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Results: 1 to 20 of 203

1.

Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography.

Byeon KJ, Cho JY, Kim J, Park H, Lee H.

Opt Express. 2012 May 7;20(10):11423-32. doi: 10.1364/OE.20.011423.

PMID:
22565762
[PubMed]
2.

Insertion of two-dimensional photonic crystal pattern on p-GaN layer of GaN-based light-emitting diodes using bi-layer nanoimprint lithography.

Byeon KJ, Hwang SY, Hong CH, Baek JH, Lee H.

J Nanosci Nanotechnol. 2008 Oct;8(10):5242-6.

PMID:
19198430
[PubMed]
3.

Improvement of photon extraction efficiency of GaN-based LED using micro and nano complex polymer structures.

Cho JY, Byeon KJ, Park H, Kim J, Kim HS, Lee H.

Nanoscale Res Lett. 2011 Oct 31;6(1):578. doi: 10.1186/1556-276X-6-578.

PMID:
22040200
[PubMed]
Free PMC Article
4.

Fabrication of three-dimensional autocloned photonic crystal on sapphire substrate.

Ku HM, Huang CY, Chao S.

Appl Opt. 2011 Mar 20;50(9):C1-4. doi: 10.1364/AO.50.0000C1.

PMID:
21460920
[PubMed]
5.

Forming the graded-refractive-index antireflection layers on light-emitting diodes to enhance the light extraction.

Cho JY, Byeon KJ, Lee H.

Opt Lett. 2011 Aug 15;36(16):3203-5. doi: 10.1364/OL.36.003203.

PMID:
21847208
[PubMed]
6.

Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes.

Cho HK, Jang J, Choi JH, Choi J, Kim J, Lee JS, Lee B, Choe YH, Lee KD, Kim SH, Lee K, Kim SK, Lee YH.

Opt Express. 2006 Sep 18;14(19):8654-60.

PMID:
19529246
[PubMed]
7.

High efficiency GaN-based light emitting diode with nano-patterned ZnO surface fabricated by wet process.

Oh S, Lee SN, Cho S, Kim KK.

J Nanosci Nanotechnol. 2012 Jul;12(7):5582-6.

PMID:
22966614
[PubMed]
8.

The fabrication of a patterned ZnO nanorod array for high brightness LEDs.

Park H, Byeon KJ, Yang KY, Cho JY, Lee H.

Nanotechnology. 2010 Sep 3;21(35):355304. doi: 10.1088/0957-4484/21/35/355304. Epub 2010 Aug 6.

PMID:
20689168
[PubMed]
9.

Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays.

Jeong H, Park DJ, Lee HS, Ko YH, Yu JS, Choi SB, Lee DS, Suh EK, Jeong MS.

Nanoscale. 2014 Apr 21;6(8):4371-8. doi: 10.1039/c3nr06584g.

PMID:
24626720
[PubMed - in process]
10.

Photonic crystal light-emitting diodes fabricated by microsphere lithography.

Ng WN, Leung CH, Lai PT, Choi HW.

Nanotechnology. 2008 Jun 25;19(25):255302. doi: 10.1088/0957-4484/19/25/255302. Epub 2008 May 14.

PMID:
21828649
[PubMed]
11.

Fabrication of 380 nm ultra violet light emitting diodes on nano-patterned n-type GaN substrate.

Baek KS, Sadasivam KG, Lee YG, Song YH, Jeong T, Kim SH, Kim JK, Kim SH, Jeon SR, Lee JK.

J Nanosci Nanotechnol. 2011 Aug;11(8):7495-8.

PMID:
22103228
[PubMed]
12.

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Yang YC, Sheu JK, Lee ML, Yen CH, Lai WC, Hon SJ, Ko TK.

Opt Express. 2012 Nov 5;20 Suppl 6:A1019-25. doi: 10.1364/OE.20.0A1019.

PMID:
23187653
[PubMed]
13.

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.

Fu X, Zhang B, Kang X, Deng J, Xiong C, Dai T, Jiang X, Yu T, Chen Z, Zhang GY.

Opt Express. 2011 Sep 12;19 Suppl 5:A1104-8. doi: 10.1364/OE.19.0A1104.

PMID:
21935252
[PubMed]
14.

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Yang YC, Sheu JK, Lee ML, Yen CH, Lai WC, Hon SJ, Ko TK.

Opt Express. 2012 Nov 5;20(23):A1019-25.

PMID:
23326851
[PubMed]
15.

InGaN-based light-emitting diodes with an embedded conical air-voids structure.

Huang YC, Lin CF, Chen SH, Dai JJ, Wang GM, Huang KP, Chen KT, Hsu YH.

Opt Express. 2011 Jan 3;19 Suppl 1:A57-63. doi: 10.1364/OE.19.000A57.

PMID:
21263713
[PubMed]
16.

Enhancement of orange-yellow electroluminescence extraction from SiNx light-emitting devices by silver nanostructures.

Wang F, Li D, Yang D, Que D.

Opt Express. 2013 Jan 14;21(1):846-54. doi: 10.1364/OE.21.000846.

PMID:
23388978
[PubMed]
17.

InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film.

Sheu JK, Chang KH, Tu SJ, Lee ML, Yang CC, Hsu CK, Lai WC.

Opt Express. 2010 Nov 8;18 Suppl 4:A562-7. doi: 10.1364/OE.18.00A562.

PMID:
21165089
[PubMed]
18.

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

Guo H, Zhang X, Chen H, Zhang P, Liu H, Chang H, Zhao W, Liao Q, Cui Y.

Opt Express. 2013 Sep 9;21(18):21456-65. doi: 10.1364/OE.21.021456.

PMID:
24104020
[PubMed]
19.

Fabrication of imprint stamp by using nanosphere lithography and its utilization to photoluminescence enhancement.

Kim TS, Kim SM, Song SS, Kim EU, Lee K, Kim KS, Jung GY.

J Nanosci Nanotechnol. 2008 Oct;8(10):5275-8.

PMID:
19198437
[PubMed]
20.

Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography.

Huang HW, Lin CH, Yu CC, Lee BD, Chiu CH, Lai CF, Kuo HC, Leung KM, Lu TC, Wang SC.

Nanotechnology. 2008 May 7;19(18):185301. doi: 10.1088/0957-4484/19/18/185301. Epub 2008 Apr 1.

PMID:
21825687
[PubMed]

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