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Items: 1 to 20 of 338

1.

Enrichment of semiconducting single-walled carbon nanotubes by carbothermic reaction for use in all-nanotube field effect transistors.

Li S, Liu C, Hou PX, Sun DM, Cheng HM.

ACS Nano. 2012 Nov 27;6(11):9657-61. doi: 10.1021/nn303070p. Epub 2012 Oct 4.

PMID:
23025663
2.

Transition of single-walled carbon nanotubes from metallic to semiconducting in field-effect transistors by hydrogen plasma treatment.

Zheng G, Li Q, Jiang K, Zhang X, Chen J, Ren Z, Fan S.

Nano Lett. 2007 Jun;7(6):1622-5. Epub 2007 May 18.

PMID:
17508771
3.

Carbon nanotube multi-channeled field-effect transistors.

Chen C, Zhang Y.

J Nanosci Nanotechnol. 2006 Dec;6(12):3789-93.

PMID:
17260441
4.

Floating electrode transistor based on purified semiconducting carbon nanotubes for high source-drain voltage operation.

Lee J, Lee H, Kim T, Jin HJ, Shin J, Shin Y, Park S, Khang Y, Hong S.

Nanotechnology. 2012 Mar 2;23(8):085204. doi: 10.1088/0957-4484/23/8/085204. Epub 2012 Feb 1.

PMID:
22293578
5.

Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes: a CNT-gated CNT-FET.

Lee DS, Svensson J, Lee SW, Park YW, Campbell EE.

J Nanosci Nanotechnol. 2006 May;6(5):1325-30.

PMID:
16792360
6.

Selective synthesis and device applications of semiconducting single-walled carbon nanotubes using isopropyl alcohol as feedstock.

Che Y, Wang C, Liu J, Liu B, Lin X, Parker J, Beasley C, Wong HS, Zhou C.

ACS Nano. 2012 Aug 28;6(8):7454-62. doi: 10.1021/nn302720n. Epub 2012 Aug 9.

PMID:
22849386
7.

Wafer-scale fabrication and characterization of thin-film transistors with polythiophene-sorted semiconducting carbon nanotube networks.

Liyanage LS, Lee H, Patil N, Park S, Mitra S, Bao Z, Wong HS.

ACS Nano. 2012 Jan 24;6(1):451-8. doi: 10.1021/nn203771u. Epub 2011 Dec 21.

PMID:
22148677
8.

Formation of single-walled carbon nanotube thin films enriched with semiconducting nanotubes and their application in photoelectrochemical devices.

Wei L, Tezuka N, Umeyama T, Imahori H, Chen Y.

Nanoscale. 2011 Apr;3(4):1845-9. doi: 10.1039/c0nr00986e. Epub 2011 Mar 8.

PMID:
21384044
9.

Nanoengineering Ni(x)Fe(1-x) catalysts for gas-phase, selective synthesis of semiconducting single-walled carbon nanotubes.

Chiang WH, Sakr M, Gao XP, Sankaran RM.

ACS Nano. 2009 Dec 22;3(12):4023-32. doi: 10.1021/nn901222t.

PMID:
19954166
10.

Fabrication process of carbon nanotube field effect transistors using atomic layer deposition passivation for biosensors.

Nakashima Y, Ohno Y, Kishimoto S, Okochi M, Honda H, Mizutani T.

J Nanosci Nanotechnol. 2010 Jun;10(6):3805-9.

PMID:
20355371
11.

The performance of in situ grown Schottky-barrier single wall carbon nanotube field-effect transistors.

Zhou Z, Eres G, Jin R, Subedi A, Mandrus D, Kim EH.

Nanotechnology. 2009 Feb 25;20(8):085709. doi: 10.1088/0957-4484/20/8/085709. Epub 2009 Feb 3.

PMID:
19417470
12.

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.

Javey A, Tu R, Farmer DB, Guo J, Gordon RG, Dai H.

Nano Lett. 2005 Feb;5(2):345-8.

PMID:
15794623
13.

Thermionic field emission transport in carbon nanotube transistors.

Perello DJ, Lim SC, Chae SJ, Lee I, Kim MJ, Lee YH, Yun M.

ACS Nano. 2011 Mar 22;5(3):1756-60. doi: 10.1021/nn102343k. Epub 2011 Feb 10.

PMID:
21309557
14.

Charge noise in liquid-gated single-wall carbon nanotube transistors.

Männik J, Heller I, Janssens AM, Lemay SG, Dekker C.

Nano Lett. 2008 Feb;8(2):685-8. doi: 10.1021/nl073271h. Epub 2008 Jan 25.

PMID:
18217786
15.

Design criteria for transparent single-wall carbon nanotube thin-film transistors.

Unalan HE, Fanchini G, Kanwal A, Du Pasquier A, Chhowalla M.

Nano Lett. 2006 Apr;6(4):677-82.

PMID:
16608263
16.

Defects in individual semiconducting single wall carbon nanotubes: Raman spectroscopic and in situ Raman spectroelectrochemical study.

Kalbac M, Hsieh YP, Farhat H, Kavan L, Hofmann M, Kong J, Dresselhaus MS.

Nano Lett. 2010 Nov 10;10(11):4619-26. doi: 10.1021/nl102727f. Epub 2010 Oct 12.

PMID:
20939607
17.

Radio frequency and linearity performance of transistors using high-purity semiconducting carbon nanotubes.

Wang C, Badmaev A, Jooyaie A, Bao M, Wang KL, Galatsis K, Zhou C.

ACS Nano. 2011 May 24;5(5):4169-76. doi: 10.1021/nn200919v. Epub 2011 Apr 25.

PMID:
21517104
18.

High-quality, highly concentrated semiconducting single-wall carbon nanotubes for use in field effect transistors and biosensors.

Li WS, Hou PX, Liu C, Sun DM, Yuan J, Zhao SY, Yin LC, Cong H, Cheng HM.

ACS Nano. 2013 Aug 27;7(8):6831-9. doi: 10.1021/nn401998r. Epub 2013 Jul 24.

PMID:
23883135
19.

Wafer-scale fabrication of separated carbon nanotube thin-film transistors for display applications.

Wang C, Zhang J, Ryu K, Badmaev A, De Arco LG, Zhou C.

Nano Lett. 2009 Dec;9(12):4285-91. doi: 10.1021/nl902522f.

PMID:
19902962
20.

Charge injection in high-κ gate dielectrics of single-walled carbon nanotube thin-film transistors.

McMorrow JJ, Cress CD, Affouda CA.

ACS Nano. 2012 Jun 26;6(6):5040-50. doi: 10.1021/nn300672k. Epub 2012 May 7.

PMID:
22545966
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