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Items: 1 to 20 of 223

1.

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

Zaumseil P, Kozlowski G, Schubert MA, Yamamoto Y, Bauer J, Schülli TU, Tillack B, Schroeder T.

Nanotechnology. 2012 Sep 7;23(35):355706. doi: 10.1088/0957-4484/23/35/355706. Epub 2012 Aug 15.

PMID:
22894894
2.

Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth.

Zaumseil P, Yamamoto Y, Schubert MA, Capellini G, Skibitzki O, Zoellner MH, Schroeder T.

Nanotechnology. 2015 Sep 4;26(35):355707. doi: 10.1088/0957-4484/26/35/355707. Epub 2015 Aug 12.

PMID:
26267559
3.

X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates.

Zaumseil P, Kozlowski G, Yamamoto Y, Schubert MA, Schroeder T.

J Appl Crystallogr. 2013 Aug 1;46(Pt 4):868-873. Epub 2013 Jun 7.

4.

Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars.

Kozlowski G, Zaumseil P, Schubert MA, Yamamoto Y, Bauer J, Schülli TU, Tillack B, Schroeder T.

Nanotechnology. 2012 Mar 23;23(11):115704. doi: 10.1088/0957-4484/23/11/115704. Epub 2012 Feb 28.

PMID:
22369884
5.

Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.

Chen Y, Li C, Lai H, Chen S.

Nanotechnology. 2010 Mar 19;21(11):115207. doi: 10.1088/0957-4484/21/11/115207. Epub 2010 Feb 24.

PMID:
20179329
6.

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction.

Richard MI, Zoellner MH, Chahine GA, Zaumseil P, Capellini G, Häberlen M, Storck P, Schülli TU, Schroeder T.

ACS Appl Mater Interfaces. 2015 Dec 9;7(48):26696-700. doi: 10.1021/acsami.5b08645. Epub 2015 Nov 30.

PMID:
26541318
7.

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

Ke SY, Yang J, Qiu F, Wang ZQ, Wang C, Yang Y.

Nanotechnology. 2015 Nov 6;26(44):445602. doi: 10.1088/0957-4484/26/44/445602. Epub 2015 Oct 12.

PMID:
26457572
8.

Strain engineered SiGe multiple-quantum-well nanomembranes for far-infrared intersubband device applications.

Sookchoo P, Sudradjat FF, Kiefer AM, Durmaz H, Paiella R, Lagally MG.

ACS Nano. 2013 Mar 26;7(3):2326-34. doi: 10.1021/nn305528t. Epub 2013 Feb 18.

PMID:
23402572
9.

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers.

Jung JH, Yoon HS, Kim YL, Song MS, Kim Y, Chen ZG, Zou J, Choi DY, Kang JH, Joyce HJ, Gao Q, Hoe Tan H, Jagadish C.

Nanotechnology. 2010 Jul 23;21(29):295602. doi: 10.1088/0957-4484/21/29/295602. Epub 2010 Jun 29.

PMID:
20585174
10.

Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering.

Paskiewicz DM, Tanto B, Savage DE, Lagally MG.

ACS Nano. 2011 Jul 26;5(7):5814-22. doi: 10.1021/nn201547k. Epub 2011 Jun 16.

PMID:
21650206
11.

Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth.

Kim Y, Yokoyama M, Taoka N, Takenaka M, Takagi S.

Opt Express. 2013 Aug 26;21(17):19615-23. doi: 10.1364/OE.21.019615.

PMID:
24105508
12.

Heteroepitaxy of Ge on Si(001) with pits and windows transferred from free-standing porous alumina mask.

Huangfu Y, Zhan W, Hong X, Fang X, Ding G, Ye H.

Nanotechnology. 2013 May 10;24(18):185302. doi: 10.1088/0957-4484/24/18/185302. Epub 2013 Apr 11.

PMID:
23579337
13.

Observation of free surface-induced bending upon nanopatterning of ultrathin strained silicon layer.

Moutanabbir O, Reiche M, Zakharov N, Naumann F, Petzold M.

Nanotechnology. 2011 Jan 28;22(4):045701. doi: 10.1088/0957-4484/22/4/045701. Epub 2010 Dec 15.

PMID:
21157010
14.

Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands.

Huang L, Liu F, Lu GH, Gong XG.

Phys Rev Lett. 2006 Jan 13;96(1):016103. Epub 2006 Jan 3.

PMID:
16486480
15.

Ordered Arrays of SiGe Islands from Low-Energy PECVD.

Bollani M, Bonera E, Chrastina D, Fedorov A, Montuori V, Picco A, Tagliaferri A, Vanacore G, Sordan R.

Nanoscale Res Lett. 2010 Sep 7;5(12):1917-1920.

16.

Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space.

Hrauda N, Zhang JJ, Süess MJ, Wintersberger E, Holý V, Stangl J, Deiter C, Seeck OH, Bauer G.

Nanotechnology. 2012 Nov 23;23(46):465705. doi: 10.1088/0957-4484/23/46/465705. Epub 2012 Oct 23.

PMID:
23092941
17.

Influence of the Si cap layer on the SiGe islands morphology.

Zak M, Laval JY, Dłuzewski PA, Kret S, Yam V, Bouchier D, Fossard F.

Micron. 2009 Jan;40(1):122-5. doi: 10.1016/j.micron.2008.02.010. Epub 2008 Feb 23.

PMID:
18395456
18.

Electronic and structural characteristics of Zr-incorporated Gd2O3 films on strained SiGe substrates.

Baeck JH, Park SA, Lee WJ, Jeong IS, Jeong K, Cho MH, Kim YK, Min BG, Ko DH.

J Chem Phys. 2009 May 28;130(20):204510. doi: 10.1063/1.3140203.

PMID:
19485460
19.

Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

Medvid A, Onufrijevs P, Jarimaviciute-Gudaitiene R, Dauksta E, Prosycevas I.

Nanoscale Res Lett. 2013 Jun 4;8(1):264. doi: 10.1186/1556-276X-8-264.

20.

Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate.

Ma YJ, Zhong Z, Yang XJ, Fan YL, Jiang ZM.

Nanotechnology. 2013 Jan 11;24(1):015304. doi: 10.1088/0957-4484/24/1/015304. Epub 2012 Dec 7.

PMID:
23220787
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