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Results: 1 to 20 of 147

1.

Nanowires as semi-rigid substrates for growth of thick, In(x)Ga(1-x)N (x > 0.4) epi-layers without phase segregation for photoelectrochemical water splitting.

Pendyala C, Jasinski JB, Kim JH, Vendra VK, Lisenkov S, Menon M, Sunkara MK.

Nanoscale. 2012 Oct 21;4(20):6269-75.

PMID:
22968333
[PubMed]
2.

Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes.

Ra YH, Navamathavan R, Park JH, Lee CR.

Nano Lett. 2013 Aug 14;13(8):3506-16. doi: 10.1021/nl400906r. Epub 2013 May 28.

PMID:
23701263
[PubMed]
3.

Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

Hwang JS, Liu TY, Chattopadhyay S, Hsu GM, Basilio AM, Chen HW, Hsu YK, Tu WH, Lin YG, Chen KH, Li CC, Wang SB, Chen HY, Chen LC.

Nanotechnology. 2013 Feb 8;24(5):055401. doi: 10.1088/0957-4484/24/5/055401. Epub 2013 Jan 16.

PMID:
23324138
[PubMed]
4.

Microstructural characterization of high indium-composition InXGa₁-XN epilayers grown on c-plane sapphire substrates.

Jeong M, Lee HS, Han SK, Eun-Jung-Shin, Hong SK, Lee JY, Park YC, Yang JM, Yao T.

Microsc Microanal. 2013 Aug;19 Suppl 5:145-8. doi: 10.1017/S143192761301252X.

PMID:
23920194
[PubMed]
5.

Synthesis and Characterization of Glomerate GaN Nanowires.

Qin L, Xue C, Duan Y, Shi L.

Nanoscale Res Lett. 2009 Mar 17;4(6):584-587.

PMID:
20596317
[PubMed]
Free PMC Article
6.

The growth of ultralong and highly blue luminescent gallium oxide nanowires and nanobelts, and direct horizontal nanowire growth on substrates.

Kuo CL, Huang MH.

Nanotechnology. 2008 Apr 16;19(15):155604. doi: 10.1088/0957-4484/19/15/155604. Epub 2008 Mar 11.

PMID:
21825618
[PubMed]
7.

Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

Fernández-Garrido S, Kong X, Gotschke T, Calarco R, Geelhaar L, Trampert A, Brandt O.

Nano Lett. 2012 Dec 12;12(12):6119-25. doi: 10.1021/nl302664q. Epub 2012 Nov 9.

PMID:
23130785
[PubMed]
8.

Epitaxial growth of InGaN nanowire arrays for light emitting diodes.

Hahn C, Zhang Z, Fu A, Wu CH, Hwang YJ, Gargas DJ, Yang P.

ACS Nano. 2011 May 24;5(5):3970-6. doi: 10.1021/nn200521r. Epub 2011 Apr 25.

PMID:
21495684
[PubMed - indexed for MEDLINE]
9.

Influence of Mg doping on GaN nanowires.

Zhang D, Xue C, Zhuang H, Sun H, Cao Y, Huang Y, Wang Z, Wang Y.

Chemphyschem. 2009 Feb 23;10(3):571-5. doi: 10.1002/cphc.200800529.

PMID:
19142926
[PubMed]
10.

Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.

Albert S, Bengoechea-Encabo A, Sánchez-García MA, Kong X, Trampert A, Calleja E.

Nanotechnology. 2013 May 3;24(17):175303. doi: 10.1088/0957-4484/24/17/175303. Epub 2013 Apr 4.

PMID:
23558410
[PubMed]
11.

Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates.

Yang Y, Ling Y, Wang G, Lu X, Tong Y, Li Y.

Nanoscale. 2013 Mar 7;5(5):1820-4. doi: 10.1039/c3nr34200j. Epub 2013 Feb 4.

PMID:
23376979
[PubMed]
12.

Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires.

Kong X, Albert S, Bengoechea-Encabo A, Sanchez-Garcia MA, Calleja E, Trampert A.

Nanotechnology. 2012 Dec 7;23(48):485701. doi: 10.1088/0957-4484/23/48/485701. Epub 2012 Nov 2.

PMID:
23123435
[PubMed]
13.

Morphology and composition controlled Ga(x)In(1-x)Sb nanowires: understanding ternary antimonide growth.

Ghalamestani SG, Ek M, Ghasemi M, Caroff P, Johansson J, Dick KA.

Nanoscale. 2014 Jan 21;6(2):1086-92. doi: 10.1039/c3nr05079c.

PMID:
24296789
[PubMed]
14.

High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode.

AlOtaibi B, Harati M, Fan S, Zhao S, Nguyen HP, Kibria MG, Mi Z.

Nanotechnology. 2013 May 3;24(17):175401. doi: 10.1088/0957-4484/24/17/175401. Epub 2013 Apr 3.

PMID:
23548782
[PubMed]
15.

Nitrogen-doped ZnO nanowire arrays for photoelectrochemical water splitting.

Yang X, Wolcott A, Wang G, Sobo A, Fitzmorris RC, Qian F, Zhang JZ, Li Y.

Nano Lett. 2009 Jun;9(6):2331-6. doi: 10.1021/nl900772q.

PMID:
19449878
[PubMed - indexed for MEDLINE]
16.

Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires.

Knelangen M, Hanke M, Luna E, Schrottke L, Brandt O, Trampert A.

Nanotechnology. 2011 Sep 7;22(36):365703. doi: 10.1088/0957-4484/22/36/365703. Epub 2011 Aug 11. Erratum in: Nanotechnology. 2011 Nov 18;22(46):469501.

PMID:
21836335
[PubMed]
17.

Coaxial group III-nitride nanowire photovoltaics.

Dong Y, Tian B, Kempa TJ, Lieber CM.

Nano Lett. 2009 May;9(5):2183-7. doi: 10.1021/nl900858v.

PMID:
19435385
[PubMed]
18.

Growth mechanism of GaN nanowires: preferred nucleation site and effect of hydrogen.

Lim SK, Crawford S, Gradecak S.

Nanotechnology. 2010 Aug 27;21(34):345604. doi: 10.1088/0957-4484/21/34/345604. Epub 2010 Aug 4.

PMID:
20683137
[PubMed]
19.

Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.

Borysiuk J, Zytkiewicz ZR, Sobanska M, Wierzbicka A, Klosek K, Korona KP, Perkowska PS, Reszka A.

Nanotechnology. 2014 Apr 4;25(13):135610. doi: 10.1088/0957-4484/25/13/135610. Epub 2014 Mar 5.

PMID:
24598248
[PubMed - in process]
20.

Mechanical elasticity of vapour-liquid-solid grown GaN nanowires.

Chen Y, Stevenson I, Pouy R, Wang L, McIlroy DN, Pounds T, Grant Norton M, Eric Aston D.

Nanotechnology. 2007 Apr 4;18(13):135708. doi: 10.1088/0957-4484/18/13/135708. Epub 2007 Feb 28.

PMID:
21730393
[PubMed]

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