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Results: 1 to 20 of 104

1.

Axial SiGe heteronanowire tunneling field-effect transistors.

Le ST, Jannaty P, Luo X, Zaslavsky A, Perea DE, Dayeh SA, Picraux ST.

Nano Lett. 2012 Nov 14;12(11):5850-5. doi: 10.1021/nl3032058. Epub 2012 Oct 31.

PMID:
23113718
[PubMed]
2.

A novel fabrication method for the nanoscale tunneling field effect transistor.

Kim HW, Kim JH, Kim SW, Sun MC, Kim G, Park E, Kim H, Kim KW, Park BG.

J Nanosci Nanotechnol. 2012 Jul;12(7):5592-7.

PMID:
22966616
[PubMed]
3.

Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.

Lee M, Koo J, Chung EA, Jeong DY, Koo YS, Kim S.

Nanotechnology. 2009 Nov 11;20(45):455201. doi: 10.1088/0957-4484/20/45/455201. Epub 2009 Oct 13.

PMID:
19822935
[PubMed]
4.

Analysis on RF parameters of nanoscale tunneling field-effect transistor based on InAs/InGaAs/InP heterojunctions.

Woo SY, Yoon YJ, Cho S, Lee JH, Kang IM.

J Nanosci Nanotechnol. 2013 Dec;13(12):8133-6.

PMID:
24266205
[PubMed]
5.

Ge/Si nanowire heterostructures as high-performance field-effect transistors.

Xiang J, Lu W, Hu Y, Wu Y, Yan H, Lieber CM.

Nature. 2006 May 25;441(7092):489-93.

PMID:
16724062
[PubMed - indexed for MEDLINE]
6.

The large-scale integration of high-performance silicon nanowire field effect transistors.

Li Q, Zhu X, Yang Y, Ioannou DE, Xiong HD, Kwon DW, Suehle JS, Richter CA.

Nanotechnology. 2009 Oct 14;20(41):415202. doi: 10.1088/0957-4484/20/41/415202. Epub 2009 Sep 16.

PMID:
19755723
[PubMed - indexed for MEDLINE]
7.

Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed.

Hu Y, Xiang J, Liang G, Yan H, Lieber CM.

Nano Lett. 2008 Mar;8(3):925-30. doi: 10.1021/nl073407b. Epub 2008 Feb 6.

PMID:
18251518
[PubMed - indexed for MEDLINE]
8.

Hybrid Si nanowire/amorphous silicon FETs for large-area image sensor arrays.

Wong WS, Raychaudhuri S, Lujan R, Sambandan S, Street RA.

Nano Lett. 2011 Jun 8;11(6):2214-8. doi: 10.1021/nl200114h. Epub 2011 May 17.

PMID:
21591655
[PubMed - indexed for MEDLINE]
9.

Investigation on the corner effect of L-shaped tunneling field-effect transistors and their fabrication method.

Kim SW, Choi WY, Sun MC, Park BG.

J Nanosci Nanotechnol. 2013 Sep;13(9):6376-81.

PMID:
24205665
[PubMed]
10.

Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires.

Ganjipour B, Wallentin J, Borgström MT, Samuelson L, Thelander C.

ACS Nano. 2012 Apr 24;6(4):3109-13. doi: 10.1021/nn204838m. Epub 2012 Mar 13.

PMID:
22414204
[PubMed]
11.

Observation of diameter dependent carrier distribution in nanowire-based transistors.

Schulze A, Hantschel T, Eyben P, Verhulst AS, Rooyackers R, Vandooren A, Mody J, Nazir A, Leonelli D, Vandervorst W.

Nanotechnology. 2011 May 6;22(18):185701. doi: 10.1088/0957-4484/22/18/185701. Epub 2011 Mar 17.

PMID:
21415466
[PubMed]
12.

Electrical properties of 10-nm-radius n-type gate all around twin Si nanowire field effect transistors.

Jang SH, Ryu JT, You JH, Kim TW.

J Nanosci Nanotechnol. 2012 Jul;12(7):5839-42.

PMID:
22966666
[PubMed]
13.

Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors.

Zhao Y, Candebat D, Delker C, Zi Y, Janes D, Appenzeller J, Yang C.

Nano Lett. 2012 Oct 10;12(10):5331-6. doi: 10.1021/nl302684s. Epub 2012 Sep 11.

PMID:
22950905
[PubMed]
14.

Observation of 1D behavior in Si nanowires: toward high-performance TFETs.

Salazar RB, Mehrotra SR, Klimeck G, Singh N, Appenzeller J.

Nano Lett. 2012 Nov 14;12(11):5571-5. doi: 10.1021/nl3025664. Epub 2012 Oct 8.

PMID:
23030672
[PubMed - indexed for MEDLINE]
15.

Ultrashort channel silicon nanowire transistors with nickel silicide source/drain contacts.

Tang W, Dayeh SA, Picraux ST, Huang JY, Tu KN.

Nano Lett. 2012 Aug 8;12(8):3979-85. doi: 10.1021/nl3011676. Epub 2012 Jul 13.

PMID:
22731955
[PubMed]
16.

Experimental study on the subthreshold swing of silicon nanowire transistors.

Zhang Y, Xiong Y, Yang X, Wang Y, Han W, Yang F.

J Nanosci Nanotechnol. 2010 Nov;10(11):7113-6.

PMID:
21137876
[PubMed]
17.

Computational study of tunneling transistor based on graphene nanoribbon.

Zhao P, Chauhan J, Guo J.

Nano Lett. 2009 Feb;9(2):684-8. doi: 10.1021/nl803176x.

PMID:
19199761
[PubMed]
18.

Quantum confinement induced performance enhancement in sub-5-nm lithographic Si nanowire transistors.

Trivedi K, Yuk H, Floresca HC, Kim MJ, Hu W.

Nano Lett. 2011 Apr 13;11(4):1412-7. doi: 10.1021/nl103278a. Epub 2011 Mar 4.

PMID:
21375286
[PubMed - indexed for MEDLINE]
19.

Scanning photocurrent microscopy analysis of Si nanowire field-effect transistors fabricated by surface etching of the channel.

Allen JE, Hemesath ER, Lauhon LJ.

Nano Lett. 2009 May;9(5):1903-8. doi: 10.1021/nl803924z.

PMID:
19326918
[PubMed]
20.

Electrical transport of bottom-up grown single-crystal Si(1-x)Ge(x) nanowire.

Yang WF, Lee SJ, Liang GC, Whang SJ, Kwong DL.

Nanotechnology. 2008 Jun 4;19(22):225203. doi: 10.1088/0957-4484/19/22/225203. Epub 2008 Apr 25.

PMID:
21825755
[PubMed]

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