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Results: 1 to 20 of 99

Similar articles for PubMed (Select 22709630)

1.

The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing.

Lee MH, Chen PG.

Nanoscale Res Lett. 2012 Jun 18;7(1):307. doi: 10.1186/1556-276X-7-307.

2.

Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates.

del Pino AP, György E, Marcus IC, Roqueta J, Alonso MI.

Nanotechnology. 2011 Jul 22;22(29):295304. doi: 10.1088/0957-4484/22/29/295304. Epub 2011 Jun 17.

PMID:
21680960
3.

Photoluminescence efficiency and size distribution of self assembled ge dots on porous TiO2.

Rowell NL, Lockwood DJ, Amiard G, Favre L, Ronda A, Berbezier I, Faustini M, Grosso D.

J Nanosci Nanotechnol. 2011 Oct;11(10):9190-5.

PMID:
22400322
4.

Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density.

Bernardi A, Ossó JO, Alonso MI, Goñi AR, Garriga M.

Nanotechnology. 2006 May 28;17(10):2602-8. doi: 10.1088/0957-4484/17/10/026. Epub 2006 Apr 28.

PMID:
21727511
5.

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

Zaumseil P, Kozlowski G, Schubert MA, Yamamoto Y, Bauer J, Schülli TU, Tillack B, Schroeder T.

Nanotechnology. 2012 Sep 7;23(35):355706. doi: 10.1088/0957-4484/23/35/355706. Epub 2012 Aug 15.

PMID:
22894894
6.

Strong photoluminescence enhancement from colloidal quantum dot near silver nano-island films.

Langhuth H, Frédérick S, Kaniber M, Finley JJ, Rührmair U.

J Fluoresc. 2011 Mar;21(2):539-43. doi: 10.1007/s10895-010-0740-z. Epub 2010 Oct 9.

PMID:
20936331
7.

The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100).

Hakkarainen TV, Polojärvi V, Schramm A, Tommila J, Guina M.

Nanotechnology. 2012 Mar 23;23(11):115702. doi: 10.1088/0957-4484/23/11/115702. Epub 2012 Feb 28.

PMID:
22369789
8.

The influence of deposition temperature on the correlation of Ge quantum dot positions in amorphous silica matrix.

Buljan M, Desnica UV, Drazić G, Ivanda M, Radić N, Dubcek P, Salamon K, Bernstorff S, Holý V.

Nanotechnology. 2009 Feb 25;20(8):085612. doi: 10.1088/0957-4484/20/8/085612. Epub 2009 Feb 3.

PMID:
19417460
9.

Heteroepitaxy of Ge on Si(001) with pits and windows transferred from free-standing porous alumina mask.

Huangfu Y, Zhan W, Hong X, Fang X, Ding G, Ye H.

Nanotechnology. 2013 May 10;24(18):185302. doi: 10.1088/0957-4484/24/18/185302. Epub 2013 Apr 11.

PMID:
23579337
10.

Nano-cones formation on a surface of Ge, Si crystals and Si1-xGe(x) solid solution by laser radiation.

Medvid A, Onufrijevs P, Lyutovich K, Oehme M, Kasper E.

J Nanosci Nanotechnol. 2011 Oct;11(10):9088-94.

PMID:
22400307
11.

Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics.

Chien CY, Chang YJ, Chang JE, Lee MS, Chen WY, Hsu TM, Li PW.

Nanotechnology. 2010 Dec 17;21(50):505201. doi: 10.1088/0957-4484/21/50/505201. Epub 2010 Nov 22.

PMID:
21098937
12.

Site-selective assembly of quantum dots on patterned self-assembled monolayers fabricated by laser direct-writing.

Wu C, Wang Y, Han X, Hu X, Cheng Q, Han B, Liu Q, Ren T, He Y, Sun S, Ma H.

Nanotechnology. 2012 Jun 15;23(23):235302. doi: 10.1088/0957-4484/23/23/235302. Epub 2012 May 17.

PMID:
22595703
13.

Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates.

Nakamura Y, Murayama A, Watanabe R, Iyoda T, Ichikawa M.

Nanotechnology. 2010 Mar 5;21(9):095305. doi: 10.1088/0957-4484/21/9/095305. Epub 2010 Feb 4.

PMID:
20130347
14.

Molecular ground hole state of vertically coupled GeSi/Si self-assembled quantum dots.

Yakimov AI, Mikhalyov GY, Dvurechenskii AV.

Nanotechnology. 2008 Feb 6;19(5):055202. doi: 10.1088/0957-4484/19/05/055202. Epub 2008 Jan 14.

PMID:
21817600
15.

Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM.

Gangopadhyay S, Yoshimura M, Ueda K.

Nanotechnology. 2009 Nov 25;20(47):475401. doi: 10.1088/0957-4484/20/47/475401. Epub 2009 Oct 29.

PMID:
19875880
16.

Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.

Nassiopoulou AG, Olzierski A, Tsoi E, Berbezier I, Karmous A.

J Nanosci Nanotechnol. 2007 Jan;7(1):316-21.

PMID:
17455497
17.

Spatially confined synthesis of SiOx nano-rod with size-controlled Si quantum dots in nano-porous anodic aluminum oxide membrane.

Pai YH, Lin GR.

Opt Express. 2011 Jan 17;19(2):896-905. doi: 10.1364/OE.19.000896.

PMID:
21263629
18.

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

Cui J, Lv Y, Yang XJ, Fan YL, Zhong Z, Jiang ZM.

Nanotechnology. 2011 Mar 25;22(12):125601. doi: 10.1088/0957-4484/22/12/125601. Epub 2011 Feb 14.

PMID:
21317488
19.
20.

Modeling of self-assembled GeSi nano-dots and corresponding admittance spectroscopy.

Li X, Xu W, Cao S, Cai Q, Lu F.

J Nanosci Nanotechnol. 2010 Aug;10(8):5495-9.

PMID:
21125926
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