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Items: 1 to 20 of 151

1.

Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

Chen ZB, Lei W, Chen B, Wang YB, Liao XZ, Tan HH, Zou J, Ringer SP, Jagadish C.

Nanoscale Res Lett. 2012 Aug 31;7(1):486. doi: 10.1186/1556-276X-7-486.

2.

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots.

Dai L, Bremner SP, Tan S, Wang S, Zhang G, Liu Z.

Nanoscale Res Lett. 2014 May 30;9(1):278. doi: 10.1186/1556-276X-9-278. eCollection 2014.

3.

Atomic structure of misfit dislocations at InAs/GaAs(110).

Choudhury R, Bowler DR, Gillan MJ.

J Phys Condens Matter. 2008 Jun 11;20(23):235227. doi: 10.1088/0953-8984/20/23/235227. Epub 2008 May 9.

PMID:
21694318
4.

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates.

Bietti S, Esposito L, Fedorov A, Ballabio A, Martinelli A, Sanguinetti S.

Nanoscale Res Lett. 2015 Dec;10(1):930. doi: 10.1186/s11671-015-0930-3. Epub 2015 Jun 2.

5.

High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer.

Wang Y, Zou J, Zhao ZM, Hao Z, Wang KL.

Nanotechnology. 2009 Jul 29;20(30):305301. doi: 10.1088/0957-4484/20/30/305301. Epub 2009 Jul 7.

PMID:
19581699
6.

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations.

Jallipalli A, Balakrishnan G, Huang Sh, Rotter T, Nunna K, Liang B, Dawson L, Huffaker D.

Nanoscale Res Lett. 2009 Aug 30;4(12):1458-62. doi: 10.1007/s11671-009-9420-9.

7.

Self-assembled growth of GaAs anti quantum dots in InAs matrix by migration enhanced molecular beam epitaxy.

Lee EH, Song JD, Kim SY, Han IK, Chang SK, Lee JI.

J Nanosci Nanotechnol. 2012 Feb;12(2):1480-2.

PMID:
22629983
8.

Nucleation sequence of InAs quantum dots on cross-hatch patterns.

Kanjanachuchai S, Limwongse T.

J Nanosci Nanotechnol. 2011 Dec;11(12):10787-91.

PMID:
22408996
9.

Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.

Rieger T, Luysberg M, Schäpers T, Grützmacher D, Lepsa MI.

Nano Lett. 2012 Nov 14;12(11):5559-64. doi: 10.1021/nl302502b. Epub 2012 Oct 12.

PMID:
23030380
10.

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

He J, Yadavalli K, Zhao Z, Li N, Hao Z, Wang KL, Jacob AP.

Nanotechnology. 2008 Nov 12;19(45):455607. doi: 10.1088/0957-4484/19/45/455607. Epub 2008 Oct 9.

PMID:
21832784
11.

Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface.

Wang Y, Ruterana P, Chen J, Kret S, El Kazzi S, Genevois C, Desplanque L, Wallart X.

ACS Appl Mater Interfaces. 2013 Oct 9;5(19):9760-4. doi: 10.1021/am4028907. Epub 2013 Sep 25.

PMID:
24024581
12.

Comparative study on InAs/InGaAs dots-in-a-well structure grown on GaAs(311) B and (100) substrates.

Wang L, Li M, Xiong M, Wang W, Gao H, Zhao L.

J Nanosci Nanotechnol. 2010 Nov;10(11):7359-61.

PMID:
21137934
13.

Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111).

Biermanns A, Breuer S, Trampert A, Davydok A, Geelhaar L, Pietsch U.

Nanotechnology. 2012 Aug 3;23(30):305703. doi: 10.1088/0957-4484/23/30/305703. Epub 2012 Jul 2.

PMID:
22751267
14.

Growth mode and defect evaluation of GaSb on GaAs substrate: a transmission electron microscopy study.

Huang S, Balakrishnan G, Huffaker DL.

J Nanosci Nanotechnol. 2011 Jun;11(6):5108-13.

PMID:
21770151
15.

Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.

Skiba-Szymanska J, Jamil A, Farrer I, Ward MB, Nicoll CA, Ellis DJ, Griffiths JP, Anderson D, Jones GA, Ritchie DA, Shields AJ.

Nanotechnology. 2011 Feb 11;22(6):065302. doi: 10.1088/0957-4484/22/6/065302. Epub 2011 Jan 7.

PMID:
21212488
16.

Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics.

Wen L, Gao F, Zhang S, Li G.

Small. 2016 Aug;12(31):4277-85. doi: 10.1002/smll.201503387. Epub 2016 Jun 27.

PMID:
27348495
17.

InAs quantum dot clusters grown on GaAs droplet templates: surface morphologies and optical properties.

Liang BL, Dorogan VG, Mazur YI, Strom NW, Lee JH, Sablon KA, Wang ZhM, Salamo GJ.

J Nanosci Nanotechnol. 2009 May;9(5):3320-4.

PMID:
19453010
18.

Influence of electron irradiation on the electronic transport mechanisms during the conductive AFM imaging of InAs/GaAs quantum dots capped with a thin GaAs layer.

Troyon M, Smaali K.

Nanotechnology. 2008 Jun 25;19(25):255709. doi: 10.1088/0957-4484/19/25/255709. Epub 2008 May 15.

PMID:
21828669
19.

InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm.

Strauss M, Höfling S, Forchel A.

Nanotechnology. 2009 Dec 16;20(50):505601. doi: 10.1088/0957-4484/20/50/505601. Epub 2009 Nov 12.

PMID:
19907066
20.

Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer.

Chakrabarti S, Halder N, Sengupta S, Ghosh S, Mishima TD, Stanley CR.

Nanotechnology. 2008 Dec 17;19(50):505704. doi: 10.1088/0957-4484/19/50/505704. Epub 2008 Nov 25.

PMID:
19942781
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