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Results: 1 to 20 of 102

Similar articles for PubMed (Select 22583747)

1.

Polarized recombination of acoustically transported carriers in GaAs nanowires.

Möller M, Hernández-Mínguez A, Breuer S, Pfüller C, Brandt O, de Lima MM Jr, Cantarero A, Geelhaar L, Riechert H, Santos PV.

Nanoscale Res Lett. 2012 May 14;7(1):247. doi: 10.1186/1556-276X-7-247.

2.

Remarkable and Crystal-Structure-Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires.

Li X, Wei X, Xu T, Pan D, Zhao J, Chen Q.

Adv Mater. 2015 May;27(18):2852-8. doi: 10.1002/adma.201500037. Epub 2015 Mar 27.

PMID:
25820939
3.

Confinement in thickness-controlled GaAs polytype nanodots.

Vainorius N, Lehmann S, Jacobsson D, Samuelson L, Dick KA, Pistol ME.

Nano Lett. 2015 Apr 8;15(4):2652-6. doi: 10.1021/acs.nanolett.5b00253. Epub 2015 Mar 30.

PMID:
25761051
4.

Linearly polarized emission from an embedded quantum dot using nanowire morphology control.

Foster AP, Bradley JP, Gardner K, Krysa AB, Royall B, Skolnick MS, Wilson LR.

Nano Lett. 2015 Mar 11;15(3):1559-63. doi: 10.1021/nl503933n. Epub 2015 Feb 16.

5.

Second-harmonic generation imaging of semiconductor nanowires with focused vector beams.

Bautista G, Mäkitalo J, Chen Y, Dhaka V, Grasso M, Karvonen L, Jiang H, Huttunen MJ, Huhtio T, Lipsanen H, Kauranen M.

Nano Lett. 2015 Mar 11;15(3):1564-9. doi: 10.1021/nl503984b. Epub 2015 Feb 6.

PMID:
25651302
6.

Polarized light absorption in wurtzite InP nanowire ensembles.

De Luca M, Zilli A, Fonseka HA, Mokkapati S, Miriametro A, Tan HH, Smith LM, Jagadish C, Capizzi M, Polimeni A.

Nano Lett. 2015 Feb 11;15(2):998-1005. doi: 10.1021/nl5038374. Epub 2015 Jan 16.

PMID:
25574578
7.

Polarization response of nanowires à la carte.

Casadei A, Llado EA, Amaduzzi F, Russo-Averchi E, Rüffer D, Heiss M, Dal Negro L, Fontcuberta i Morral A.

Sci Rep. 2015 Jan 7;5:7651. doi: 10.1038/srep07651.

8.

Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction.

Köhl M, Schroth P, Minkevich AA, Hornung JW, Dimakis E, Somaschini C, Geelhaar L, Aschenbrenner T, Lazarev S, Grigoriev D, Pietsch U, Baumbach T.

J Synchrotron Radiat. 2015 Jan;22(Pt 1):67-75. doi: 10.1107/S1600577514023480. Epub 2015 Jan 1.

PMID:
25537590
9.

Origin of strong photoluminescence polarization in GaNP nanowires.

Filippov S, Sukrittanon S, Kuang Y, Tu C, Persson PO, Chen WM, Buyanova IA.

Nano Lett. 2014 Sep 10;14(9):5264-9. doi: 10.1021/nl502281p. Epub 2014 Aug 29.

PMID:
25162940
10.

Crystal structure tuning in GaAs nanowires using HCl.

Jacobsson D, Lehmann S, Dick KA.

Nanoscale. 2014 Jul 21;6(14):8257-64. doi: 10.1039/c4nr00991f.

PMID:
24931099
11.

High-frequency acoustic charge transport in GaAs nanowires.

Büyükköse S, Hernández-Mínguez A, Vratzov B, Somaschini C, Geelhaar L, Riechert H, van der Wiel WG, Santos PV.

Nanotechnology. 2014 Apr 4;25(13):135204. doi: 10.1088/0957-4484/25/13/135204. Epub 2014 Mar 4.

PMID:
24595075
12.

Morphing surfaces enable acoustophoretic contactless transport of ultrahigh-density matter in air.

Foresti D, Sambatakakis G, Bottan S, Poulikakos D.

Sci Rep. 2013 Nov 11;3:3176. doi: 10.1038/srep03176.

13.

Three-dimensional magneto-photoluminescence as a probe of the electronic properties of crystal-phase quantum disks in GaAs nanowires.

Corfdir P, Van Hattem B, Uccelli E, Conesa-Boj S, Lefebvre P, Fontcuberta i Morral A, Phillips RT.

Nano Lett. 2013 Nov 13;13(11):5303-10. doi: 10.1021/nl4028186. Epub 2013 Oct 24.

PMID:
24134509
14.

Circular dichroism and superdiffusive transport at the surface of BiTeI.

Mauchain J, Ohtsubo Y, Hajlaoui M, Papalazarou E, Marsi M, Taleb-Ibrahimi A, Faure J, Kokh KA, Tereshchenko OE, Eremeev SV, Chulkov EV, Perfetti L.

Phys Rev Lett. 2013 Sep 20;111(12):126603. Epub 2013 Sep 19. Erratum in: Phys Rev Lett. 2014 Jan 17;112(2):029901.

PMID:
24093286
15.

Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces.

Hjort M, Lehmann S, Knutsson J, Timm R, Jacobsson D, Lundgren E, Dick KA, Mikkelsen A.

Nano Lett. 2013 Sep 11;13(9):4492-8. doi: 10.1021/nl402424x. Epub 2013 Aug 15.

PMID:
23941328
16.

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

Iqbal A, Beech JP, Anttu N, Pistol ME, Samuelson L, Borgström MT, Yartsev A.

Nanotechnology. 2013 Mar 22;24(11):115706. doi: 10.1088/0957-4484/24/11/115706. Epub 2013 Mar 1.

PMID:
23455456
17.

Surface acoustic wave mediated carrier injection into individual quantum post nano emitters.

Völk S, Knall F, Schülein FJ, Truong TA, Kim H, Petroff PM, Wixforth A, Krenner HJ.

Nanotechnology. 2012 Jul 20;23(28):285201. doi: 10.1088/0957-4484/23/28/285201. Epub 2012 Jun 25.

PMID:
22728309
18.

Controllable p-n switching behaviors of GaAs nanowires via an interface effect.

Han N, Wang F, Hou JJ, Xiu F, Yip S, Hui AT, Hung T, Ho JC.

ACS Nano. 2012 May 22;6(5):4428-33. doi: 10.1021/nn3011416. Epub 2012 Apr 27.

PMID:
22519669
19.

Time-resolved photoinduced thermoelectric and transport currents in GaAs nanowires.

Prechtel L, Padilla M, Erhard N, Karl H, Abstreiter G, Fontcuberta I Morral A, Holleitner AW.

Nano Lett. 2012 May 9;12(5):2337-41. doi: 10.1021/nl300262j. Epub 2012 Apr 17.

PMID:
22494021
20.

High quality GaAs nanowires grown on glass substrates.

Dhaka V, Haggren T, Jussila H, Jiang H, Kauppinen E, Huhtio T, Sopanen M, Lipsanen H.

Nano Lett. 2012 Apr 11;12(4):1912-8. doi: 10.1021/nl204314z. Epub 2012 Mar 27.

PMID:
22432446
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