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Results: 1 to 20 of 182

1.

Improved performance of ZnO-based resistive memory by internal diffusion of Ag atoms.

Peng CN, Wang CW, Huang JS, Chang WY, Wu WW, Chueh YL.

J Nanosci Nanotechnol. 2012 Aug;12(8):6271-5.

PMID:
22962735
[PubMed]
2.

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation.

Peng CN, Wang CW, Chan TC, Chang WY, Wang YC, Tsai HW, Wu WW, Chen LJ, Chueh YL.

Nanoscale Res Lett. 2012 Oct 8;7(1):559. doi: 10.1186/1556-276X-7-559.

PMID:
23043767
[PubMed]
Free PMC Article
3.

Formation and rupture of Ag conductive bridge in ZrO2-based resistive switching memory.

Lin CC, Chang YP.

J Nanosci Nanotechnol. 2012 Mar;12(3):2437-41.

PMID:
22755070
[PubMed]
4.

Rectifying switching characteristics of Pt/ZnO/Pt structure based resistive memory.

Wang J, Song Z, Xu K, Liu M.

J Nanosci Nanotechnol. 2010 Nov;10(11):7088-91.

PMID:
21137871
[PubMed]
5.

Bipolar resistance switching characteristics in TiN/ZnO:Mn/Pt junctions developed for nonvolatile resistive memory application.

Yang YC, Fan B, Zeng F, Pan F.

J Nanosci Nanotechnol. 2010 Nov;10(11):7370-3.

PMID:
21137937
[PubMed]
6.

Dynamic evolution of conducting nanofilament in resistive switching memories.

Chen JY, Hsin CL, Huang CW, Chiu CH, Huang YT, Lin SJ, Wu WW, Chen LJ.

Nano Lett. 2013 Aug 14;13(8):3671-7. doi: 10.1021/nl4015638. Epub 2013 Jul 19.

PMID:
23855543
[PubMed]
7.

Effect of non-lattice oxygen on ZrO2-based resistive switching memory.

Lin CC, Chang YP, Lin HB, Lin CH.

Nanoscale Res Lett. 2012 Mar 14;7(1):187. doi: 10.1186/1556-276X-7-187.

PMID:
22416817
[PubMed]
Free PMC Article
8.

Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate.

Huang CH, Huang JS, Lai CC, Huang HW, Lin SJ, Chueh YL.

ACS Appl Mater Interfaces. 2013 Jul 10;5(13):6017-23. doi: 10.1021/am4007287. Epub 2013 Jun 26.

PMID:
23705848
[PubMed]
9.

Forming and switching mechanisms of a cation-migration-based oxide resistive memory.

Tsuruoka T, Terabe K, Hasegawa T, Aono M.

Nanotechnology. 2010 Oct 22;21(42):425205. doi: 10.1088/0957-4484/21/42/425205. Epub 2010 Sep 24.

PMID:
20864781
[PubMed]
10.

Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters.

Wang ZQ, Xu HY, Zhang L, Li XH, Ma JG, Zhang XT, Liu YC.

Nanoscale. 2013 May 21;5(10):4490-4. doi: 10.1039/c3nr33692a.

PMID:
23584667
[PubMed]
11.

Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches.

Li M, Zhuge F, Zhu X, Yin K, Wang J, Liu Y, He C, Chen B, Li RW.

Nanotechnology. 2010 Oct 22;21(42):425202. doi: 10.1088/0957-4484/21/42/425202. Epub 2010 Sep 22.

PMID:
20858929
[PubMed]
12.

Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio.

Huang HW, Kang CF, Lai FI, He JH, Lin SJ, Chueh YL.

Nanoscale Res Lett. 2013 Nov 16;8(1):483. doi: 10.1186/1556-276X-8-483.

PMID:
24237683
[PubMed]
Free PMC Article
13.

Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO₂/Pt cell.

Yoon KJ, Lee MH, Kim GH, Song SJ, Seok JY, Han S, Yoon JH, Kim KM, Hwang CS.

Nanotechnology. 2012 May 11;23(18):185202. doi: 10.1088/0957-4484/23/18/185202. Epub 2012 Apr 20.

PMID:
22516621
[PubMed]
14.

Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration.

Prakash A, Maikap S, Rahaman SZ, Majumdar S, Manna S, Ray SK.

Nanoscale Res Lett. 2013 May 8;8(1):220. doi: 10.1186/1556-276X-8-220.

PMID:
23657016
[PubMed]
Free PMC Article
15.

Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices.

Yao IC, Lee DY, Tseng TY, Lin P.

Nanotechnology. 2012 Apr 13;23(14):145201. doi: 10.1088/0957-4484/23/14/145201. Epub 2012 Mar 21.

PMID:
22433578
[PubMed]
16.

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots.

Banerjee W, Maikap S, Lai CS, Chen YY, Tien TC, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ, Yang JR.

Nanoscale Res Lett. 2012 Mar 22;7(1):194. doi: 10.1186/1556-276X-7-194.

PMID:
22439604
[PubMed]
Free PMC Article
17.

The role of zinc vacancies in bipolar resistance switching of Ag/ZnO/Pt memory structures.

Yalishev VSh, Yuldashev SU, Kim YS, Park BH.

Nanotechnology. 2012 Sep 21;23(37):375201. doi: 10.1088/0957-4484/23/37/375201. Epub 2012 Aug 24.

PMID:
22922356
[PubMed]
18.

Schottky barrier mediated single-polarity resistive switching in Pt layer-included TiO(x) memory device.

Chung YL, Lai PY, Chen YC, Chen JS.

ACS Appl Mater Interfaces. 2011 Jun;3(6):1918-24. doi: 10.1021/am200106z. Epub 2011 May 26.

PMID:
21574659
[PubMed - indexed for MEDLINE]
19.

Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode.

Liu Q, Long S, Lv H, Wang W, Niu J, Huo Z, Chen J, Liu M.

ACS Nano. 2010 Oct 26;4(10):6162-8. doi: 10.1021/nn1017582.

PMID:
20853865
[PubMed - indexed for MEDLINE]
20.

Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer.

Wang SY, Lee DY, Huang TY, Wu JW, Tseng TY.

Nanotechnology. 2010 Dec 10;21(49):495201. doi: 10.1088/0957-4484/21/49/495201. Epub 2010 Nov 11.

PMID:
21071817
[PubMed]

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