr10619h. Epub 2011 Sep 26.

PMID:
21952747
17.

Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

Hu W, Qin N, Wu G, Lin Y, Li S, Bao D.

J Am Chem Soc. 2012 Sep 12;134(36):14658-61. doi: 10.1021/ja305681n. Epub 2012 Aug 29.

PMID:
22931305
18.

Experimental determination of the absorption cross-section and molar extinction coefficient of CdSe and CdTe nanowires.

Protasenko V, Bacinello D, Kuno M.

J Phys Chem B. 2006 Dec 21;110(50):25322-31.

PMID:
17165978
19.

Room-temperature compressive transfer printing of nanowires for nanoelectronic devices.

Lee WS, Choi JH, Park I, Lee J.

Langmuir. 2012 Dec 21;28(51):17851-8. doi: 10.1021/la3036133. Epub 2012 Dec 11.

PMID:
23199260
20.

A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires.

Su CJ, Su TK, Tsai TI, Lin HC, Huang TY.

Nanoscale Res Lett. 2012 Feb 29;7(1):162. doi: 10.1186/1556-276X-7-162.

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