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Items: 1 to 20 of 145

1.

State filling dependent luminescence in hybrid tunnel coupled dot-well structures.

Mazur YI, Dorogan VG, Ware ME, Marega E Jr, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ.

Nanoscale. 2012 Dec 7;4(23):7509-16. doi: 10.1039/c2nr32477f.

PMID:
23099560
2.

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure.

Zhou X, Chen Y, Xu B.

Nanoscale Res Lett. 2011 Apr 8;6(1):317. doi: 10.1186/1556-276X-6-317.

3.

Nonradiative energy transfer between colloidal quantum dot-phosphors and nanopillar nitride LEDs.

Zhang F, Liu J, You G, Zhang C, Mohney SE, Park MJ, Kwak JS, Wang Y, Koleske DD, Xu J.

Opt Express. 2012 Mar 12;20 Suppl 2:A333-9. doi: 10.1364/OE.20.00A333.

PMID:
22418683
4.

InAs/GaAsSb quantum dot solar cells.

Hatch S, Wu J, Sablon K, Lam P, Tang M, Jiang Q, Liu H.

Opt Express. 2014 May 5;22 Suppl 3:A679-85. doi: 10.1364/OE.22.00A679.

PMID:
24922376
5.

In/Ga inter-diffusion in InAs quantum dot in InGaAs/GaAs asymmetric quantum well.

Abdellatif MH, Song JD, Choi WJ, Cho NK.

J Nanosci Nanotechnol. 2012 Jul;12(7):5774-7.

PMID:
22966652
6.

Effect of growth temperature and quantum structure on InAs/GaAs quantum dot solar cell.

Park MH, Kim HS, Park SJ, Song JD, Kim SH, Lee YJ, Choi WJ, Park JH.

J Nanosci Nanotechnol. 2014 Apr;14(4):2955-9.

PMID:
24734716
7.

Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures.

Mazur YI, Dorogan VG, de Souza LD, Fan D, Benamara M, Schmidbauer M, Ware ME, Tarasov GG, Yu SQ, Marques GE, Salamo GJ.

Nanotechnology. 2014 Jan 24;25(3):035702. doi: 10.1088/0957-4484/25/3/035702. Epub 2013 Dec 17.

PMID:
24346504
8.

InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.

Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):421-6.

PMID:
12908273
9.

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer.

Liu Y, Liang B, Guo Q, Wang S, Fu G, Fu N, Wang ZM, Mazur YI, Salamo GJ.

Nanoscale Res Lett. 2015 Dec;10(1):973. doi: 10.1186/s11671-015-0973-5. Epub 2015 Jun 26.

10.

Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm.

Liu WS, Tseng HL, Kuo PC.

Opt Express. 2014 Aug 11;22(16):18860-9. doi: 10.1364/OE.22.018860.

PMID:
25320972
11.

Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface.

Liang BL, Wong PS, Pavarelli N, Tatebayashi J, Ochalski TJ, Huyet G, Huffaker DL.

Nanotechnology. 2011 Feb 4;22(5):055706. doi: 10.1088/0957-4484/22/5/055706. Epub 2010 Dec 22.

PMID:
21178233
12.

InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation.

Wong PS, Liang B, Huffaker DL.

J Nanosci Nanotechnol. 2010 Mar;10(3):1537-50.

PMID:
20355542
13.

Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealing.

Chen JF, Yu CC, Yang CH.

Nanotechnology. 2008 Dec 10;19(49):495201. doi: 10.1088/0957-4484/19/49/495201. Epub 2008 Nov 18.

PMID:
21730663
14.

Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures.

Mazur YI, Dorogan V, Marega E Jr, Cesar D, Lopez-Richard V, Marques G, Zhuchenko ZY, Tarasov G, Salamo G.

Nanoscale Res Lett. 2010 Apr 16;5(6):991-1001. doi: 10.1007/s11671-010-9590-5.

15.

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.

Tatebayashi J, Liang BL, Laghumavarapu RB, Bussian DA, Htoon H, Klimov V, Balakrishnan G, Dawson LR, Huffaker DL.

Nanotechnology. 2008 Jul 23;19(29):295704. doi: 10.1088/0957-4484/19/29/295704. Epub 2008 Jun 10.

PMID:
21730609
16.

Optical dynamics of energy-transfer from a CdZnO quantum well to a proximal Ag nanostructure.

Matsui H, Nomura W, Yatsui T, Ohtsu M, Tabata H.

Opt Lett. 2011 Oct 1;36(19):3735-7. doi: 10.1364/OL.36.003735.

PMID:
21964080
17.

Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.

Guimard D, Ishida M, Bordel D, Li L, Nishioka M, Tanaka Y, Ekawa M, Sudo H, Yamamoto T, Kondo H, Sugawara M, Arakawa Y.

Nanotechnology. 2010 Mar 12;21(10):105604. doi: 10.1088/0957-4484/21/10/105604. Epub 2010 Feb 16.

PMID:
20160334
18.

The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.

Seravalli L, Trevisi G, Frigeri P, Franchi S, Geddo M, Guizzetti G.

Nanotechnology. 2009 Jul 8;20(27):275703. doi: 10.1088/0957-4484/20/27/275703. Epub 2009 Jun 17.

PMID:
19531853
19.

Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure.

Lin A, Liang BL, Dorogan VG, Mazur YI, Tarasov GG, Salamo GJ, Huffaker DL.

Nanotechnology. 2013 Feb 22;24(7):075701. doi: 10.1088/0957-4484/24/7/075701. Epub 2013 Jan 28.

PMID:
23358560
20.

Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure.

Mazur YI, Dorogan VG, Schmidbauer M, Tarasov GG, Johnson SR, Lu X, Yu SQ, Wang ZhM, Tiedje T, Salamo GJ.

Nanotechnology. 2011 Sep 16;22(37):375703. doi: 10.1088/0957-4484/22/37/375703. Epub 2011 Aug 19.

PMID:
21852736
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